CFY67 HiRel K-Band GaAs Super Low Noise HEMT * HiRel Discrete and Microwave Semiconductor * Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT * For professional super low-noise amplifiers * For frequencies from 500 MHz to > 20 GHz * Hermetically sealed microwave package * Super low noise figure, high associated gain * 4 3 1 2 Space Qualified ESA/SCC Detail Spec. No.: 5613/004, Type Variant No.s 01 to 04, 05 foreseen (tbc.) ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY67-06 (ql) Marking - Ordering Code Pin Configuration see below 1 2 3 4 G S D S Package Micro-X CFY67-08 (ql) CFY67-08P (ql) CFY67-10 (ql) CFY67-10P (ql) CFY67-nnl: specifies gain and output power levels (see electrical characteristics) (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1699 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702F1699 (see order instructions for ordering example) Semiconductor Group 1 of 9 Draft D, Jul. 98 CFY67 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 3.5 V Drain-gate voltage VDG 4.5 V Gate-source voltage (reverse / forward) VGS - 3... + 0.5 V Drain current ID 60 mA Gate forward current IG 2 mA PRF,in + 10 dBm Junction temperature TJ 150 C Storage temperature range Tstg - 65... + 150 C Ptot 200 mW Tsol 230 C Rth JS 515 (tbc.) K/W RF Input Power, C- and X-Band 2) Total power dissipation Soldering temperature 3) 1) Thermal Resistance Junction-soldering point Notes.: 1) For VDS 2 V. For V DS > 2 V, derating is required. 2) At TS = + 47 C. For TS > + 47 C derating is required. 3) During 15 sec. maximum. The same terminal shall not be resoldered unt il 3 minutes have elapsed. Semiconductor Group 2 of 9 Draft D, Jul. 98 CFY67 Electrical Characteristics (at TA=25C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V IDss 15 30 60 mA Gate threshold voltage VDS = 2 V, ID = 1 mA -VGth 0.2 0.7 2.0 V Drain current at pinch-off VDS = 1.5 V, VGS = - 3 V IDp - < 50 - A Gate leakage current at pinch-off VDS = 1.5 V, VGS = - 3 V -IGp - < 50 200 A Transconductance VDS = 2 V, ID = 15 mA gm15 50 65 - mS Gate leakage current at operation VDS = 2 V, ID = 15 mA -IG15 - < 0.5 2 A Thermal resistance junction to soldering point Rth JS - 450 - K/W Semiconductor Group 3 of 9 Draft D, Jul. 98 CFY67 Electrical Characteristics (continued) Parameter Symbol Values min. typ. Unit max. AC Characteristics Noise figure 1) VDS = 2 V, ID = 15 mA, f = 12 GHz NF dB CFY67-06 - 0.5 0.6 CFY67-08, -08P - 0.7 0.8 CFY67-10, 10P - 0.9 1.0 Associated gain. 1) VDS = 2 V, ID = 15 mA, f = 12 GHz Ga dB CFY67-06 11.5 12.5 - CFY67-08, -08P 11.0 11.5 - CFY67-10, 10P 10.5 11.0 - Output power at 1 dB gain compression VDS = 2 V, ID = 20 mA, f = 12 GHz 2) P1dB dBm CFY67-06, -08, -10 - 11.0 - CFY67-08P, -10P 10.0 11.0 - Notes.: 1) Noise figure / sssociated gain characteristics given for minimum noise figure matching conditions (fixed generic matching, no fine-tuning). 2) Output power characteristics given for optimum output power matching conditions (fixed generic matching, no fine-tuning). Semiconductor Group 4 of 9 Draft D, Jul. 98 CFY67 Typical Common Source S-Parameters f [GHz] 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 |S11| [magn] 0,963 0,938 0,913 0,889 0,865 0,844 0,823 0,800 0,779 0,761 0,743 0,725 0,708 0,690 0,673 0,656 0,640 0,625 0,611 0,597 0,586 0,576 0,564 0,554 0,547 0,536 0,529 0,522 0,517 0,510 0,505 0,502 0,499 0,498 0,498 0,498 <S11 [angle] -15 -23 -33 -42 -52 -62 -72 -81 -91 -100 -109 -117 -125 -132 -139 -146 -153 -160 -168 -175 177 169 161 154 146 139 131 124 116 108 99 91 82 74 68 62 Semiconductor Group CFY67-08: V DS = 2 V, I D = 15 mA, Z o = 50 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S 2 1 /S 1 2 MAG [magn] [angle] [magn] [angle] [magn] [angle] [magn] [dB] [dB] 5,315 165 0,0111 74 0,655 -14 0,40 26,8 5,182 159 0,0225 68 0,639 -18 0,39 23,6 5,060 150 0,0317 62 0,625 -23 0,42 22,0 4,940 142 0,0411 57 0,611 -28 0,43 20,8 4,824 133 0,0509 53 0,596 -35 0,43 19,8 4,715 124 0,0585 46 0,582 -41 0,45 19,1 4,591 115 0,0650 41 0,567 -47 0,47 18,5 4,450 107 0,0714 36 0,552 -53 0,50 17,9 4,319 99 0,0768 31 0,534 -60 0,52 17,5 4,183 91 0,0811 25 0,520 -66 0,54 17,1 4,043 83 0,0850 20 0,500 -72 0,58 16,8 3,906 75 0,0885 15 0,490 -77 0,60 16,4 3,769 68 0,0917 11 0,477 -83 0,63 16,1 3,640 61 0,0942 7 0,467 -88 0,67 15,9 3,529 54 0,0962 3 0,455 -93 0,71 15,6 3,427 48 0,0978 -1 0,442 -97 0,76 15,4 3,344 41 0,0998 -5 0,430 -101 0,79 15,3 3,271 34 0,1010 -9 0,417 -104 0,84 15,1 3,202 28 0,1027 -12 0,406 -108 0,87 14,9 3,143 21 0,1033 -16 0,393 -113 0,91 14,8 3,089 15 0,1044 -20 0,381 -118 0,94 14,7 3,041 8 0,1056 -24 0,370 -123 0,96 14,6 3,002 1 0,1068 -28 0,358 -129 0,98 14,5 2,960 -5 0,1070 -32 0,351 -134 1,01 14,4 13,8 2,923 -12 0,1076 -36 0,343 -140 1,03 14,3 13,3 2,886 -19 0,1076 -41 0,336 -146 1,06 14,3 12,7 2,848 -26 0,1081 -45 0,330 -151 1,09 14,2 12,4 2,815 -33 0,1087 -50 0,325 -156 1,11 14,1 12,1 2,787 -40 0,1087 -55 0,320 -161 1,13 14,1 11,9 2,765 -46 0,1093 -60 0,315 -167 1,14 14,0 11,7 2,751 -54 0,1090 -65 0,311 -172 1,16 14,0 11,6 2,735 -61 0,1090 -71 0,305 -177 1,18 14,0 11,4 2,719 -68 0,1091 -77 0,301 177 1,19 14,0 11,3 2,722 -75 0,1097 -82 0,297 172 1,19 13,9 11,3 2,741 -80 0,1103 -87 0,294 168 1,18 14,0 11,4 2,760 -84 0,1107 -90 0,290 165 1,17 14,0 11,5 5 of 9 Draft D, Jul. 98 CFY67 Typical Common Source S-Parameters (continued) f [GHz] 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 |S11| [mag] 0,962 0,937 0,913 0,889 0,860 0,834 0,810 0,784 0,761 0,740 0,720 0,701 0,682 0,663 0,644 0,627 0,611 0,595 0,581 0,567 0,556 0,546 0,537 0,528 0,520 0,513 0,506 0,498 0,492 0,489 0,484 0,485 0,485 0,485 0,487 0,490 <S11 [ang] -13 -22 -33 -41 -51 -61 -71 -80 -90 -99 -107 -116 -124 -131 -139 -148 -157 -165 -173 178 170 163 155 149 142 135 128 121 113 106 98 91 83 75 69 64 Semiconductor Group CFY67-06: V DS = 2 V, I D = 15 |S21| <S21 |S12| <S12 [mag] [ang] [mag] [ang] 6,112 166 0,0111 76 5,956 159 0,0211 69 5,810 150 0,0302 64 5,690 142 0,0394 58 5,522 133 0,0484 53 5,386 124 0,0567 48 5,236 116 0,0637 43 5,067 107 0,0702 38 4,911 99 0,0760 33 4,752 91 0,0809 28 4,586 84 0,0851 24 4,420 76 0,0889 19 4,260 69 0,0918 15 4,107 62 0,0941 11 3,974 55 0,0962 7 3,852 49 0,0980 3 3,747 42 0,0995 -1 3,659 35 0,1008 -5 3,571 29 0,1022 -9 3,497 22 0,1039 -13 3,430 16 0,1049 -17 3,368 9 0,1064 -21 3,317 3 0,1078 -26 3,265 -4 0,1093 -30 3,216 -10 0,1105 -35 3,169 -17 0,1116 -39 3,120 -24 0,1126 -44 3,080 -30 0,1137 -49 3,044 -37 0,1151 -54 3,014 -44 0,1160 -59 2,990 -51 0,1171 -65 2,967 -58 0,1185 -71 2,945 -65 0,1197 -77 2,947 -71 0,1206 -82 2,961 -77 0,1215 -87 2,979 -81 0,1230 -90 6 of 9 mA, Z o = 50 |S22| <S22 k-Fact. S 2 1 /S 1 2 MAG [mag] [ang] [mag] [dB] [dB] 0,539 -15 0,42 27,4 0,525 -19 0,42 24,5 0,511 -24 0,44 22,8 0,498 -30 0,46 21,6 0,484 -36 0,48 20,6 0,469 -43 0,50 19,8 0,456 -49 0,52 19,1 0,440 -55 0,55 18,6 0,423 -61 0,58 18,1 0,410 -67 0,60 17,7 0,397 -73 0,63 17,3 0,385 -79 0,66 17,0 0,373 -84 0,69 16,7 0,362 -89 0,73 16,4 0,351 -93 0,77 16,2 0,343 -98 0,80 15,9 0,333 -102 0,83 15,8 0,323 -107 0,86 15,6 0,313 -112 0,90 15,4 0,303 -116 0,92 15,3 0,293 -121 0,95 15,1 0,284 -127 0,98 15,0 0,274 -131 1,00 14,9 0,265 -135 1,02 14,8 13,8 0,255 -139 1,05 14,6 13,3 0,246 -143 1,07 14,5 12,9 0,235 -146 1,10 14,4 12,5 0,225 -150 1,12 14,3 12,2 0,215 -155 1,14 14,2 12,0 0,207 -159 1,15 14,1 11,8 0,200 -163 1,16 14,1 11,6 0,193 -167 1,17 14,0 11,5 0,187 -171 1,17 13,9 11,4 0,182 -175 1,17 13,9 11,4 0,177 -178 1,16 13,9 11,5 0,174 179 1,14 13,8 11,6 Draft D, Jul. 98 CFY67 Typical Common Source Noise-Parameters CFY67-08: f [GHz] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 V DS = 2 V, I D = 15 mA, Z o = 50 NF mi n Rn | o p t | < o p t [dB] [magn] [angle] [] 0,29 0,756 14 15,60 0,30 0,690 28 14,65 0,34 0,643 43 13,56 0,38 0,606 58 12,10 0,41 0,578 73 10,53 0,46 0,553 87 8,86 0,50 0,534 102 7,16 0,55 0,518 116 5,62 0,60 0,505 131 4,29 0,64 0,495 145 3,23 0,69 0,486 159 2,53 0,73 0,476 173 2,22 0,78 0,467 -173 2,37 0,84 0,455 -160 2,96 0,88 0,443 -146 4,01 0,93 0,428 -132 5,47 0,99 0,412 -118 7,26 1,05 0,394 -103 9,61 Semiconductor Group 7 of 9 Draft D, Jul. 98 CFY67 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Code: Q.......... CFY67 -(nnl) (ql) -(nnl) Noise Figure/Gain and/or Power Level (ql): Quality Level Ordering Example: Ordering Code: Q62702F1698 CFY67-08P ES For CFY67, Noise Figure/Gain/Power Level 08P: NF < 0.8 dB, G a > 11.0 dB, P 1dB > 10 dBm @ 12 GHz in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm - HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact also our marketing division : Tel.: Fax.: e-mail: Address: Semiconductor Group ++89 6362 4480 ++89 6362 5568 martin.wimmers@siemens-scg.com Siemens Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich 8 of 9 Draft D, Jul. 98 CFY67 Micro-X Package Published by Siemens Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Siemens AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). Semiconductor Group 9 of 9 Draft D, Jul. 98