BFR360L3 NPN Silicon RF Transistor* * Low voltage/ Low current operation * For low noise amplifiers 3 * For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 * Low noise figure: 1.0 dB at 1.8 GHz *Short-term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR360L3 Marking FB Pin Configuration 1=B 2=E 3=C Package TSLP-3-1 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 35 Base current IB 4 Total power dissipation1) Ptot 210 mW Junction temperature Tj 150 C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 V mA TS 104C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 220 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 2005-10-17 BFR360L3 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)CEO 6 9 - V ICES - - 10 A ICBO - - 100 nA IEBO - - 1 A hFE 90 120 160 DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain- - IC = 15 mA, VCE = 3 V, pulse measured 2 2005-10-17 BFR360L3 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 11 14 - Ccb - 0.26 0.4 Cce - 0.15 - Ceb - 0.42 - GHz IC = 15 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F min IC = 3 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz - 1 - IC = 3 mA, VCE = 3 V, ZS = ZSopt, f = 3 GHz - 1.3 - - 16 - - 11.5 - Power gain, maximum available1) G ma IC = 15 mA, VCE = 3 V, Z S = ZSopt , ZL = ZLopt , f = 1.8 GHz IC = 15 mA, VCE = 3 V, Z S = ZSopt , ZL = ZLopt , f = 3 GHz |S 21e|2 Transducer gain dB IC = 15 mA, VCE = 3 V, Z S = ZL = 50 , f = 1.8 GHz - 13.5 - f = 3 GHz - 9 - IP 3 - 24 - P-1dB - 9 - Third order intercept point at output2) dBm VCE = 3 V, I C = 15 mA, Z S=ZL=50 , f = 1.8 GHz 1dB Compression point at output IC = 15 mA, VCE = 3 V, Z S=ZL=50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3 2005-10-17 BFR360L3 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 0.0689 20 2.4 60 1.4 7.31 400 9.219 1.336 0.864 1.92 0 0 fA V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = KF = V fF ps mA V ns - 1 147 77.28 6 0.3 0.1 78.2 1.3 0.115 0 0.486 0 0 0.954 1E-14 mA A m V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = NK = 1 150 1 20 74 0.35 0.5 0.198 473 0.129 0.75 1.11 0.5 fA fA A L1 = L2 = L3 = C1 = C2 = C3 = C4 = C5 = C6 = C7 = R1 = 0.575 0.575 0.275 33 28 131 8 8 24 300 204 nH nH nH fF fF fF fF fF fF fF V fF V eV K All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: C4 C7 C1 L2 B Transistor Chip B' C' R1 L3 C E' C6 C2 L1 C5 C3 Valid up to 6GHz E EHA07536 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes 4 2005-10-17 BFR360L3 Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 10 3 240 mW k/W RthJS Ptot 180 150 10 2 120 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 90 60 30 0 0 15 30 45 60 75 90 105 120 C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 TS s 10 0 tp Permissible Pulse Load Collector-base capacitance Ccb= (VCB) Ptotmax/P totDC = (tp) f = 1MHz 10 1 0.8 Ptotmax /PtotDC pF 0.6 Ccb D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.5 0.4 0.3 0.2 0.1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 2 4 6 8 10 12 V 16 VCB 5 2005-10-17 BFR360L3 Third order Intercept Point IP3=(IC) Transition frequency fT = (IC) (Output, ZS=ZL=50) f = 1 GHz VCE = parameter, f = 1.8 GHz VCE = parameter 30 18 GHz dBm 14 5V 20 3V fT IP3 12 15 10 6V 4V 3V 2V 1V 10 5 2V 8 1V 6 0.7V 4 0 -5 0 2 5 10 15 20 25 mA 30 0 0 40 5 10 15 20 25 30 IC A 40 IC Power gain Gma, Gms = (IC) VCE = 3 V Power gain Gma, Gms = (IC) f = 1.8GHz f = parameter in GHz VCE = parameter 24 18 dB 0.9GHz dB 20 5V 18 G G 3V 16 14 2V 1.8GHz 14 2.4GHz 12 12 3GHz 10 1V 4GHz 8 10 6 4 0 0.7V 5 10 15 20 25 30 35 dB 8 0 45 IC 5 10 15 20 25 30 mA 40 IC 6 2005-10-17 BFR360L3 Power Gain Gma, Gms = (f) Power Gain |S21| = (f) VCE = parameter VCE = parameter 50 40 dB dB Ic=15mA Ic = 15mA 40 30 30 |S21|2- G 35 5V 2V 1V 0.7V 25 5V 2V 1V 0.7V 25 20 20 15 15 10 10 5 5 0 0 1 2 3 4 GHz 0 0 6 f 1 2 3 4 GHz 6 f Power Gain Gma, Gms = (VCE): f = parameter 24 dB Ic = 15mA 0.9GHz 20 18 G 1.8GHz 16 14 2.4GHz 12 3GHz 10 4GHz 8 6 4 0 1 2 3 4 V 6 VCE 7 2005-10-17 Package TSLP-3-1 BFR360L3 Package Outline Bottom view 0.4 +0.1 0.6 0.05 0.5 0.035 2 1 0.05 3 0.65 0.05 3 1) 2 1 1) 0.05 MAX. 0.35 0.05 Pin 1 marking 2 x 0.15 0.035 2 x 0.25 0.035 1 0.25 0.035 1) Top view 1) 1) Dimension applies to plated terminal Foot Print R0.1 0.2 0.225 0.2 0.225 0.315 0.35 1 0.3 0.945 0.35 0.45 0.275 0.6 0.355 For board assembly information please refer to Infineon website "Packages" 0.17 0.15 Copper Solder mask Stencil apertures Marking Layout Type code BFR193L3 Laser marking Pin 1 marking Example Standard Packing Reel o180 mm = 15.000 Pieces/Reel 0.5 1.16 Pin 1 marking 8 4 0.76 8 2005-10-17 BFR360L3 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. 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