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Page <1> V1.025/02/13
Silicon Epitaxial
Planar Diode
Features:
• Fast Switching Speed : trr = 4ns (Typ)
• Surface Mount Package Ideally Suited for
Automatic Insertion
• For General Purpose Switching Applications
• High Conductance
• Available in Lead Free Version
Applications:
Surface mount fast switching diode
Max. Rating @ Ta = 25°C unless otherwise specied
Parameter Symbol Limits Unit
Non-Repetitive peak reverse voltage Vrm 100 V
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC reverse voltage
Vrrm
Vrms
Vr
75 V
RMS reverse voltage Vr(rms)53 V
Average rectied output current Io150 mA
Non-Repetitive peak forward surge current @t = 1μs
@t = 1s Ifsm 2
1A
Power dissipation Pd200 mW
Thermal resistance, junction to ambient air Rθja 625 °C/W
Operating and storage temperature range Tj, Tstg -65 to +150 °C
Electrical Characteristics @ Ta = 25°C unless otherwise specied
Parameter Symbol Conditions Min. Max. Unit
Reverse breakdown voltage V(br)rIr = 1μA 75 - V
Forward voltage Vf
If = 1mA
If = 10mA
If = 50mA
If = 150mA
-
0.715
0.855
1
1.25
V
Reverse current IrVr = 75V
Vr = 20V -1
25
μA
nA
Capacitance between terminals CtVr = 1V, f = 1MHz - 2 pF
Junction capacitance CjIf = Ir = 10mA,
Irr = 0.1 × Ir, Rl = 100Ω - 4 ns