ARCHIVE INFORMATION
PRODUCT TRANSFERRED TO M/A–COM
1
MRF150MOTOROLA RF DEVICE DATA
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed primarily for linear large–signal output stages up to150 MHz
frequency range.
•Specified 50 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)
•Superior High Order IMD
•IMD(d3) (150 W PEP) — –32 dB (Typ)
•IMD(d11) (150 W PEP) — –60 dB (Typ)
•100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
•S–Parameters Available for Download into Frequency Domain Simulators.
See http://motorola.com/sps/rf/designtds/
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDSS 125 Vdc
Drain–Gate Voltage VDGO 125 Vdc
Gate–Source Voltage VGS ±40 Vdc
Drain Current — Continuous ID16 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD300
1.71 Watts
W/°C
Storage Temperature Range Tstg –65 to +150 °C
Operating Junction Temperature TJ200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 0.6 °C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF150/D
SEMICONDUCTOR TECHNICAL DATA
150 W, to 150 MHz
N–CHANNEL MOS
LINEAR RF POWER
FET
CASE 211–11, STYLE 2
Motorola, Inc. 1998
REV 9
ARCHIVE INFORMATION
PRODUCT TRANSFERRED TO M/A–COM
MRF150
2 MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V(BR)DSS 125 — — Vdc
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 5.0 mAdc
Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS — — 1.0 µAdc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 5.0 Vdc
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A) VDS(on) 1.0 3.0 5.0 Vdc
Forward Transconductance (VDS = 10 V, ID = 5.0 A) gfs 4.0 7.0 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss — 400 — pF
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Coss — 240 — pF
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Crss — 40 — pF
FUNCTIONAL TESTS (SSB)
Common Source Amplifier Power Gain f = 30 MHz
(VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 150 MHz Gps —
—17
8.0 —
—dB
Drain Efficiency
(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
ID (Max) = 3.75 A)
η— 45 — %
Intermodulation Distortion (1)
(VDD = 50 V, Pout = 150 W (PEP),
f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA) IMD(d3)
IMD(d11) —
—–32
–60 —
—
dB
Load Mismatch
(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
IDQ = 250 mA, VSWR 30:1 at all Phase Angles)
ψNo Degradation in Output Power
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
(VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 3.0 A)
GPS
IMD(d3)
IMD(d9–13)
—
—
—
20
–50
–75
—
—
—
dB
NOTE:
1. To MIL–STD–1311 V ersion A, Test Method 2204B, Two Tone, Reference Each Tone.
Figure 1. 30 MHz Test Circuit (Class AB)
C1 — 470 pF Dipped Mica
C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or
Monolythic with Short Leads
C3 — 200 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C4 — 15 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C10 — 10 µF/100 V Electrolytic
L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 51 Ω/1.0 W Carbon
R3 — 3.3 Ω/1.0 W Carbon (or 2.0 x 6.8 Ω/1/2 W in Parallel
T1 — 9:1 Broadband Transformer
T2 — 1:9 Broadband Transformer
ARCHIVE INFORMATION
PRODUCT TRANSFERRED TO M/A–COM
3
MRF150MOTOROLA RF DEVICE DATA
Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power
Figure 4. IMD versus Pout Figure 5. Common Source Unity Gain Frequency
versus Drain Current
Figure 6. Gate Voltage versus
Drain Current
ARCHIVE INFORMATION
PRODUCT TRANSFERRED TO M/A–COM
MRF150
4 MOTOROLA RF DEVICE DATA
Figure 7. Series Equivalent Impedance
Figure 8. 150 MHz Test Circuit (Class AB)
C1, C2, C8 — Arco 463 or equivalent
C3 — 25 pF, Unelco
C4 — 0.1 µF, Ceramic
C5 — 1.0 µF, 15 WV Tantalum
C6 — 25 pF, Unelco J101
C7 — 25 pF, Unelco J101
C9 — Arco 262 or equivalent
C10 — 0.05 µF, Ceramic
C11 — 15 µF, 60 WV Electrolytic
L1 — 3/4″, 18 AWG into Hairpin
L2 — Printed Line, 0.200″ x 0.500″
L3 — 1″, #16 AWG into Hairpin
L4 — 2 Turns #16 AWG, 5/16 ID
RFC1 — 5.6 µH, Choke
RFC2 — VK200–4B
R1 — 150 Ω, 1.0 W Carbon
R2 — 10 kΩ, 1/2 W Carbon
R3 — 120 Ω, 1/2 W Carbon
Ω
ARCHIVE INFORMATION
PRODUCT TRANSFERRED TO M/A–COM
5
MRF150MOTOROLA RF DEVICE DATA
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Table 1. Common Source S–Parameters (VDS = 50 V, ID = 2 A)
f
S11 S21 S12 S22
f
MHz |S11|∠φ|S21|∠φ|S12|∠φ|S22|∠φ
30
ÁÁÁÁÁ
ÁÁÁÁÁ
0.936
ÁÁÁÁÁ
ÁÁÁÁÁ
–179
ÁÁÁÁ
ÁÁÁÁ
4.13
ÁÁÁÁÁ
ÁÁÁÁÁ
84
ÁÁÁÁ
ÁÁÁÁ
0.011
ÁÁÁÁÁ
ÁÁÁÁÁ
22
ÁÁÁÁÁ
ÁÁÁÁÁ
0.844
ÁÁÁÁ
ÁÁÁÁ
–176
ÁÁÁÁ
ÁÁÁÁ
40
ÁÁÁÁÁ
ÁÁÁÁÁ
0.936
ÁÁÁÁÁ
ÁÁÁÁÁ
–179
ÁÁÁÁ
ÁÁÁÁ
3.16
ÁÁÁÁÁ
ÁÁÁÁÁ
79
ÁÁÁÁ
ÁÁÁÁ
0.012
ÁÁÁÁÁ
ÁÁÁÁÁ
23
ÁÁÁÁÁ
ÁÁÁÁÁ
0.842
ÁÁÁÁ
ÁÁÁÁ
–180
ÁÁÁÁ
ÁÁÁÁ
50
ÁÁÁÁÁ
ÁÁÁÁÁ
0.936
ÁÁÁÁÁ
ÁÁÁÁÁ
–180
ÁÁÁÁ
ÁÁÁÁ
2.52
ÁÁÁÁÁ
ÁÁÁÁÁ
75
ÁÁÁÁ
ÁÁÁÁ
0.013
ÁÁÁÁÁ
ÁÁÁÁÁ
29
ÁÁÁÁÁ
ÁÁÁÁÁ
0.855
ÁÁÁÁ
ÁÁÁÁ
–179
ÁÁÁÁ
ÁÁÁÁ
60
ÁÁÁÁÁ
ÁÁÁÁÁ
0.937
ÁÁÁÁÁ
ÁÁÁÁÁ
180
ÁÁÁÁ
ÁÁÁÁ
2.13
ÁÁÁÁÁ
ÁÁÁÁÁ
72
ÁÁÁÁ
ÁÁÁÁ
0.014
ÁÁÁÁÁ
ÁÁÁÁÁ
36
ÁÁÁÁÁ
ÁÁÁÁÁ
0.854
ÁÁÁÁ
ÁÁÁÁ
179
ÁÁÁÁ
ÁÁÁÁ
70
ÁÁÁÁÁ
ÁÁÁÁÁ
0.939
ÁÁÁÁÁ
ÁÁÁÁÁ
179
ÁÁÁÁ
ÁÁÁÁ
1.81
ÁÁÁÁÁ
ÁÁÁÁÁ
68
ÁÁÁÁ
ÁÁÁÁ
0.013
ÁÁÁÁÁ
ÁÁÁÁÁ
42
ÁÁÁÁÁ
ÁÁÁÁÁ
0.870
ÁÁÁÁ
ÁÁÁÁ
179
ÁÁÁÁ
ÁÁÁÁ
80
ÁÁÁÁÁ
ÁÁÁÁÁ
0.940
ÁÁÁÁÁ
ÁÁÁÁÁ
179
ÁÁÁÁ
ÁÁÁÁ
1.53
ÁÁÁÁÁ
ÁÁÁÁÁ
67
ÁÁÁÁ
ÁÁÁÁ
0.013
ÁÁÁÁÁ
ÁÁÁÁÁ
45
ÁÁÁÁÁ
ÁÁÁÁÁ
0.868
ÁÁÁÁ
ÁÁÁÁ
–179
ÁÁÁÁ
ÁÁÁÁ
90
ÁÁÁÁÁ
ÁÁÁÁÁ
0.941
ÁÁÁÁÁ
ÁÁÁÁÁ
179
ÁÁÁÁ
ÁÁÁÁ
1.34
ÁÁÁÁÁ
ÁÁÁÁÁ
65
ÁÁÁÁ
ÁÁÁÁ
0.014
ÁÁÁÁÁ
ÁÁÁÁÁ
46
ÁÁÁÁÁ
ÁÁÁÁÁ
0.855
ÁÁÁÁ
ÁÁÁÁ
–178
ÁÁÁÁ
ÁÁÁÁ
100
ÁÁÁÁÁ
ÁÁÁÁÁ
0.942
ÁÁÁÁÁ
ÁÁÁÁÁ
179
ÁÁÁÁ
ÁÁÁÁ
1.21
ÁÁÁÁÁ
ÁÁÁÁÁ
60
ÁÁÁÁ
ÁÁÁÁ
0.016
ÁÁÁÁÁ
ÁÁÁÁÁ
46
ÁÁÁÁÁ
ÁÁÁÁÁ
0.874
ÁÁÁÁ
ÁÁÁÁ
180
ÁÁÁÁ
ÁÁÁÁ
110
ÁÁÁÁÁ
ÁÁÁÁÁ
0.942
ÁÁÁÁÁ
ÁÁÁÁÁ
179
ÁÁÁÁ
ÁÁÁÁ
1.11
ÁÁÁÁÁ
ÁÁÁÁÁ
58
ÁÁÁÁ
ÁÁÁÁ
0.018
ÁÁÁÁÁ
ÁÁÁÁÁ
52
ÁÁÁÁÁ
ÁÁÁÁÁ
0.875
ÁÁÁÁ
ÁÁÁÁ
178
ÁÁÁÁ
ÁÁÁÁ
120
ÁÁÁÁÁ
ÁÁÁÁÁ
0.945
ÁÁÁÁÁ
ÁÁÁÁÁ
178
ÁÁÁÁ
ÁÁÁÁ
0.99
ÁÁÁÁÁ
ÁÁÁÁÁ
56
ÁÁÁÁ
ÁÁÁÁ
0.019
ÁÁÁÁÁ
ÁÁÁÁÁ
61
ÁÁÁÁÁ
ÁÁÁÁÁ
0.893
ÁÁÁÁ
ÁÁÁÁ
180
ÁÁÁÁ
ÁÁÁÁ
130
ÁÁÁÁÁ
ÁÁÁÁÁ
0.946
ÁÁÁÁÁ
ÁÁÁÁÁ
178
ÁÁÁÁ
ÁÁÁÁ
0.88
ÁÁÁÁÁ
ÁÁÁÁÁ
53
ÁÁÁÁ
ÁÁÁÁ
0.019
ÁÁÁÁÁ
ÁÁÁÁÁ
67
ÁÁÁÁÁ
ÁÁÁÁÁ
0.902
ÁÁÁÁ
ÁÁÁÁ
–179
ÁÁÁÁ
ÁÁÁÁ
140
ÁÁÁÁÁ
ÁÁÁÁÁ
0.947
ÁÁÁÁÁ
ÁÁÁÁÁ
178
ÁÁÁÁ
ÁÁÁÁ
0.83
ÁÁÁÁÁ
ÁÁÁÁÁ
52
ÁÁÁÁ
ÁÁÁÁ
0.019
ÁÁÁÁÁ
ÁÁÁÁÁ
68
ÁÁÁÁÁ
ÁÁÁÁÁ
0.919
ÁÁÁÁ
ÁÁÁÁ
–179
ÁÁÁÁ
ÁÁÁÁ
150
ÁÁÁÁÁ
ÁÁÁÁÁ
0.949
ÁÁÁÁÁ
ÁÁÁÁÁ
177
ÁÁÁÁ
ÁÁÁÁ
0.74
ÁÁÁÁÁ
ÁÁÁÁÁ
49
ÁÁÁÁ
ÁÁÁÁ
0.020
ÁÁÁÁÁ
ÁÁÁÁÁ
63
ÁÁÁÁÁ
ÁÁÁÁÁ
0.910
ÁÁÁÁ
ÁÁÁÁ
–179
ÁÁÁÁ
ÁÁÁÁ
160
ÁÁÁÁÁ
ÁÁÁÁÁ
0.949
ÁÁÁÁÁ
ÁÁÁÁÁ
177
ÁÁÁÁ
ÁÁÁÁ
0.71
ÁÁÁÁÁ
ÁÁÁÁÁ
46
ÁÁÁÁ
ÁÁÁÁ
0.024
ÁÁÁÁÁ
ÁÁÁÁÁ
62
ÁÁÁÁÁ
ÁÁÁÁÁ
0.889
ÁÁÁÁ
ÁÁÁÁ
–180
ÁÁÁÁ
ÁÁÁÁ
170
ÁÁÁÁÁ
ÁÁÁÁÁ
0.952
ÁÁÁÁÁ
ÁÁÁÁÁ
177
ÁÁÁÁ
ÁÁÁÁ
0.65
ÁÁÁÁÁ
ÁÁÁÁÁ
44
ÁÁÁÁ
ÁÁÁÁ
0.026
ÁÁÁÁÁ
ÁÁÁÁÁ
68
ÁÁÁÁÁ
ÁÁÁÁÁ
0.878
ÁÁÁÁ
ÁÁÁÁ
179
ÁÁÁÁ
ÁÁÁÁ
180
ÁÁÁÁÁ
ÁÁÁÁÁ
0.953
ÁÁÁÁÁ
ÁÁÁÁÁ
177
ÁÁÁÁ
ÁÁÁÁ
0.59
ÁÁÁÁÁ
ÁÁÁÁÁ
42
ÁÁÁÁ
ÁÁÁÁ
0.029
ÁÁÁÁÁ
ÁÁÁÁÁ
72
ÁÁÁÁÁ
ÁÁÁÁÁ
0.921
ÁÁÁÁ
ÁÁÁÁ
179
ÁÁÁÁ
ÁÁÁÁ
190
ÁÁÁÁÁ
ÁÁÁÁÁ
0.954
ÁÁÁÁÁ
ÁÁÁÁÁ
176
ÁÁÁÁ
ÁÁÁÁ
0.57
ÁÁÁÁÁ
ÁÁÁÁÁ
41
ÁÁÁÁ
ÁÁÁÁ
0.029
ÁÁÁÁÁ
ÁÁÁÁÁ
75
ÁÁÁÁÁ
ÁÁÁÁÁ
0.949
ÁÁÁÁ
ÁÁÁÁ
178
ÁÁÁÁ
ÁÁÁÁ
200
ÁÁÁÁÁ
ÁÁÁÁÁ
0.956
ÁÁÁÁÁ
ÁÁÁÁÁ
176
ÁÁÁÁ
ÁÁÁÁ
0.52
ÁÁÁÁÁ
ÁÁÁÁÁ
39
ÁÁÁÁ
ÁÁÁÁ
0.028
ÁÁÁÁÁ
ÁÁÁÁÁ
74
ÁÁÁÁÁ
ÁÁÁÁÁ
0.929
ÁÁÁÁ
ÁÁÁÁ
178
ÁÁÁÁ
ÁÁÁÁ
210
ÁÁÁÁÁ
ÁÁÁÁÁ
0.955
ÁÁÁÁÁ
ÁÁÁÁÁ
176
ÁÁÁÁ
ÁÁÁÁ
0.51
ÁÁÁÁÁ
ÁÁÁÁÁ
38
ÁÁÁÁ
ÁÁÁÁ
0.030
ÁÁÁÁÁ
ÁÁÁÁÁ
71
ÁÁÁÁÁ
ÁÁÁÁÁ
0.934
ÁÁÁÁ
ÁÁÁÁ
179
ÁÁÁÁ
ÁÁÁÁ
220
ÁÁÁÁÁ
ÁÁÁÁÁ
0.957
ÁÁÁÁÁ
ÁÁÁÁÁ
175
ÁÁÁÁ
ÁÁÁÁ
0.49
ÁÁÁÁÁ
ÁÁÁÁÁ
35
ÁÁÁÁ
ÁÁÁÁ
0.034
ÁÁÁÁÁ
ÁÁÁÁÁ
70
ÁÁÁÁÁ
ÁÁÁÁÁ
0.918
ÁÁÁÁ
ÁÁÁÁ
177
ÁÁÁÁ
ÁÁÁÁ
230
ÁÁÁÁÁ
ÁÁÁÁÁ
0.960
ÁÁÁÁÁ
ÁÁÁÁÁ
175
ÁÁÁÁ
ÁÁÁÁ
0.43
ÁÁÁÁÁ
ÁÁÁÁÁ
32
ÁÁÁÁ
ÁÁÁÁ
0.039
ÁÁÁÁÁ
ÁÁÁÁÁ
71
ÁÁÁÁÁ
ÁÁÁÁÁ
0.977
ÁÁÁÁ
ÁÁÁÁ
175
ÁÁÁÁ
ÁÁÁÁ
240
ÁÁÁÁÁ
ÁÁÁÁÁ
0.959
ÁÁÁÁÁ
ÁÁÁÁÁ
175
ÁÁÁÁ
ÁÁÁÁ
0.42
ÁÁÁÁÁ
ÁÁÁÁÁ
32
ÁÁÁÁ
ÁÁÁÁ
0.040
ÁÁÁÁÁ
ÁÁÁÁÁ
74
ÁÁÁÁÁ
ÁÁÁÁÁ
0.941
ÁÁÁÁ
ÁÁÁÁ
175
ÁÁÁÁ
ÁÁÁÁ
250
ÁÁÁÁÁ
ÁÁÁÁÁ
0.961
ÁÁÁÁÁ
ÁÁÁÁÁ
175
ÁÁÁÁ
ÁÁÁÁ
0.39
ÁÁÁÁÁ
ÁÁÁÁÁ
32
ÁÁÁÁ
ÁÁÁÁ
0.040
ÁÁÁÁÁ
ÁÁÁÁÁ
77
ÁÁÁÁÁ
ÁÁÁÁÁ
0.944
ÁÁÁÁ
ÁÁÁÁ
176
ÁÁÁÁ
ÁÁÁÁ
260
ÁÁÁÁÁ
ÁÁÁÁÁ
0.961
ÁÁÁÁÁ
ÁÁÁÁÁ
175
ÁÁÁÁ
ÁÁÁÁ
0.36
ÁÁÁÁÁ
ÁÁÁÁÁ
31
ÁÁÁÁ
ÁÁÁÁ
0.040
ÁÁÁÁÁ
ÁÁÁÁÁ
76
ÁÁÁÁÁ
ÁÁÁÁÁ
0.948
ÁÁÁÁ
ÁÁÁÁ
177
ÁÁÁÁ
ÁÁÁÁ
270
ÁÁÁÁÁ
ÁÁÁÁÁ
0.960
ÁÁÁÁÁ
ÁÁÁÁÁ
174
ÁÁÁÁ
ÁÁÁÁ
0.35
ÁÁÁÁÁ
ÁÁÁÁÁ
29
ÁÁÁÁ
ÁÁÁÁ
0.043
ÁÁÁÁÁ
ÁÁÁÁÁ
74
ÁÁÁÁÁ
ÁÁÁÁÁ
0.947
ÁÁÁÁ
ÁÁÁÁ
175
ÁÁÁÁ
ÁÁÁÁ
280
ÁÁÁÁÁ
ÁÁÁÁÁ
0.963
ÁÁÁÁÁ
ÁÁÁÁÁ
174
ÁÁÁÁ
ÁÁÁÁ
0.34
ÁÁÁÁÁ
ÁÁÁÁÁ
29
ÁÁÁÁ
ÁÁÁÁ
0.046
ÁÁÁÁÁ
ÁÁÁÁÁ
73
ÁÁÁÁÁ
ÁÁÁÁÁ
0.929
ÁÁÁÁ
ÁÁÁÁ
174
ÁÁÁÁ
ÁÁÁÁ
290
ÁÁÁÁÁ
ÁÁÁÁÁ
0.963
ÁÁÁÁÁ
ÁÁÁÁÁ
174
ÁÁÁÁ
ÁÁÁÁ
0.32
ÁÁÁÁÁ
ÁÁÁÁÁ
25
ÁÁÁÁ
ÁÁÁÁ
0.048
ÁÁÁÁÁ
ÁÁÁÁÁ
74
ÁÁÁÁÁ
ÁÁÁÁÁ
0.918
ÁÁÁÁ
ÁÁÁÁ
172
ÁÁÁÁ
ÁÁÁÁ
300
ÁÁÁÁÁ
ÁÁÁÁÁ
0.965
ÁÁÁÁÁ
ÁÁÁÁÁ
173
ÁÁÁÁ
ÁÁÁÁ
0.32
ÁÁÁÁÁ
ÁÁÁÁÁ
28
ÁÁÁÁ
ÁÁÁÁ
0.051
ÁÁÁÁÁ
ÁÁÁÁÁ
78
ÁÁÁÁÁ
ÁÁÁÁÁ
0.925
ÁÁÁÁ
ÁÁÁÁ
174
ÁÁÁÁ
ÁÁÁÁ
310
ÁÁÁÁÁ
ÁÁÁÁÁ
0.966
ÁÁÁÁÁ
ÁÁÁÁÁ
173
ÁÁÁÁ
ÁÁÁÁ
0.29
ÁÁÁÁÁ
ÁÁÁÁÁ
27
ÁÁÁÁ
ÁÁÁÁ
0.052
ÁÁÁÁÁ
ÁÁÁÁÁ
79
ÁÁÁÁÁ
ÁÁÁÁÁ
0.953
ÁÁÁÁ
ÁÁÁÁ
174
ÁÁÁÁ
ÁÁÁÁ
320
ÁÁÁÁÁ
ÁÁÁÁÁ
0.963
ÁÁÁÁÁ
ÁÁÁÁÁ
173
ÁÁÁÁ
ÁÁÁÁ
0.28
ÁÁÁÁÁ
ÁÁÁÁÁ
26
ÁÁÁÁ
ÁÁÁÁ
0.054
ÁÁÁÁÁ
ÁÁÁÁÁ
76
ÁÁÁÁÁ
ÁÁÁÁÁ
0.954
ÁÁÁÁ
ÁÁÁÁ
172
ÁÁÁÁ
ÁÁÁÁ
330
ÁÁÁÁÁ
ÁÁÁÁÁ
0.965
ÁÁÁÁÁ
ÁÁÁÁÁ
172
ÁÁÁÁ
ÁÁÁÁ
0.26
ÁÁÁÁÁ
ÁÁÁÁÁ
22
ÁÁÁÁ
ÁÁÁÁ
0.057
ÁÁÁÁÁ
ÁÁÁÁÁ
74
ÁÁÁÁÁ
ÁÁÁÁÁ
0.914
ÁÁÁÁ
ÁÁÁÁ
171
ÁÁÁÁ
ÁÁÁÁ
340
ÁÁÁÁÁ
ÁÁÁÁÁ
0.966
ÁÁÁÁÁ
ÁÁÁÁÁ
172
ÁÁÁÁ
ÁÁÁÁ
0.26
ÁÁÁÁÁ
ÁÁÁÁÁ
27
ÁÁÁÁ
ÁÁÁÁ
0.058
ÁÁÁÁÁ
ÁÁÁÁÁ
72
ÁÁÁÁÁ
ÁÁÁÁÁ
0.925
ÁÁÁÁ
ÁÁÁÁ
171
ÁÁÁÁ
ÁÁÁÁ
350
ÁÁÁÁÁ
ÁÁÁÁÁ
0.965
ÁÁÁÁÁ
ÁÁÁÁÁ
172
ÁÁÁÁ
ÁÁÁÁ
0.26
ÁÁÁÁÁ
ÁÁÁÁÁ
25
ÁÁÁÁ
ÁÁÁÁ
0.062
ÁÁÁÁÁ
ÁÁÁÁÁ
75
ÁÁÁÁÁ
ÁÁÁÁÁ
0.934
ÁÁÁÁ
ÁÁÁÁ
171
ÁÁÁÁ
ÁÁÁÁ
360
ÁÁÁÁÁ
ÁÁÁÁÁ
0.968
ÁÁÁÁÁ
ÁÁÁÁÁ
171
ÁÁÁÁ
ÁÁÁÁ
0.25
ÁÁÁÁÁ
ÁÁÁÁÁ
25
ÁÁÁÁ
ÁÁÁÁ
0.065
ÁÁÁÁÁ
ÁÁÁÁÁ
74
ÁÁÁÁÁ
ÁÁÁÁÁ
0.979
ÁÁÁÁ
ÁÁÁÁ
171
ÁÁÁÁ
ÁÁÁÁ
370
ÁÁÁÁÁ
ÁÁÁÁÁ
0.967
ÁÁÁÁÁ
ÁÁÁÁÁ
171
ÁÁÁÁ
ÁÁÁÁ
0.23
ÁÁÁÁÁ
ÁÁÁÁÁ
24
ÁÁÁÁ
ÁÁÁÁ
0.064
ÁÁÁÁÁ
ÁÁÁÁÁ
73
ÁÁÁÁÁ
ÁÁÁÁÁ
0.993
ÁÁÁÁ
ÁÁÁÁ
168
ÁÁÁÁ
ÁÁÁÁ
380
ÁÁÁÁÁ
ÁÁÁÁÁ
0.967
ÁÁÁÁÁ
ÁÁÁÁÁ
171
ÁÁÁÁ
ÁÁÁÁ
0.24
ÁÁÁÁÁ
ÁÁÁÁÁ
22
ÁÁÁÁ
ÁÁÁÁ
0.068
ÁÁÁÁÁ
ÁÁÁÁÁ
74
ÁÁÁÁÁ
ÁÁÁÁÁ
0.952
ÁÁÁÁ
ÁÁÁÁ
172
ÁÁÁÁ
ÁÁÁÁ
390
ÁÁÁÁÁ
ÁÁÁÁÁ
0.969
ÁÁÁÁÁ
ÁÁÁÁÁ
170
ÁÁÁÁ
ÁÁÁÁ
0.22
ÁÁÁÁÁ
ÁÁÁÁÁ
26
ÁÁÁÁ
ÁÁÁÁ
0.069
ÁÁÁÁÁ
ÁÁÁÁÁ
74
ÁÁÁÁÁ
ÁÁÁÁÁ
0.942
ÁÁÁÁ
ÁÁÁÁ
170
ÁÁÁÁ
ÁÁÁÁ
400
ÁÁÁÁÁ
ÁÁÁÁÁ
0.968
ÁÁÁÁÁ
ÁÁÁÁÁ
170
ÁÁÁÁ
ÁÁÁÁ
0.21
ÁÁÁÁÁ
ÁÁÁÁÁ
23
ÁÁÁÁ
ÁÁÁÁ
0.072
ÁÁÁÁÁ
ÁÁÁÁÁ
76
ÁÁÁÁÁ
ÁÁÁÁÁ
0.936
ÁÁÁÁ
ÁÁÁÁ
172
ÁÁÁÁ
ÁÁÁÁ
410
ÁÁÁÁÁ
ÁÁÁÁÁ
0.968
ÁÁÁÁÁ
ÁÁÁÁÁ
170
ÁÁÁÁ
ÁÁÁÁ
0.21
ÁÁÁÁÁ
ÁÁÁÁÁ
24
ÁÁÁÁ
ÁÁÁÁ
0.076
ÁÁÁÁÁ
ÁÁÁÁÁ
73
ÁÁÁÁÁ
ÁÁÁÁÁ
0.984
ÁÁÁÁ
ÁÁÁÁ
168
ÁÁÁÁ
ÁÁÁÁ
420
ÁÁÁÁÁ
ÁÁÁÁÁ
0.970
ÁÁÁÁÁ
ÁÁÁÁÁ
169
ÁÁÁÁ
ÁÁÁÁ
0.20
ÁÁÁÁÁ
ÁÁÁÁÁ
25
ÁÁÁÁ
ÁÁÁÁ
0.078
ÁÁÁÁÁ
ÁÁÁÁÁ
71
ÁÁÁÁÁ
ÁÁÁÁÁ
0.977
ÁÁÁÁ
ÁÁÁÁ
167
ÁÁÁÁ
ÁÁÁÁ
430
ÁÁÁÁÁ
ÁÁÁÁÁ
0.969
ÁÁÁÁÁ
ÁÁÁÁÁ
169
ÁÁÁÁ
ÁÁÁÁ
0.18
ÁÁÁÁÁ
ÁÁÁÁÁ
25
ÁÁÁÁ
ÁÁÁÁ
0.082
ÁÁÁÁÁ
ÁÁÁÁÁ
72
ÁÁÁÁÁ
ÁÁÁÁÁ
0.959
ÁÁÁÁ
ÁÁÁÁ
168
ÁÁÁÁ
ÁÁÁÁ
440
ÁÁÁÁÁ
ÁÁÁÁÁ
0.970
ÁÁÁÁÁ
ÁÁÁÁÁ
169
ÁÁÁÁ
ÁÁÁÁ
0.19
ÁÁÁÁÁ
ÁÁÁÁÁ
25
ÁÁÁÁ
ÁÁÁÁ
0.082
ÁÁÁÁÁ
ÁÁÁÁÁ
73
ÁÁÁÁÁ
ÁÁÁÁÁ
0.953
ÁÁÁÁ
ÁÁÁÁ
169
ARCHIVE INFORMATION
PRODUCT TRANSFERRED TO M/A–COM
MRF150
6 MOTOROLA RF DEVICE DATA
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Table 1. Common Source S–Parameters (VDS = 50 V, ID = 2 A) (continued)
f
MHz
S22
S12
S21
S11
f
MHz ∠φ|S22|∠φ|S12|∠φ|S21|∠φ|S11|
ÁÁÁÁÁ
ÁÁÁÁÁ
450
ÁÁÁÁÁ
ÁÁÁÁÁ
0.971
ÁÁÁÁ
ÁÁÁÁ
168
ÁÁÁÁÁ
ÁÁÁÁÁ
0.19
ÁÁÁÁÁ
ÁÁÁÁÁ
24
ÁÁÁÁ
ÁÁÁÁ
0.085
ÁÁÁÁÁ
ÁÁÁÁÁ
75
ÁÁÁÁ
ÁÁÁÁ
0.960
ÁÁÁÁÁ
ÁÁÁÁÁ
168
ÁÁÁÁÁ
ÁÁÁÁÁ
460
ÁÁÁÁÁ
ÁÁÁÁÁ
0.972
ÁÁÁÁ
ÁÁÁÁ
168
ÁÁÁÁÁ
ÁÁÁÁÁ
0.17
ÁÁÁÁÁ
ÁÁÁÁÁ
26
ÁÁÁÁ
ÁÁÁÁ
0.086
ÁÁÁÁÁ
ÁÁÁÁÁ
70
ÁÁÁÁ
ÁÁÁÁ
0.960
ÁÁÁÁÁ
ÁÁÁÁÁ
164
ÁÁÁÁÁ
ÁÁÁÁÁ
470
ÁÁÁÁÁ
ÁÁÁÁÁ
0.972
ÁÁÁÁ
ÁÁÁÁ
168
ÁÁÁÁÁ
ÁÁÁÁÁ
0.17
ÁÁÁÁÁ
ÁÁÁÁÁ
23
ÁÁÁÁ
ÁÁÁÁ
0.087
ÁÁÁÁÁ
ÁÁÁÁÁ
70
ÁÁÁÁ
ÁÁÁÁ
0.952
ÁÁÁÁÁ
ÁÁÁÁÁ
165
ÁÁÁÁÁ
ÁÁÁÁÁ
480
ÁÁÁÁÁ
ÁÁÁÁÁ
0.969
ÁÁÁÁ
ÁÁÁÁ
167
ÁÁÁÁÁ
ÁÁÁÁÁ
0.18
ÁÁÁÁÁ
ÁÁÁÁÁ
26
ÁÁÁÁ
ÁÁÁÁ
0.093
ÁÁÁÁÁ
ÁÁÁÁÁ
70
ÁÁÁÁ
ÁÁÁÁ
0.977
ÁÁÁÁÁ
ÁÁÁÁÁ
166
ÁÁÁÁÁ
ÁÁÁÁÁ
490
ÁÁÁÁÁ
ÁÁÁÁÁ
0.969
ÁÁÁÁ
ÁÁÁÁ
167
ÁÁÁÁÁ
ÁÁÁÁÁ
0.18
ÁÁÁÁÁ
ÁÁÁÁÁ
25
ÁÁÁÁ
ÁÁÁÁ
0.099
ÁÁÁÁÁ
ÁÁÁÁÁ
71
ÁÁÁÁ
ÁÁÁÁ
0.966
ÁÁÁÁÁ
ÁÁÁÁÁ
166
ÁÁÁÁÁ
ÁÁÁÁÁ
500
ÁÁÁÁÁ
ÁÁÁÁÁ
0.969
ÁÁÁÁ
ÁÁÁÁ
166
ÁÁÁÁÁ
ÁÁÁÁÁ
0.17
ÁÁÁÁÁ
ÁÁÁÁÁ
26
ÁÁÁÁ
ÁÁÁÁ
0.101
ÁÁÁÁÁ
ÁÁÁÁÁ
71
ÁÁÁÁ
ÁÁÁÁ
0.972
ÁÁÁÁÁ
ÁÁÁÁÁ
164
ARCHIVE INFORMATION
PRODUCT TRANSFERRED TO M/A–COM
7
MRF150MOTOROLA RF DEVICE DATA
RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between the terminals. The metal oxide gate structure
determines the capacitors from gate–to–drain (Cgd), and
gate–to–source (Cgs). The PN junction formed during the
fabrication of the RF MOSFET results in a junction capaci-
tance from drain–to–source (Cds).
These capacitances are characterized as input (Ciss),
output ( C oss) and reverse transfer (Crss) capacitances on data
sheets. The relationships between the inter–terminal capaci-
tances and those given on data sheets are shown below. The
Ciss can be specified in two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate. In the latter case the numbers are lower.
However, neither method represents the actual operat-
ing conditions in RF applications.
LINEARITY AND GAIN CHARACTERISTICS
In addition to the typical IMD and power gain data
presented, Figure 5 may give the designer additional informa-
tion o n the capabilities of this device. The graph represents the
small signal unity current gain frequency at a given drain
current level. This is equivalent to fT for bipolar transistors.
Since this test is performed at a fast sweep speed, heating of
the device does not occur. Thus, in normal use, the higher
temperatures may degrade these characteristics to some
extent.
DRAIN CHARACTERISTICS
One figure of merit for a FET is its static resistance in the
full–on condition. This on–resistance, VDS(on), occurs in the
linear region of the output characteristic and is specified under
specific test conditions for gate–source voltage and drain
current. For MOSFETs, VDS(on) has a positive temperature
coefficient and constitutes an important design consideration
at high temperatures, because it contributes to the power
dissipation within the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide. The
input resistance is very high — on the order of 109 ohms —
resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage
slightly in excess of the gate–to–source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are
essentially capacitors. Circuits that leave the gate open–cir-
cuited or floating should be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on the
input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protection
is required, an external zener diode is recommended.
EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY
Collector Drain. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Source. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Gate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V(BR)CES V(BR)DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCBO VDGO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ICID
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ICES IDSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEBO IGSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VBE(on) VGS(th)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCE(sat) VDS(on)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cib Ciss
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cob Coss
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
hfe gfs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RCE(sat) = VCE(sat)
ICrDS(on) = VDS(on)
ID
MRF150
8 MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 211–11
ISSUE N
A
UM
M
Q
RB
D
K
E
C
J
H
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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Mfax is a trademark of Motorola, Inc.
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MRF150/D
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