MEDIUM POWER THYRISTORS Stud Version
50RIA SERIES
1
50 A
Bulletin I2401 rev. A 07/00
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50RIA
10 to 120 140 to 160
IT(AV) 50 50 A
@ TC94 90 °C
IT(RMS) 80 80 A
ITSM @ 50Hz 1430 1200 A
@ 60Hz 1490 1257 A
I2t@
50Hz 10.18 7.21 KA2s
@ 60Hz 9.30 6.58 KA2s
VDRM/VRRM 100 to 1200 1400 to 1600 V
tqtypical 110 µs
TJ- 40 to 125 °C
Parameters Units
Typical Applications
Phase control applications in converters
Lighting circuits
Battery charges
Regulated power supplies and temperature and
speed control circuit
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics
Case Style
TO-208AC (TO-65)
Features
High current rating
Excellent dynamic characteristics
dv/dt = 1000V/µs option
Superior surge capabilities
Standard package
Metric threads version available
Types up to 1600V VDRM/ VRRM
50RIA Series
2
Bulletin I2401 rev. A 07/00
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Voltage VDRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage (1) repetitive peak voltage (2) @ TJ = TJ max.
VVmA
10 100 150
20 200 300
40 400 500
60 600 700
50RIA 80 800 900 15
100 1000 1100
120 1200 1300
140 1400 1500
160 1600 1700
IT(AV) Max. average on-state current 50 50 A 180° sinusoidal conduction
@ Case temperature 94 90 °C
IT(RMS) Max. RMS on-state current 80 80 A
ITSM Max. peak, one-cycle 1430 1200 A t = 10ms No voltage
non-repetitive surge current 1490 1257 t = 8.3ms reapplied
1200 1010 t = 10ms 100% VRRM
1255 1057 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 10.18 7.21 KA2s t = 10ms No voltage Initial TJ = TJ max.
9.30 6.58 t = 8.3ms reapplied
7.20 5.10 t = 10ms 100% VRRM
6.56 4.65 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 101.8 72.1 KA2√s t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max.
VT(TO)1 Low level value of threshold 0.94 1.02 V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
VT(TO)2High level value of threshold 1.08 1.17 (π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ max.
voltage
rt1 Low level value of on-state 4.08 4.78 mΩ(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
slope resistance
rt2 High level value of on-state 3.34 3.97 (π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ max.
slope resistance
VTM Max. on-state voltage 1.60 1.78 V Ipk= 157 A, TJ = 25°C
IHMaximum holding current 200 mA TJ = 25°C. Anode supply 22V, resistive load,
Initial IT = 2A
ILLatching current 400 Anode supply 6V, resistive load
50RIA
10 to 120 140 to 160
Parameter Units Conditions
ELECTRICAL SPECIFICATIONS
Voltage Ratings
On-state Conduction
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs
(2) For voltage pulses with tp ≤ 5ms
50RIA Series
3
Bulletin I2401 rev. A 07/00
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dv/dt Max. critical rate of rise of 200 TJ = TJ max. linear to 100% rated VDRM
off-state voltage 500 (*) TJ = TJ max. linear to 67% rated VDRM
V/µs
Parameter 50RIA Units Conditions
Blocking
PGM Maximum peak gate power 10 TJ = TJ max, tp ≤ 5ms
PG(AV) Maximum average gate power 2.5
IGM Max. peak positive gate current 2.5 A
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT DC gate current required 250 TJ = - 40°C
to trigger 100 mA TJ = 25°C
50 TJ = 125°C
VGT DC gate voltage required 3.5 TJ = - 40°C
to trigger 2.5 V TJ = 25°C
10
W
V
20
Max. required gate trigger
current/voltage are the
lowest value which will trigger
all units 6V anode-to-cathode
applied
VGD DC gate voltage not to trigger 0.2 V TJ = TJ max
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Parameter 50RIA Units Conditions
TJ = TJ max
VDRM = rated voltage
IGD DC gate current not to trigger 5.0 mA
Triggering
di/dt Max. rate of rise of turned-on TC = 125°C, VDM = rated VDRM
current VDRM ≤ 600V 2 00 A/µs Gate pulse = 20V, 15Ω, tp = 6µs, tr = 0.1µs max.
VDRM ≤ 1600V 100 ITM = (2x rated di/dt) A
tdTypical delay time 0.9 TC = 25°C VDM = rated VDRM ITM = 10A dc resistive circuit
Gate pulse = 10V, 15Ω source, tp = 20µs
tqTypical turn-off time 110 TC = 125°C, ITM = 50A, reapplied dv/dt = 20V/µs
dir/dt = -10A/µs, VR=50V
Parameter 50RIA Units Conditions
Switching
µs
(*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 50RIA160S90.
50RIA Series
4
Bulletin I2401 rev. A 07/00
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TJMax. operating temperature range - 40 to 125 °C
Tstg Max. storage temperature range - 40 to 125 °C
RthJC Max. thermal resistance, 0.35 K/W DC operation
junction to case
RthCS Max. thermal resistance, 0.25 K/W Mounting surface, smooth, flat and greased
case to heatsink
T Mounting torque Min. 2.8 (25) Nm Non-lubricated threads
Max. 3.4 (30) (lbf-in)
wt Approximate weight 28 (1.0) g (oz)
Case style TO-208AC (TO-65) See Outline Table
Parameter 50RIA Units Conditions
Thermal and Mechanical Specification
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
180° 0.078 0.057 K/W TJ = TJ max.
120° 0.094 0.098
90° 0.120 0.130
60° 0.176 0.183
30° 0.294 0.296
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
Ordering Information Table
1
50 RIA 160 S90 M
Device Code
43
2
1- Current code
2- Essential part number
3- Voltage code: Code x 10 = VRRM (See Voltage Rating Table)
4- Critical dv/dt: None = 500V/µs (Standard value)
S90 = 1000V/µs (Special selection)
5- None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A
M = Stud base TO-208AC (TO-65) M6 X 1
5
50RIA Series
5
Bulletin I2401 rev. A 07/00
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Outline Table
Fig. 1 - Current Ratings Characteristic
90
100
110
120
130
0 102030405060
30° 60° 90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Angle
50RIA Series (100V to 1200V)
R (DC) = 0.35 K/W
thJC
80
90
100
110
120
130
0 1020304050607080
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
50RIA Series (100V to 1200V)
R (DC) = 0.35 K/W
thJC
Fig. 2 - Current Ratings Characteristic
Case Style TO-208AC (TO-65)
All dimensions in millimeters (inches)
50RIA Series
6
Bulletin I2401 rev. A 07/00
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Fig. 3 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 4 - On-state Power Loss Characteristics
0
10
20
30
40
50
60
70
80
0 1020304050
RMS Limit
Conduction Angle
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
50RIA Series
(100V to 1200V)
T = 125°C
J
0
10
20
30
40
50
60
70
80
90
100
0 1020304050607080
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
50RIA Series
(100V to 1200V)
T = 125°C
J
600
700
800
900
1000
1100
1200
1300
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
50RIA Series
(100V to 1200V)
500
600
700
800
900
1000
1100
1200
1300
1400
1500
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
50RIA Series
(100V to 1200V)
Fig. 8 - Current Ratings CharacteristicsFig. 7 - Current Ratings Characteristics
80
90
100
110
120
130
0 5 10 15 20 25 30 35 40 45 50 5
5
30° 60° 90° 120°
180°
Average On-state Current (A)
Maxi mum Al l owab le Ca se Tempe ra t ure (° C)
Conduction Angle
50RIA Series (1400V to 1600V)
R (DC) = 0.35 K/W
thJC
80
90
100
110
120
130
0 102030405060708090
DC30° 60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
50RIA Series (1400V to 1600V)
R (DC) = 0.35 K/W
thJC
50RIA Series
7
Bulletin I2401 rev. A 07/00
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Fig. 14 - Forward Voltage Drop Characteristics
Fig. 9 - On-state Power Loss Characteristics
Fig. 11 - Maximum Non-Repetitive Surge Current Fig. 12 - Maximum Non-Repetitive Surge Current
Fig. 10 - On-state Power Loss Characteristics
0
10
20
30
40
50
60
70
80
90
0 5 10 15 20 25 30 35 40 45 50
RMS Limit
Conduction Angle
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
50RIA Series
(1400V to 1600V)
T = 125°C
J
0
10
20
30
40
50
60
70
80
90
100
110
120
0 1020304050607080
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
50RIA Series
(1400V to 1600V)
T = 125°C
J
500
600
700
800
900
1000
1100
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
50RIA Series
(1400V to 1600V)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
400
500
600
700
800
900
1000
1100
1200
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
50RIA Series
(1400V to 1600V)
Fig. 13 - Forward Voltage Drop Characteristics
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
50RIA Series (1400V to 1600V)
T = 125°C
J
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
50RIA Series (100V to 1200V)
50RIA Series
8
Bulletin I2401 rev. A 07/00
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Fig. 15 - Thermal Impedance ZthJC Characteristics
Fig. 16 - Gate Characteristics
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJ-hs
Steady State Value
R = 0.35 K/W
thJ-hs
Transient Thermal Impedance Z (K/W)
50RIA Series
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
VGD
IGD
(b) (a)
Tj=25 °C
Tj=-40 °C
(1) (2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
tr<=1 µs
Rectangular gate pulse
rated di/dt : 20V, 30 ohms; tr<=0.5 µs
<=30% rated di/dt : 20V, 65 ohms
(1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 2.5ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500µs
(3) (4)
Tj=125 °C
50RIA Series Frequency Limited by PG(AV)
