VSMY2940RGX01, VSMY2940GX01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 08-Nov-17 2Document Number: 84583
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Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1A
Power dissipation PV170 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature According to Fig. 10, J-STD-020 Tsd 260 °C
Thermal resistance junction-to-ambient J-STD-051, soldered on PCB RthJA 250 K/W
0
20
40
60
80
100
120
140
160
180
0 20406080100
PV-Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
RthJA = 250 K/W
0
20
40
60
80
100
0 20406080100
IF- Forward Current (mA)
Tamb - Ambient Temperature (°C)
RthJA = 250 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF-1.41.8V
IF = 1 A, tp = 100 μs VF-2.5-V
Temperature coefficient of VFIF = 100 mA TKVF --0.7-mV/K
Reverse current IRNot designed for reverse operation μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 mW/cm2CJ-55-pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie75 145 215 mW/sr
IF = 1 A, tp = 100 μs Ie-1000-mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe-55-mW
Temperature coefficient of radiant power IF = 100 mA TKφe- -0.2 - %/K
Angle of half intensity ϕ-± 10-deg
Peak wavelength IF = 100 mA λp920 940 960 nm
Spectral bandwidth IF = 100 mA Δλ -50-nm
Temperature coefficient of λpIF = 100 mA TKλp-0.25-nm/K
Rise time IF = 100 mA, 10 % to 90 % tr-10-ns
Fall time IF = 100 mA, 10 % to 90 % tf-10-ns