IGP10N60T q TrenchStop(R) Series Low Loss IGBT in TrenchStop(R) and Fieldstop technology * * * * * * * * * * * Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time - 5s Designed for : - Variable Speed Drive for washing machines and air G conditioners - induction cooking - Uninterrupted Power Supply (R) TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behaviour NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGP10N60T C E PG-TO-220-3-1 VCE IC VCE(sat),Tj=25C Tj,max Marking Code Package 600V 10A 1.5V 175C G10T60 PG-TO-220-3-1 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current, limited by Tjmax IC Value 600 Unit V A TC = 25C 20 TC = 100C 10 Pulsed collector current, tp limited by Tjmax ICpul s 30 Turn off safe operating area - 30 VGE 20 V tSC 5 s Power dissipation TC = 25C Ptot 110 W Operating junction temperature Tj -40...+175 C Storage temperature Tstg -55...+175 VCE 600V, Tj 175C Gate-emitter voltage 2) Short circuit withstand time VGE = 15V, VCC 400V, Tj 150C Soldering temperature, 1.6mm (0.063 in.) from case for 10s 1 2) 260 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 http://store.iiic.cc/ Rev. 2.3 Sep. 07 IGP10N60T q TrenchStop(R) Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 1.35 K/W RthJA 62 Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 600 - - T j =2 5 C - 1.5 2.05 T j =1 7 5 C - 1.8 - 4.1 4.6 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A Collector-emitter saturation voltage VCE(sat) V V G E = 15 V , I C = 10 A Gate-emitter threshold voltage VGE(th) I C = 0. 3m A, V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V A T j =2 5 C - - 40 T j =1 7 5 C - - 1000 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 10 A - 6 - S Integrated gate resistor RGint none Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 551 - Output capacitance Coss V G E = 0V , - 24 - Reverse transfer capacitance Crss f= 1 MH z - 17 - Gate charge QGate V C C = 48 0 V, I C =1 0 A - 62 - nC pF V G E = 15 V Internal emitter inductance LE T O - 22 0- 3- 1 - 7 - nH IC(SC) V G E = 15 V ,t S C 5 s V C C = 4 0 0 V, T j = 25 C - 100 - A measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 http://store.iiic.cc/ Rev. 2.3 Sep. 07 IGP10N60T q TrenchStop(R) Series 3) Switching Characteristic , Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. typ. max. - 12 - - 8 - - 215 - - 38 - - 0.16 - - 0.27 - - 0.43 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 C , V C C = 40 0 V, I C = 1 0 A, V G E = 0/ 15 V , R G = 23 , 2) L =6 0 nH , 2) C = 4 0p F Energy losses include "tail" and diode reverse recovery. ns mJ 3) Switching Characteristic , Inductive Load, at Tj=175 C Parameter Symbol Conditions Value min. typ. max. - 10 - - 11 - - 233 - - 63 - - 0.26 - - 0.35 - - 0.61 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 2) 3) T j =1 7 5 C, V C C = 40 0 V, I C = 1 0 A, V G E = 0/ 15 V , R G = 2 3 2) L =6 0 nH , 2) C = 4 0p F Energy losses include "tail" and diode reverse recovery. ns mJ Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. Diode from device IKP10N60T Power Semiconductors 3 http://store.iiic.cc/ Rev. 2.3 Sep. 07 IGP10N60T q TrenchStop(R) Series t p=1s T C =80C 20A 15A T C =110C 10A Ic 5A 0A 10H z 5s 10A 25A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 30A 20s 100s 1A 500s 10ms Ic DC 100H z 1kHz 10kHz 0,1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 23) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V) 120W 30A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 100W 80W 60W 40W 20A 10A 20W 0W 25C 50C 75C 100C 125C 150C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C) Power Semiconductors 0A 25C 75C 125C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C) 4 http://store.iiic.cc/ Rev. 2.3 Sep. 07 IGP10N60T q TrenchStop(R) Series 30A 25A V GE =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 25A 30A 15V 20A 12V 10V 15A 8V 6V 10A 5A 12V 10V 15A 8V 6V 10A 0A 0V 1V 2V 3V 4V 0V 25A 20A 15A 10A T J = 1 75 C 5A 2 5C 0V 2V 4V 6V 8V 10 V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C) IC, COLLECTOR CURRENT 15V 20A 5A 0A 0A V GE =20V 3,0V IC =20A 2,5V IC =10A 2,0V 1,5V I C =5A 1,0V 0,5V 0,0V -50C 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 http://store.iiic.cc/ Rev. 2.3 Sep. 07 IGP10N60T q TrenchStop(R) Series t d(off) t d(off) 100ns t, SWITCHING TIMES t, SWITCHING TIMES 100ns tf t d(on) 10ns tf t d(on) 10ns tr tr 1ns 1ns 0A 5A 1 0A 15A 20A 10 IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 23, Dynamic test circuit in Figure E) 20 30 40 50 RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 10A, Dynamic test circuit in Figure E) t d(off) t, SWITCHING TIMES 100ns tf t d(on) 10ns tr VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 6V 4V m ax. typ. 5V m in. 3V 2V 1V 1ns 25C 50C 75C 100C 125C 15 0C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 10A, RG=23, Dynamic test circuit in Figure E) Power Semiconductors 0V -50C 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) 6 http://store.iiic.cc/ Rev. 2.3 Sep. 07 IGP10N60T q TrenchStop(R) Series *) E on and E ts include losses 1 ,0m J 0 ,8m J E off 0 ,6m J 0 ,4m J E on * 0 ,2m J 0 ,0m J 0A 5A 1 0A 0,8 mJ 0,6 mJ E off 0,4 mJ E on* 0,2 mJ 0,0 mJ 10 15A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 23, Dynamic test circuit in Figure E) 40 50 due to diode recovery E ts* 0,4mJ 0,3mJ E off 0,2mJ 0,1mJ 30 *) E on and E ts include losses due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 0,5mJ 20 RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 10A, Dynamic test circuit in Figure E) *) E on and E ts include losses 0,6mJ E ts * due to diode recovery E ts * d u e to d io de re c ov e ry E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) E on an d E ts in c lu d e lo s s es E on * 0,8m J 0,6m J E ts * 0,4m J E off 0,2m J E on * 0,0mJ 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 10A, RG = 23, Dynamic test circuit in Figure E) Power Semiconductors 0,0m J 300V 350V 400V 450V 500V 550V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 10A, RG = 23, Dynamic test circuit in Figure E) 7 http://store.iiic.cc/ Rev. 2.3 Sep. 07 IGP10N60T q TrenchStop(R) Series VGE, GATE-EMITTER VOLTAGE 1nF C iss 120V 10V 480V c, CAPACITANCE 15V 100pF C oss 5V C rss 0V 0nC 20nC 40nC 10pF 60nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=10 A) 0V 10V 20V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) 150A tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12s 125A 100A 75A 50A 25A 0A 12V 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C) Power Semiconductors 10s 8s 6s 4s 2s 0s 10V 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax<150C) 8 http://store.iiic.cc/ Rev. 2.3 Sep. 07 TrenchStop(R) Series IGP10N60T q ZthJC, TRANSIENT THERMAL RESISTANCE 0 10 K/W D =0.5 0.1 -1 10 K/W , (s) 6.53*10-2 8.33*10-3 7.37*10-4 7.63*10-5 R,(K/W) 0.2911 0.4092 0.5008 0.1529 0.2 R1 0.05 0.02 0.01 R2 C 1 = 1 /R 1 C 2 = 2 /R 2 single pulse -2 10 K/W 10s 100s 1ms 10ms 100ms tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 9 http://store.iiic.cc/ Rev. 2.3 Sep. 07 TrenchStop(R) Series IGP10N60T q PG-TO-220-3-1 Power Semiconductors 10 http://store.iiic.cc/ Rev. 2.3 Sep. 07 IGP10N60T q TrenchStop(R) Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics 1 2 r1 r2 n rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Power Semiconductors 11 http://store.iiic.cc/ Figure E. Dynamic test circuit Leakage inductance L =60nH an d Stray capacity C =40pF. Rev. 2.3 Sep. 07 TrenchStop(R) Series IGP10N60T q Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 9/12/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 http://store.iiic.cc/ Rev. 2.3 Sep. 07