re Discrete POWER & Signal FAIRCHILD Technologies es SEMICONDUCTOR m SOT-23 B Mark: DG PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. Absol ute Maxi mum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VcEo Collector-Emitter Voltage 45 Vv Voso Collector-Base Voltage 60 Vv Veo Emitter-Base Voltage 5.0 Vv Io Collector Current - Continuous 800 mA Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol Characteristic Max Units *BCW68C Pp Total Device Dissipation 350 mW Derate above 25C 2.8 mWw/C Resa Thermal Resistance, Junction to Ambient 357 C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 41997 Fairchild Semiconductor Corporation 89M Electrical Characteristics PNP General Purpose Amplifier TA = 25C unless otherwise noted (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Vieryceo Collector-Emitter Breakdown Voltage lo = 10 mA, lz =0 45 Vv Vieryces Collector-Base Breakdown Voltage lc =10 yA 60 Vv Vierycso0 Collector-Base Breakdown Voltage Io = 100 pA, Iz = 0 60 Vv Visr)eso Emitter-Base Breakdown Voltage le=10pA, Ip =0 5.0 Vv loes Collector-Cutoff Current Voe = 45 V 20 nA Vor = 45 V, Ta= 150C 10 uA leBo Emitter-Cutoff Current Vep=4.0V 20 nA ON CHARACTERISTICS hee DC Current Gain lo =10mMA, Voge = 1.0 V 120 Io = 100 mA, Vog = 1.0 V 160 400 lo = 300 mA, Voce =10V 60 VeeEsat) Collector-Emitter Saturation Voltage Ic = 300 mA, Ig = 30 MA 1.5 Vv Veesaty Base-Emitter Saturation Voltage lo = 500 mA, Ip = 50 mA 2.0 Vv SMALL SIGNAL CHARACTERISTICS fr Current Gain - Bandwidth Product Io = 20 mA, Voge = 10 V, 100 MHz f = 100 MHz Cobo Ouput Capacitance Vop = 10 V, le = 0, f = 1.0 MHz 18 pF Cibo Input Capacitance Veg = 0.5 V, le = 0, f = 1.0 MHz 105 pF NF Noise Figure lo = 0.2 MA V, Voe = 5.0 V, 10 dB Rg = 1.0 kQ, f = 1.0 kHz, By = 200 Hz Typical Characteristics nN wo & ao o o Qo Qo Oo Oo Oo Oo Qo Oo h,_ - TYPICAL PULSED CURRENT GAIN of Typical Pulsed Current Gain vs Collector Current 0.3 1 3 10 30 100 Ic - COLLECTOR CURRENT (mA) 300 Collector-Emitter Saturation Voltage vs Collector Current a B =10 o a ip wo B o Veegar7 COLLECTOR EMITTER VOLTAGE (V) - 40C 100 I,- COLLECTOR CURRENT (mA) 500 89M PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Base-Emitter Saturation Voltage vs Collector Current e n o io Veesar BASE EMITTER VOLTAGE (V) a o 10 100 500 |- COLLECTOR CURRENT (mA) Collector-Cutoff Current vs. Ambient Temperature Vop= 35V Icao- COLLECTOR CURRENT (nA) 25 50 75 100 125 T,: AMBIENT TEMPERATURE (C) Vecon - BASE EMITTER ON VOLTAGE (V) CAPACITANCE (pF) a e n o io Base Emitter ON Voltage vs Collector Current Voce =5V 1 10 25 | - COLLECTOR CURRENT (mA) of Input and Output Capacitance vs Reverse Bias Voltage -0.1 -1 -10 REVERSE BIAS VOLTAGE (V) - 50 Power Dissipation vs Ambient Temperature P,,- POWER DISSIPATION (mW) a a & & 8 & oO oO oO oO oO oO oO oO 0 25 50 75 100 TEMPERATURE (C) 125 150 89M TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT qs FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.