Order this document by BD777/D SEMICONDUCTOR TECHNICAL DATA ! . . . designed for general purpose amplifier and high-speed switching applications. * High DC Current Gain hFE = 1400 (Typ) @ IC = 2.0 Adc * Collector-Emitter Sustaining Voltage -- @ 10 mAdc VCEO(sus) = 45 Vdc (Min) -- BD776 VCEO(sus) = 60 Vdc (Min) -- BD777, 778 VCEO(sus) = 80 Vdc (Min) -- BD780 * Reverse Voltage Protection Diode * Monolithic Construction with Built-in Base-Emitter output Resistor *Motorola Preferred Device IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII DARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45, 60, 80 VOLTS 15 WATTS MAXIMUM RATINGS Rating Symbol BD776 BD777 BD778 BD780 Unit VCEO VCB 45 60 80 Vdc 45 60 80 Vdc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Peak Base Current Total Device Dissipation TC = 25_C - Derate above 25_C Operating and Storage Junction Temperature Range VEB IC 5.0 Vdc 4.0 6.0 Adc IB PD 100 mAdc 15 0.12 Watts W/_C - 65 to + 150 _C TJ, Tstg CASE 77-08 TO-225AA TYPE THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case RJC 8.34 _C/W Thermal Resistance, Junction to Ambient RJA 83.3 _C/W 16 1.6 12 1.2 8.0 0.8 4.0 0.4 0 20 40 60 80 100 120 140 TA PD, POWER DISSIPATION (WATTS) PD, POWER DISSIPATION (WATTS) Characteristics 0 160 T, TEMPERATURE (C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 45 60 80 -- -- -- Vdc -- -- -- 100 100 100 -- -- 1.0 100 IEBO -- 1.0 HFE VCE(Sat) VBE(Sat) 750 -- -- 1.5 Vdc -- 2.5 Vdc VBE(On) VEC -- 2.3 Vdc -- 2.0 Vdc fT Symbol 20 -- MHz OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IO = 10 mAdc, IB = 0) BD776 BD777, BD778 BD780 Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) Collector Cutoff Current (VCB = Rated, VCEO(sus), IE = 0) (VCB = Rated, VCEO(sus), IE = 0, IC = 100C) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Adc ICEO BD776 BD777, BD778 BD780 Adc ICBO Adc ON CHARACTERISTICS DC Current Gain (IC = 2.0 Adc, VCE = 3.0 Vdc) Collector-Emitter Saturation Voltage (IC = 1.5 Adc, IB = 6 mAdc) Base Emitter Saturation Voltage (IC = 1.5 Adc, IB = 6 mAdc) Base-Emitter On Voltage (IC = 1.5 Adc,VCE = 3 Vdc) Output Diode Voltage Drop (IEC = 2.0 Adc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 1.0 Adc, VCE = 2.0 Vdc) Min Typ Unit Turn-On Time (IC = 250 mA/VCE = 2 V) BD775-777 BD776-778-780 ton -- -- 250 150 ns Turn-Off Time (IC = 250 mA, VCE = 2 V) BD775-777 BD776-778-780 toff -- -- 600 400 ns 5.0 1.0 ms 5.0 ms TJ = 150C 1.0 0.1 0.05 dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECONDARY BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.01 1.0 2.0 50 70 3.0 5.0 7.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Active Region Safe Operating Area PNP BD776 BD778 BD780 COLLECTOR BASE 1500 1000 BD776, 778, 780 700 500 400 300 TJ = 25C VCE = 2.0 Vdc 200 BD775, 776 BD777, 778 BD780 0.02 777 2000 500 s 2.0 0.5 3000 100 s hFE , DC CURRENT GAIN IC, COLLECTOR CURRENT (AMP) 10 100 100 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 3.0 4.0 5.0 Figure 3. Typical DC Current Gain NPN BD777 BD779 COLLECTOR BASE [ 150 [ 150 EMITTER EMITTER Figure 4. Darlington Circuit Schematic 2 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M DIM A B C D F G H J K M Q R S U V 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. 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