SOT-23 Plastic-Encapsulate Transistors ~S>._ BC856A/BLT1,857A/BLT1,858A/B/CLT1 TRANSISTOR (PNP) 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Power dissipation Pem: 0.3W (Tamb=25C) Collector current Icom: -0.1 A Gollector-base voltage VierR)cBo: BC856:-80V BC857:-50V BC858:-30V Operating and storage junction temperature range Tu, Tstg : -55C tot 150 UNIT: mm ELECTRICAL CHARACTERISTICS (Tamp=25C unless otherwise specified) Collector-base breakdown voltage V(BR}CBO Ic=-10n A, IE=0 780 -65 Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA, IB=0 748 Emitter-base breakdown voltage V(BR}JEBO le=-1 LA, IB=0 -5 Vv Vea=-70Vle=0 Collector cut-off current IcBo Vces-45V.16=0 -0.1 uA Vcse=-25V be=O0 Collector cut-off current icEO VonndOV tend -0.1 HA Vceep=-25V, 18=0 Emitter cut-off current leac Ves=-5V, lc=0 -0.1 nA BC856A,BC857A,BC858A 125 250 DC current gain | BC8568,BC857B,BC858B | Hre Vce=-5V, Ic=-2mA 220 475 BC858C 420 800 Coliector-emitter saturation voltage VcEsat ic=-100MA,la=-5mA -05/V Base-emitter saturation voltage VeEsat Ic=-100mA,lB=-5mA -1 v Transition frequency ft VcE=-5V,Ic=-10mA,f=100MHz | 100 MHz DEVICE MARKING : BC856A=3A,B8C856A=38,BC857A=3E,BC857B=3F,BC858=3),BC858B=3K, BC858C=3L 20900 ssi Typical Characteristics BC857,BC858 2.0 15 Vce =~10V Ta = 25C 1.0 0.7 05 0.3 here . NORMALIZED DC CURRENT GAIN 02 02 O05 -10 -290 -5.0 -10 -20 Ic, COLLECTOR CURRENT (mAdc) Normalized DC Current (mAdc) -50 -100 -200 Ta = 25C: Ic =-50 mA ic = -200 mA LL Ic = ~100 mA ic =-20 mA VceE , COLLECTOR-EMITTER VOLTAGE (V/) 0.02 O04 ~1.0 ~10 ~2 Ip, BASE CURRENT (mA) Collector Saturation Region BC856 0.2 hre . DC CURRENT GAIN (NORMALIZED) ~10-20 -50-10 -20 -50 -100 -200 0.1 -0.2 Ic, COLLECTOR CURRENT (AMP) 29 DBC Current Gain ~20 mA 50 mA -100 mAH ~200 mA -1.2 ~0.8 0.4 TS = 25C Vee. COLLECTOR-EMITTER VOLTAGE (VOLTS) 0 0.02 0.05 -01 02 O05 -10 -20 -50 -10 ~20 18, BASE CURRENT {mA) Collector Saturation Regin V. VOLTAGE (VOLTS) fr. CURRENT-GAIN - BANDWIDTH PRODUCT V, VOLTAGE (VOLTS} BC856A/BLT1,BC857A/BLT1,BC858A/B/CLT1 -1.0 0.9 0.8 Vek (sat) @ Ics = 10 -0.7 06 Vee(on} @ Vee =-10V -O5 04 03 0.2 ~0.1 Vce (sat) @ icp = 10 0 01-02 05 -10 20 50 -19 -2 - ~100 tc, COLLECTOR CURRENT (mAdc) "Saturation " and "On" Voltages 400 300 200 150 Vee =-10V Ta =25C 400 80 60 40 30 fr, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 20 05 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 Ic, COLLECTOR CURRENT (mAdc} Current-Gain-Bandwidth Product Ty = 25C Vee (sat) @ ic/ls = 10 Vee@ Vee =-5.0V Vee (sat) @ Ice = 10 02 O05 -10 -20 -50 -10 -20 -50 ~100 -200 ' , COLLECTOR CURRENT (mA) "On" Vce =-5.0V -1.0 -10 -100 Ic, COLLECTOR CURRENT (mA) Current-Gain-Bandwidth Product 210