2SB1203 - ON Semiconductor L.L.C.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

PNP/NPN Epitaxial Planar Silicon Transistors

High-Current Switching Applications

Ordering number:ENN2085B

2SB1203/2SD1803

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N2503TN (KT)/92098HA (KT)/8309MO/3097AT, TS No.2085–1/5

Package Dimensions

unit:mm

2045B

[2SB1203/2SD1803]

Applications

· Relay drivers, high-speed inverters, converters, and

other general high-current switching applications.

Features

· Low collector-to-emitter saturation voltage.

· High current and high fT.

· Excellent linearity of hFE.

· Fast switching speed.

· Small and slim package making it easy to make

2SB1203/2SD1803-applied sets smaller.

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

unit:mm

2044B

[2SB1203/2SD1803]

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP-FA

5.0

6.5

0.85

0.7

0.6

1.5

5.5

7.0

0.8

1.6

7.5

0.5

1.2

2.3 0.5

123

2.3 2.3

6.5 2.3 0.5

1.55.5

0.8

7.0

1.2

2.5

5.0

0.85 0.5

1.2

0 to 0.2

2.3 2.3

0.612

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

http://semicon.sanyo.com/en/network

2SB1203/2SD1803

No.2085–2/5

( ) : 2SB1203

Specifications

Absolute Maximum Ratings at Ta = 25˚C

˚C

Electrical Characteristics at Ta = 25˚C

Tc=25˚C

Switching Time Test Circuit

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

OBC 06)–(V

egatloVrettimE-ot-rotcelloCV

OEC 05)–(V

egatloVesaB-ot-rettimEV

OBE 6)–(V

tnerruCrotcelloCI

C5)–(A

)esluP(tnerruCrotcelloCI

PC 8)–(A

noitapissiDrotcelloCP

C1W

02W

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

retemaraPlobmySsnoitidnoC sgnitaR tinU

nimpytxam

tnerruCffotuCrotcelloCI

OBC VBC I,V04)–(= E0=1)–(Aµ

tnerruCffotuCrettimEI

OBE VBE I,V4)–(= C0=1)–(Aµ

niaGtnerruCCD hEF 1V

EC I,V2)–(= CA5.0)–(=*07*004

hEF 2V

EC I,V2)–(= CA4)–(=53

tcudorPhtdiwdnaB-niaGf

TVEC I,V5)–(= CA1)–(= )031(zHM

081zHM

ecnaticapaCtuptuOC

bo VBC zHM1=f,V01)–(=04)06(Fp

egatloVnoitarutaSrettimE-ot-rotcelloCV

)tas(EC ICI,A3)–(= BA51.0)–(= 022004Vm

)082–()055–(Vm

egatloVnoitarutaSrettimE-ot-esaBV

)tas(EB ICI,A3)–(= BA51.0)–(=59.0)–(3.1)–(V

egatloVnwodkaerBesaB-ot-rotcelloCV

OBC)RB( ICI,Aµ01)–(= E0=06)–(V

egatloVnwodkaerBrettimE-ot-rotcelloCV

OEC)RB( ICR,Am1)–(= EB =∞05)–(V

egatloVnwodkaerBesaB-ot-rettimEV

OBE)RB( IEI,Aµ01)–(= C0=6)–(V

emiTNO-nruTt

no tiucriCtseTdeificepseeS)05(05sn

emiTegarotSt

gts tiucriCtseTdeificepseeS )054(sn

005sn

emiTllaFt

ftiucriCtseTdeificepseeS02)02(sn

* : The 2SB1203/2SD1803 are classified by 0.5A hFE as follows :

knaRQRST

hEF 041ot07002ot001082ot041004ot002

VRRB

VCC=25VVBE= --5V

50Ω

INPUT RL

OUTPUT

100µF 470µF

PW=20µsIB1

D.C.≤1% IB2

IC=10IB1= --10IB2=2A

(For PNP, the polarity is reversed.)

2SB1203/2SD1803

No.2085–3/5

--5

--4

--3

--2

--1

2SB1203

From top

--100mA

--90mA

--80mA

--70mA

--60mA

2SD1803

From top

50mA

45mA

40mA

35mA

30mA

IC -- VCE

IB=0

10mA

20mA

15mA

25mA

5mA

ITR09181

00 --2.0--1.6--0.4 --0.8 --1.2

IC -- VCE

--10mA

--50mA

--20mA

--30mA

--40mA

IB=0

ITR09180

00 0.8 2.00.4 1.2 1.6

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V

hFE -- IC

Ta=75°C

--25°C

25°C

Ta=75°C

--25°C

25°C

ITR09186

100

1000

100

1000

0.01 0.1 1.0--1.0--0.1

325573257 --10

32577 325573257 10

32577

--0.01

hFE -- IC

ITR09187

2SB1203

VCE= --2V 2SD1803

VCE=2V

2SB1203

VCE= --2V

Ta=75°C

--25°C

25°C

Ta=75°C

--25°C

25°C

--6

--5

--4

--3

--1

--2

0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0

IC -- VBE

ITR09184

2SD1803

VCE=2V

0 0.2 0.4 0.6 0.8 1.21.0

IC -- VBE

ITR09185

--5

--4

--3

--2

--1

2SB1203 2SD1803

IC -- VCE

IB=0

30mA

25mA

20mA

15mA

10mA

5mA

ITR09183

00 --10--8--2 --4 --6

IC -- VCE

--10mA

--15mA

--20mA

--25mA

--30mA

--5mA

IB=0

ITR09182

004 10268

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Base-to-Emitter Voltage, VBE –V

Collector Current, IC–A

Base-to-Emitter Voltage, VBE –V

DC Current Gain, hFE

Collector Current, IC–A

DC Current Gain, hFE

Collector Current, IC–A

2SB1203/2SD1803

No.2085–4/5

--0.1 --1.0

3257 3257 --10

3257

2SB1203

VCE= --5V

fT -- IC

100

1000

ITR09188 0.1 1.0

3257 3257 10

3257

2SD1803

VCE=5V

fT -- IC

100

1000

ITR09189

Collector Current, IC– A Collector Current, IC–A

Gain-Bandwidth Product, fT– MHz

VBE(sat) -- IC

--1.0

--10

1.0

2SD1667

ITR09194

VBE(sat) -- IC

ITR09195

Ta= --25°C

25°C

2SB1203

IC / IB=20 2SD1803

IC / IB=20

75°C

Ta=75°C

--25

°C

Ta=75°C

--25

°C

Ta= --25°C

25°C

75°C

VCE(sat) -- IC

--0.1--0.01 23 55723577--1.0 23 57

--10

--1000

--100

--10

VCE(sat) -- IC

ITR09192 ITR09193

0.01 0.1

7235572357

1.0 23 57

--0.1--0.01 23 55723577--1.0 23 57

--10 0.01 0.1

7235572357

1.0 23 57

1000

100

25°C

2SB1203

IC / IB=20 2SD1803

IC / IB=20

25°C

Cob -- VCB

372

1.0 10

5372575 100

ITR09191

2SD1803

f=1MHz

Cob -- VCB

100

372

--1.0 --10

5372575 --100

ITR09190

2SB1203

f=1MHz

Output Capacitance, Cob -- pF

Collector-to-Base Voltage, VCB -- V

Output Capacitance, Cob -- pF

Collector-to-Base Voltage, VCB -- V

Collector-to-Emitter

Saturation Voltage, VCE(sat) – mV

Collector Current, IC–A

Collector-to-Emitter

Saturation Voltage, VCE(sat) – mV

Collector Current, IC–A

Base-to-Emitter

Saturation Voltage, VBE(sat) – V

Collector Current, IC–A

Base-to-Emitter

Saturation Voltage, VBE(sat) – V

Collector Current, IC–A

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of November, 2003. Specifications and information herein are subject

to change without notice.

2SB1203/2SD1803

PS No.2085–5/5

2006040 80 100 140120 160

PC -- Ta

ITR09197

No heat sink

2SB1203 / 2SD1803

10ms

1.0

0.1

0.01 101.0 2537 2 537

0.1 2537 100

DC operation Ta=25°C

DC operation Tc=25°C

Tc=25°C

Single pulse

For PNP, minus sign is omitted.

ICP=8A

1ms

IC=5A

ITR09196

2SB1203 / 2SD1803

A S O

100ms

Collector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Collector Dissipation, PC–W

Ambient Temperature, Ta – ˚C