fy, SGS-THOMSON Vf. parable X04xxxE/F SENSITIVE GATE SCR FEATURES uw IT(RMS) = 4A a VprM = 200V to 800V a Low lat <200nA a > K ZF K g222 DESCRIPTION G The X04xxxE/F series of SCRs uses a high performance TOP GLASS PNPN technology. TO202-1 TO202-2 These parts are intended for general purpose (Plastic) (Plastic) applications where low gate sensitivity is required. X04xxxE X04xxxF ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit Iams) | RMS on-state current X04xxxE/F | Te= 90C 4 A (180 conduction angle) X04XxxF Ta= 25C 1.35 IT(AV) Mean on-state current XO04xxxE/F | To= 90C 2.5 A (180 conduction angle) X04xxxF Ta= 25C 0.9 Itsm Non repetitive surge peak on-state current | tp =8.3ms 33 A (Tj initial = 25C ) tp = 10 ms 30 Pt Ft Value for fusing tp = 10 ms 45 As di/dt Critical rate of rise of on-state current 50 A/lus Ilg=10mA dig /dt = 0.1 A/us. Tsig Storage and operating junction temperature range - 40, +150 C Tj - 40, +125 TI Maximum lead temperature for soldering during 10s at 260 C 4.5mm from case Voltage Symbol Parameter Unit B D M N VpRM Repetitive peak off-state voltage 200 | 400 | 600 | 800 Vv Vrrm Tj =125C Rex = 1KQ January 1995 1/6 m7929237 0077131 55TX04xxxE/F THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) | Junction to ambient X04xxxE 80 C/W X04xxxF 100 Rth(j-c) | Junction to case for DC 7.5 C/W GATE CHARACTERISTICS (maximum values) Pa ay=0.2W Pem=3W(tp=20us) Iam = 1.2 A(tp = 20 us) ELECTRICAL CHARACTERISTICS Sensitivity Symbol Test Conditions Unit 02 03 05 lat Vo=12V (DC) AL=1402 Tj= 25C | MIN 20 | 20 | pA MAX | 200 | 200 50 Vet | Vp=12V (DC) Ri=1400 Tj= 25C | MAX 0.8 Vap Vo=Vprm Ri=3.3kQ Tj= 125C | MIN 0.1 Rek = 1 KQ VRGM Ina =10uA Tj= 25C | MIN 8 V tod Vp=Vprm = lrm= 3 x Hav) Tj= 25C | MAX 2 Us dic/dt=0.1A/us Ia=10mA lH r= 50mA Rex = 1 KO Tj= 25C | MAX 5 mA I la=1mA Rex = 1 KO Tj= 25C | MAX 6 mA Vim | w= 8A tp=380us Tj= 25C | MAX 1.8 V IDRM Vo = Vorm Rek = 1 KQ Tj= 25C | MAX 5 IRRM Vr = VaARM " Tj= 110C | MAX 200 dV/dt | Vp=67%Vprm Rex =1KQ Tj=110C | MIN 10 | Vius TYP 15 20 15 tq m= 3x Ityav) Va=35V Tj= 110C | MAX 50 us di/dt=10Ais tp=100us dV/dt=2VAis Vp= 67%VpbrM Rex =1 KQ ORDERING INFORMATION SCR TOP GLASS Jt | PACKAGES: E=TO202-1 F=TO202-2 CURRENT SENSITIVITY VOLTAGE 2/6 iar SGS-THOMSON YF, incromicrasucs mg 79e937 OOP7l3e 75bFig.1 : Maximum average power dissipation ver- sus average on-state current (TO202-1). X04xxxE/F Fig.2 : Correlation between maximum average power dissipation and maximum allowable tem- perature (Tamb and Tcase) for different thermal resistances heatsink + contact (TO202-1). P(W) P (W) Tease (C) 5 T T 5 5 185 60 th = OC/W 5C/w Lt \ | 4 nen a Wl DC ~ N \ 7 Aseciw |-95 3 f / | 3 N\ \ N = 180] N N CY = 180 IQ +105 2 aQ- 120 2 mS OY = 90 1 OQ - 60 Q- 30 o | Tay . A de \ 0 0.5 1 1.5 2 2.5 3 3.5 4 Fig.3 : Maximum average power dissipation ver- sus average on-state current (TO202-2). Tamb (C) 0 t L125 6 20 40 60 80 100 120 140 Fig.4 : Correlation between maximum average power dissipation and maximum allowable tem- perature (Tamb and Tcase) (TO202-2). P (W) P (W) Tease (C) 5 T T 5 +85 | gi. \ 4 Ir 4@ oc 4 \ +95 y | Ath-c) \ 3 x C - 180 3 \ OG 105 = 120 2 fr QY= 90 2 1 OL = 50 1 Rth(|-a) \ 1115 XN Pee Ol = 30 re! \ | avy) Tamb (C) | 0 0 1 L125 0 0.5 1 1.5 2 2.5 3 3.5 4 Fig.5 : Average on-state current versus case tem- perature (TO202-1). ItcavylA) 25 2 4 i \ Of- 180 \ 05 Tease (C) 0, 10 20 30 40 50 60 70 80 90 100 110 120 130 A51, Reponacrsonecs 0 20 40 60 80 100 120 140 Fig.6 : Average on-state current versus case tem- perature (TO202-2). Itavy(A) 0.8 s NJ IN 0.6 = 180 0.4 SA 0.2 _ Tamb ("C) NN % 10 20 30 40 50 60 70 80 90 100 110 120 130 3/6 M@ 75929237 0077133 bee mmX04xxxE/F Fig.7 : Relative variation of thermal impedance versus pulse duration (TO202-1). Z2th/Rth 1.00 Zth(j-c) 2th(j-a) 0.10 t 0.01 pie) 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5&+2 Fig.9 : Relative variation of gate trigger current and holding current versus junction temperature. Igt(TI] ihiTh Igt(T]=25 C) th{T}=25 C} 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 THC) -20 =O 20 40 60 80 100 120 140 Fig.11 : Non repetitive surge peak on-state cur- rent for a sinusoidal pulse with width : tp < 10ms, and corresponding value of It. Lrsn(A)- Pt (ats) 100 Tj initial = 25C 10 4/6 SGS-THOMSON ky. MICROELECTRELICS Fig.8 : Relative variation of thermal impedance junction to ambient versus pulse duration (TO202-2). Zth(|-a)/Aith(Fa) 1.00 0.10 tp(s) 0.01 1E3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig.10 : Non repetitive surge peak on-state current versus number of cycles. IrsMiA) 35 T T_TTITtT Tj initial = 25C 30 25 20 rH he 15 < > 40 rs P| 5 Number of cycles 1 10 100 1000 Fig.12 : On-state characteristics (maximum val- ues). IpmfA) 100 Ty inital 25C 10 T) max Vto =0 95V Rt =0 1009 Vrm) 0 05 1 1.5 2 2.5 3 3.5 4 mm 79e%237? OO77134 SLTX04xxxE/F PACKAGE MECHANICAL DATA TOQ202-1 (Plastic) DIMENSIONS REF. Millimeters Inches Typ. | Min. | Max.| Typ. | Min. | Max. A 10.1 0.398 B | 13.7 0.540 C i 73 0.287 D | 10.5 0.413 F 1.5 0.059 G | 32 0.126 H | 0.51 0.020 I 3.16 | 3.20 0.124/0.126 J 1.5 0.059 M | 45 0.177 N 5.3 0.209 N1 | 2.54 0.100 0 1.4 0.055 P 0.7 0.028 Marking : type number Weight: 1.4g 50, Sikora = m79e%237 OO77135 4TSX04xxxE/F PACKAGE MECHANICAL DATA T0202-2 (Plastic) DIMENSIONS REF. Millimeters Inches Typ. | Min. | Max. | Typ. | Min. | Max. A 4 A 10.1 0.398 B | 12 0.047 B J, Cc | 73 0.287 a D | 10.5 0.413 E | 7.4 0.290 F 15 0.059 iy ye tM H_ | 0.51 0.020 Po D J | 15 0.059 M | 45 0.177 ent N 5.3 0.209 "ON N1 | 2.54 0.100 O 1.4 0.055 P 0.7 0.028 Marking : type number Weight: 1.0g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in lite support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1895 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6 yz, SSS THOMSON wm 7929237 OO7713b 331