BLF4G20-110B,112 - NXP Semiconductors

1. Product proﬁle

1.1 General description

110 W LDMOS power transistor for base station applications at frequencies from

1800 MHz to 2000 MHz.

[1] ACPR400 at 30 kHz resolution bandwidth.

[2] ACPR600 at 30 kHz resolution bandwidth.

1.2 Features

■Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a

supply voltage of 28 V and an IDq of 650 mA:

◆Load power = 48 W (AV)

◆Gain = 13.8 dB (typ)

◆Efﬁciency = 38.5 % (typ)

◆ACPR400 =−61 dBc (typ)

◆ACPR600 =−74 dBc (typ)

◆EVMrms = 2.1 % (typ)

■Easy power control

■Excellent ruggedness

■High efﬁciency

■Excellent thermal stability

■Designed for broadband operation (1800 MHz to 2000 MHz)

BLF4G20-110B;

BLF4G20S-110B

UHF power LDMOS transistor

Rev. 01 — 23 January 2006 Product data sheet

Table 1: Typical performance

f = 1930 MHz to 1990 MHz; T

case

=25

C; in a class-AB production test circuit.

Mode of operation VDS

(V) PL

(W) Gp

(dB)

(typ)

ηD

(%)

(typ)

ACPR400

(dBc)

(typ)

ACPR600

(dBc)

(typ)

EVMrms

(%)

(typ)

CW 28 100 13.4 49 - - -

GSM EDGE 28 48 (AV) 13.8 38.5 −61[1] −74[2] 2.1

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Product data sheet Rev. 01 — 23 January 2006 2 of 14

Philips Semiconductors BLF4G20-110B; BLF4G20S-110B

UHF power LDMOS transistor

■Internally matched for ease of use

1.3 Applications

■RF power ampliﬁers for GSM, GSM EDGE and CDMA base stations and multicarrier

applications in the 1800 MHz to 2000 MHz frequency range.

2. Pinning information

[1] Connected to ﬂange

3. Ordering information

Table 2: Pinning

Pin Description Simpliﬁed outline Symbol

BLF4G20-110B (SOT502A)

1 drain

2 gate

3 source [1]

BLF4G20S-110B (SOT502B)

1 drain

2 gate

3 source [1]

sym039

Table 3: Ordering information

Type number Package

Name Description Version

BLF4G20-110B - ﬂanged LDMOST ceramic package; 2 mounting

holes; 2 leads SOT502A

BLF4G20S-110B - earless ﬂanged LDMOST ceramic package; 2 leads SOT502B

Product data sheet Rev. 01 — 23 January 2006 3 of 14

Philips Semiconductors BLF4G20-110B; BLF4G20S-110B

UHF power LDMOS transistor

4. Limiting values

5. Thermal characteristics

6. Characteristics

Table 4: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Min Max Unit

VDS drain-source voltage - 65 V

VGS gate-source voltage −0.5 +15 V

IDdrain current - 12 A

Tstg storage temperature −65 +150 °C

Tjjunction temperature - 200 °C

Table 5: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-case) thermal resistance from

junction to case Tcase =80°C

PL= 40 W - 0.76 0.85 K/W

PL= 100 W - 0.65 0.74 K/W

Table 6: Characteristics

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown

voltage VGS =0V; I

D= 0.9 mA 65 - - V

VGS(th) gate-source threshold

voltage VDS = 10 V; ID= 180 mA 2.5 3.1 3.5 V

VGSq gate-source quiescent

voltage VDS = 28 V; ID= 900 mA 2.7 3.2 3.7 V

IDSS drain leakage current VGS =0V; V

DS =28V - - 3 µA

IDSX drain cut-off current VGS =V

GS(th) + 6 V; VDS = 10 V 27 30 - A

IGSS gate leakage current VGS =15V; V

DS = 0 V - - 300 nA

gfs transfer conductance VDS =10V; I

D= 10 A - 9.0 - S

RDS(on) drain-source on-state

resistance VGS =V

GS(th) + 6 V; ID=6A - 90 - mΩ

Crs feedback capacitance VGS =0V; V

DS = 28 V; f = 1 MHz - 2.5 - pF

Product data sheet Rev. 01 — 23 January 2006 4 of 14

Philips Semiconductors BLF4G20-110B; BLF4G20S-110B

UHF power LDMOS transistor

7. Application information

7.1 Ruggedness in class-AB operation

The BLF4G20(S)-110B is capable of withstanding a load mismatch corresponding to

VSWR = 10 : 1 through all phases under the following conditions: VDS =28V;

IDq = 650 mA; PL= 110 W (CW); f = 1990 MHz.

Table 7: Application information

Mode of operation: Two-tone (200 kHz tone spacing); f = 1930 MHz and 1990 MHz.

=28V; I

= 700 mA; T

case

=25

C; unless otherwise speciﬁed; in a class-AB production test

circuit.

Symbol Parameter Conditions Min Typ Max Unit

Gppower gain PL(AV) = 100 W 12 13.5 - dB

IRL input return loss PL(AV) = 100 W - −10 −6.5 dB

ηDdrain efﬁciency PL(AV) = 100 W 36 38.5 - %

IMD3 third order intermodulation

distortion PL(AV) = 100 W - −29 −26 dBc

IMD5 ﬁfth order intermodulation

distortion PL(AV) = 100 W - −39.5 −36.5 dBc

IMD7 seventhorder intermodulation

distortion PL(AV) = 100 W - −53.5 −50.5 dBc

Product data sheet Rev. 01 — 23 January 2006 5 of 14

Philips Semiconductors BLF4G20-110B; BLF4G20S-110B

UHF power LDMOS transistor

VDS = 28 V; IDq = 650 mA; Tcase =25°C;

f = 1990 MHz VDS =28V; I

Dq = 650 mA; Tcase =25°C;

f = 1990 MHz

Fig 1. One-tone CW power gain and drain efﬁciency

as functions of load power; typical values Fig 2. Two-tone CW power gain and drain efﬁciency

as functions of average load power; typical

values

VDS = 28 V; IDq = 650 mA; Tcase =25°C;

f = 1990 MHz VDS =28V; T

case =25°C; f = 1990 MHz

(1) IDq = 550 mA

(2) IDq = 650 mA

(3) IDq = 750 mA

(4) IDq = 850 mA

Fig 3. Intermodulation distortion as a function of

average load power; typical values Fig 4. Third order intermodulation distortion as a

function of average load power; typical values

PL (W)

0 16012040 80

001aac387

11 20

(dB)

GpηD

(%)

ηD

PL(AV) (W)

0 1008040 6020

001aac388

(dB)

ηD

(%)

PL(AV) (W)

0 1008040 6020

001aac389

−40

−60

−20

IMD

(dBc)

IMD3

IMD5

IMD7

−80

PL(AV) (W)

0 1008040 6020

001aac390

-40

-60

-20

IMD3

(dBc)

-80

Product data sheet Rev. 01 — 23 January 2006 6 of 14

Philips Semiconductors BLF4G20-110B; BLF4G20S-110B

UHF power LDMOS transistor

VDS = 28 V; IDq = 650 mA; Tcase =25°C;

f = 1990 MHz VDS =28V; I

Dq = 650 mA; Tcase =25°C;

f = 1990 MHz

Fig 5. GSM EDGE power gain and drain efﬁciency as

functions of average load power; typical values Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as

functions of average load power; typical values

VDS = 28 V; IDq = 650 mA; Tcase =25°C;

f = 1990 MHz VDS =28V; I

Dq = 650 mA; Tcase =25°C;

f = 1990 MHz

Fig 7. GSM EDGE rms EVM and peak EVM as

functions of average load power; typical values Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as

functions of drain efﬁciency; typical values

PL(AV) (W)

0806020 40

001aac391

5015

(dB) ηD

(%)

ηD

0PL(AV) (W)

0806020 40

001aac392

−70

−80

−60

−50

ACPR

(dBc)

−90

ACPR400

ACPR600

PL(AV) (W)

0806020 40

001aac393

EVM

(%)

EVMM

EVMrms

ηD (%)

0504020 3010

001aac394

−64

−68 1

−60

−56

ACPR

(dBc) EVM

(%)

−72 0

ACPR 400

EVMrms

Product data sheet Rev. 01 — 23 January 2006 7 of 14

Philips Semiconductors BLF4G20-110B; BLF4G20S-110B

UHF power LDMOS transistor

8. Test information

See Table 8 for list of components.

Fig 9. Test circuit for operation at 1990 MHz

Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (εr = 3.5),

thickness = 0.76 mm.

See Table 8 for list of components.

Fig 10. Component layout for 1990 MHz test circuit

001aad664

output

50 Ω

input

50 Ω

C5 C7

C11

C2 C6

C3 C4 C8 C9 C10

VDD

+ VG

001aac586

R1 C4

12.0 mm

BLF4G20 − 110B Input −PCS− Rev 2 BLF4G20 − 110B Output −PCS− Rev 2

C11

VDD

W1 C10

12.5 mm 17.6 mm

15.2 mm

Product data sheet Rev. 01 — 23 January 2006 8 of 14

Philips Semiconductors BLF4G20-110B; BLF4G20S-110B

UHF power LDMOS transistor

[1] American Technical Ceramics type 100B or capacitor of same quality.

Table 8: List of components (see Figure 9 and 10).

Component Description Value Dimensions Catalogue number

C1 multilayer ceramic chip

capacitor [1] 0.1 pF

C2, C4, C8 multilayer ceramic chip

capacitor [1] 11 pF

C3, C10 multilayer ceramic chip

capacitor 10 µF

C5 multilayer ceramic chip

capacitor [1] 0.5 pF

C6 multilayer ceramic chip

capacitor [1] 8.2 pF

C7 multilayer ceramic chip

capacitor [1] 0.2 pF

C9 multilayer ceramic chip

capacitor [1] 1µF 1812X7R105KL2AB

C11 Philips electrolytic

capacitor 220 µF; 35 V

R1 Philips chip resistor 5.6 Ω0603

W1 hand made wire 5 mm

Product data sheet Rev. 01 — 23 January 2006 9 of 14

Philips Semiconductors BLF4G20-110B; BLF4G20S-110B

UHF power LDMOS transistor

9. Package outline

Fig 11. Package outline SOT502A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT502A 99-12-28

03-01-10

0 5 10 mm

scale

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A

M M

UNIT A

12.83

12.57 0.15

0.08 20.02

19.61 9.53

9.25 19.94

18.92 9.91

9.65

4.72

3.43

cU2

0.25 0.5127.94

1.14

0.89

34.16

33.91

5.33

4.32

3.38

3.12

1.70

1.45

9.50

9.30

inches 0.505

0.495 0.006

0.003 0.788

0.772

19.96

19.66

0.786

0.774 0.375

0.364 0.785

0.745 0.390

0.380

0.186

0.135 0.01 0.021.100

0.045

0.035 1.345

1.335

0.210

0.170 0.133

0.123 0.067

0.057

0.374

0.366

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

w1AB

M M M

Product data sheet Rev. 01 — 23 January 2006 10 of 14

Philips Semiconductors BLF4G20-110B; BLF4G20S-110B

UHF power LDMOS transistor

Fig 12. Package outline SOT502B

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT502B 99-12-28

03-01-10

0 5 10 mm

scale

Earless flanged LDMOST ceramic package; 2 leads SOT502B

M M

UNIT A

12.83

12.57 0.15

0.08 20.02

19.61 9.53

9.25 19.94

18.92 9.91

9.65

4.72

3.43

cU2

0.25

1.14

0.89

20.70

20.45

5.33

4.32

1.70

1.45

9.50

9.30

inches 0.505

0.495 0.006

0.003 0.788

0.772

19.96

19.66

0.786

0.774 0.375

0.364 0.785

0.745 0.390

0.380

0.186

0.135 0.010

0.045

0.035 0.815

0.805

0.210

0.170 0.067

0.057

0.374

0.366

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Product data sheet Rev. 01 — 23 January 2006 11 of 14

Philips Semiconductors BLF4G20-110B; BLF4G20S-110B

UHF power LDMOS transistor

10. Abbreviations

Table 9: List of abbreviations

Abbreviation Description

ACPR Adjacent Channel Power Ratio

CDMA Code Division Multiple Access

CW Continuous Wave

EDGE Enhanced Data rates for GSM Evolution

EVM Error Vector Magnitude

GSM Global System for Mobile communications

IDq quiescent drain current

LDMOS Laterally Diffused Metal Oxide Semiconductor

PEP Peak Envelope Power

RF Radio Frequency

VSWR Voltage Standing Wave Ratio

Philips Semiconductors BLF4G20-110B; BLF4G20S-110B

UHF power LDMOS transistor

Product data sheet Rev. 01 — 23 January 2006 12 of 14

11. Revision history

Table 10: Revision history

Document ID Release

date Data sheet status Change

notice Doc. number Supersedes

BLF4G20-110B_4G20S-110B_1 20060123 Product data sheet - 6397 750 14611 -

Philips Semiconductors BLF4G20-110B; BLF4G20S-110B

UHF power LDMOS transistor

Product data sheet Rev. 01 — 23 January 2006 13 of 14

12. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

13. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

makes no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

14. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

15. Trademarks

Notice — All referenced brands, product names, service names and

trademarks are the property of their respective owners.

16. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Level Data sheet status[1] Product status[2] [3] Deﬁnition

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights.Date of release: 23 January 2006

Document number: 9397 750 14611

Published in The Netherlands

Philips Semiconductors BLF4G20-110B; BLF4G20S-110B

UHF power LDMOS transistor

17. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 4

7.1 Ruggedness in class-AB operation. . . . . . . . . . 4

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

12 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 13

13 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

16 Contact information . . . . . . . . . . . . . . . . . . . . 13