DG411/412/413 Precision Monolithic Quad SPST CMOS Analog Switches Features Benefits Applications Widest Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing 44-V Supply Max Rating 15-V Analog Signal Range On-Resistance--rDS(on): 25 Fast Switching--tON: 110 ns Ultra Low Power--PD: 0.35 W TTL, CMOS Compatible Single Supply Capability Precision Automatic Test Equipment Precision Data Acquisition Communication Systems Battery Powered Systems Computer Peripherals Description The DG411 series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining low power (0.35 W) with high speed (tON: 110 ns), the DG411 family is ideally suited for portable and battery powered industrial and military applications. voltage silicon gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages up to the supply levels when off. The DG411 and DG412 respond to opposite control logic as shown in the Truth Table. The DG413 has two normally open and two normally closed switches. To achieve high-voltage ratings and superior switching performance, the DG411 series was built on Siliconix's high Functional Block Diagram and Pin Configuration DG411 DG411 Dual-In-Line and SOIC IN1 1 16 IN2 D1 2 15 D2 LCC D1 IN1 NC IN2 D2 Key S1 3 14 S2 S1 V- 4 13 V+ V- GND 5 12 VL NC S4 6 11 S3 GND D4 7 10 D3 S4 IN4 8 9 IN3 Top View 3 2 1 20 19 4 18 5 17 6 16 7 15 8 14 9 10 Truth Table S2 V+ NC VL S3 Logic DG411 DG412 0 ON OFF 1 OFF ON Logic "0" 0 0.8 V Logic "1" 2.4 V 11 12 13 D4 IN4 NC IN3 D3 Top View Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70050. Siliconix S-52883--Rev. C, 28-Apr-97 1 DG411/412/413 Functional Block Diagram and Pin Configuration DG413 DG413 Dual-In-Line and SOIC LCC IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 D1 IN1 NC IN2 D2 3 2 1 20 19 Key S1 V- NC GND S4 Truth Table 4 18 5 17 6 16 7 15 8 14 9 IN3 10 11 12 S2 Logic SW1, SW4 0 OFF ON 1 ON OFF V+ NC VL SW2, SW3 Logic "0" 0 0.8 V Logic "1" 2.4 24V S3 13 D4 IN4 NC IN3 D3 Top View Top View Ordering Information Temp Range Package Part Number DG411/412 -40 to 85_C -40 to 85_C 16-Pin Plastic DIP 16-Pin Narrow SOIC 16-Pin CerDIP -55 to 125_C LCC-20 DG411DJ DG412DJ DG411DY DG412DY DG411AK, DG411AK/883, 5962-9073101MEA DG412AK, DG412AK/883, 5962-9073102MEA DG411AZ/883, 5962-9073101M2A 5962-9073102M2A DG413 Temp Range -40toto8585_C _C -55 to 125_C Package Part Number 16-Pin Plastic DIP DG413DJ 16-Pin Narrow SOIC DG413DY 16-Pin CerDIP LCC-20 DG413AK, DG413AK/883, 5962-9073103MEA 5962-9073103M2A Absolute Maximum Ratings V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3 V) to (V+) +0.3 V Digital Inputsa, VS, VD . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed 1 ms, 10% Duty Cycle) . . . . . . . . 100 mA Storage Temperature (AK, AZ Suffix) . . . . . . . . . . -65 to 150_C (DJ, DY Suffix) . . . . . . . . . . . -65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 2 16-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW 16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW LCC-20e . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 25_C d. Derate 7.6 mW/_C above 75_C e. Derate 12 mW/_C above 75_C Siliconix S-52883--Rev. C, 28-Apr-97 DG411/412/413 Specificationsa Test Conditions Unless Otherwise Specified Parameter Symbol A Suffix D Suffix -55 to 125_C -40 to 85_C V+ = 15 V, V- = -15 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb V+ = 13.5 V, V- = -13.5 V IS = -10 mA, VD = 8.5 V Room Full 25 Room Full 0.1 -0.25 -20 0.25 20 -0.25 -5 0.25 5 Room Full 0.1 -0.25 -20 0.25 20 -0.25 -5 0.25 5 Typc Mind Maxd Mind Maxd Unit -15 15 -15 15 V 35 45 W Analog Switch Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Current L k C VANALOG rDS(on) IS(off) ID(off) Full V+ = 16.5,, V- = -16.5 V VD = 15.5 15 5 V, V VS = 15.5 15 5 V 35 45 ID(on) V+ = 16.5 V, V- = -16.5 V VS = VD = 15.5 V Room Full 0.1 -0.4 -40 0.4 40 -0.4 -10 0.4 10 Input Current, VIN Low IIL VIN Under Test = 0.8 V Full 0.005 -0.5 0.5 -0.5 0.5 Input Current, VIN High IIH VIN Under Test = 2.4 V Full 0.005 -0.5 0.5 -0.5 0.5 Room Full 110 175 240 175 220 Room Full 100 145 160 145 160 Channel On Leakage Current nA Digital Control mA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF p RL = 300 W , CL = 35 pF VS = 10 2 10 V See S Figure Fi Break-Before-Make Time Delay tD DG413 Only, VS = 10 V RL = 300 W , CL = 35 pF Room 25 Charge Injection Q Vg = 0 V, Rg = 0 W , CL = 10 nF Room 5 Isolatione OIRR Room 68 Room 85 Room 9 Off Channel-to-Channel Crosstalke XTALK Source Off Capacitancee CS(off) Drain Off Capacitancee CD(off) Channel On Capacitancee RL = 50 W , CL = 5 pF pF, f = 1 MHz Room 9 CD(on) Room 35 Positive Supply Current I+ Room Full 0.0001 Negative Supply Current I- Room Full -0.0001 Logic Supply Current IL Room Full 0.0001 Room Full -0.0001 f = 1 MHz ns pC dB pF Power Supplies Ground Current IGND Siliconix S-52883--Rev. C, 28-Apr-97 V+ = 16.5, V- = -16.5 V VIN = 0 or 5 V 1 5 -1 -5 1 5 -1 -5 1 5 -1 -5 mA 1 5 -1 -5 3 DG411/412/413 Specificationsa for Unipolar Supplies Test Conditions Unless Otherwise Specified Parameter Symbol V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb V+ = 10.8 V, IS = -10 mA VD = 3 V, 8 V Room Full 40 Room Hot Typc A Suffix D Suffix -55 to 125_C -40 to 85_C Mind Maxd Mind Maxd Unit 12 12 V 80 100 80 100 W 175 250 400 250 315 Room Hot 95 125 140 125 140 Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance Full rDS(on) Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF RL = 300 W , CL = 35 pF p VS = 8 V, V See S Figure Fi 2 Break-Before-Make Time Delay tD DG413 Only, VS = 8 V, RL = 300 W , CL = 35 pF Room 25 Charge Injection Q Vg = 6 V, Rg = 0 W , CL = 10 nF Room 25 ns pC Power Supplies Positive Supply Current I+ Room Hot 0.0001 Negative Supply Current I- Room Hot -0.0001 Logic Supply Current IL Room Hot 0.0001 IGND Room Hot -0.0001 5 VIN = 0 or 5 V V+ = 13 13.5, Ground Current 1 5 1 5 -1 -5 -1 -5 1 5 mA 1 5 -1 -5 -1 -5 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Typical Characteristics On-Resistance vs. VD and Power Supply Voltage On-Resistance vs. VD and Unipolar Supply Voltage 300 5 V TA = 25_C 45 VL = 5 V 250 40 35 25 10 V 12 V 15 V 20 150 V+ = 5 V 100 15 20 V 8V 10 12 V 50 15 V 5 20 V 0 0 -20 -15 -10 -5 0 5 VD - Drain Voltage (V) 4 V+ = 3 V VL = 3 V 200 8 V 30 VDS(on) ( W) rDS(on) - Drain-Source On-Resistance ( W 50 10 15 20 0 2 4 6 8 10 12 14 16 18 20 VD - Drain Voltage (V) Siliconix S-52883--Rev. C, 28-Apr-97 DG411/412/413 Typical Characteristics (Cont'd) V+ = 15 V V- = -15 V VL = 5 V TA = 25_C 20 10 rDS(on) - Drain-Source On-Resistance ( 35 30 I S , I D (pA) ID, IS Leakages vs. Temperature Leakage Current vs. Analog Voltage 40 ID(off) 0 IS(off) -10 ID(on) -20 -30 -40 -50 -60 -15 -10 -5 0 5 10 V+ = 15 V V- = -15 V VL = 5 V 30 125_C 25 85_C 20 25_C 15 -55_C 10 5 -15 15 -10 VD or VS -- Drain or Source Voltage (V) -5 0 5 10 15 VD - Drain Voltage (V) Charge Injection vs. Analog Voltage Charge Injection vs. Analog Voltage 100 140 V+ = 15 V V- = -15 V VL = 5 V 80 V+ = 15 V V- = -15 V VL = 5 V 120 100 CL = 10 nF 60 80 Q (pC) Q (pC) 40 CL = 10 nF 20 60 CL = 1 nF 40 20 0 0 CL = 1 nF -20 -20 -40 -40 -60 -60 -15 -10 -5 0 5 10 15 -15 -10 VS - Source Voltage (V) 3.5 5 10 15 Switching Time vs. Temperature 240 210 3.0 VL = 7.5 V 2.0 6.5 V 1.5 1.0 5.5 V 4.5 V 0.5 t ON , t OFF (ns) 180 2.5 VIN (V) 0 VD - Drain Voltage (V) Input Switching Threshold vs. Supply Voltage 0 (V+) 5 (V-) -5 -5 V+ = 15 V V- = -15 V VL = 5 V VS = 10 V 150 tON 120 tOFF 90 60 30 0 10 -10 15 -15 20 -10 Siliconix S-52883--Rev. C, 28-Apr-97 25 -5 30 0 35 0 40 0 -55 -35 -15 5 25 45 65 85 105 125 Temperature (_C) 5 DG411/412/413 Typical Characteristics (Cont'd) Supply Current vs. Input Switching Frequency Operating Voltage Range 42 40 V+ (V) 30 20 10 2 0 EEEEEEEE EEEEEEEE EEEEEEEE EEEEEEEE EEEEEEEE EEEEEEEE EEEEEEEE EEEEEEEE EEEEEEEE CMOS V+ VL 3 V + 10 100 mA SX 1 mA V- GND VL = 5 V CMOS Compatible TTL Compatible VIN = 0.8 V, 2.4 V -10 0 -20 V+ = 15 V V- = -15 V VL = 5 V = 1 SW = 4 SW 10 mA V+ DX VL I SUPPLY 50 I+, I- 100 mA 10 mA IL 1 mA 100 nA CMOS Compatible 10 nA -30 10 -40 100 1k 10 k 100 k 1M 10 M f - Frequency (Hz) V- - Negative Supply (V) Schematic Diagram (Typical Channel) V+ S VL V- Level Shift/ Drive VIN V+ GND D V- Figure 1. Test Circuits +5 V +15 V Logic Input 3V tr <20 ns tf <20 ns 50% 0V VL 10 V S V+ D IN GND V- tON VO RL 300 -15 V CL (includes fixture and stray capacitance) RL VO = VS RL + rDS(on) CL 35 pF Switch Input* VS Switch Output 0V Switch Input* VO -VS VO 90% tON 90% *VS = 10 V for tON, VS = -10 V for tOFF Note: Logic input waveform is inverted for switches that have the opposite logic sense control Figure 2. Switching Time 6 Siliconix S-52883--Rev. C, 28-Apr-97 DG411/412/413 Test Circuits (Cont'd) +5 V +15 V Logic Input VL VS1 VS2 V+ D1 S1 IN1 S2 VO2 Switch Output IN2 GND RL1 300 W V- RL2 300 W CL1 35 pF CL2 35 pF 50% 0V VS1 VO1 VO1 D2 3V Switch Output 90% 0V VS2 VO2 90% 0V tD tD -15 V CL (includes fixture and stray capacitance) Figure 3. Break-Before-Make (DG413) DVO Rg +5 V +15 V VL S V+ D VO INX IN Vg CL 10 nF 3V GND OFF ON OFF VO V- INX OFF ON Q = DVO x CL OFF INX dependent on switch configuration Input polarity determined by sense of switch. -15 V Figure 4. Charge Injection C +5 V VL S1 VS Rg = 50 W +15 V C V+ D1 50 W IN1 0V, 2.4 V NC 0V, 2.4 V S2 D2 IN2 GND XTALK Isolation = 20 log VO RL V- C VS VO -15 V C = RF bypass Figure 5. Crosstalk Siliconix S-52883--Rev. C, 28-Apr-97 7 DG411/412/413 Test Circuits (Cont'd) +5 V +15 V C C VL V+ S VS +5 V C VO D +15 V C VL Rg = 50 0V, 2.4 V V+ S RL 50 IN GND V- Meter IN C HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V D -15 V GND Off Isolation = 20 log V- C VS VO C = RF Bypass -15 V Figure 6. Off Isolation Figure 7. Source/Drain Capacitances Applications Single Supply Operation: Summing Amplifier The DG411/412/413 can be operated with unipolar supplies from 5 V to 44 V. These devices are characterized and tested for unipolar supply operation at 12 V to facilitate the majority of applications. In single supply operation, V+ is tied to VL and V- is tied to 0 V. See Input Switching Threshold vs. Supply Voltage curve for VL versus input threshold requirments. When driving a high impedance, high capacitance load such as shown in Figure 8, where the inputs to the summing amplifier have some noise filtering, it is necessary to have shunt switches for rapid discharge of the filter capacitor, thus preventing offsets from occurring at the output. R1 R2 VIN 1 C1 R5 R3 R4 - VIN 2 VOUT + C2 R6 DG413 Figure 8. Summing Amplifier 8 Siliconix S-52883--Rev. C, 28-Apr-97