2005-10-17
1
BFR360L3
2
3
1
NPN Silicon RF Transistor*
• Low voltage/ Low current operation
• For low noise amplifiers
• For Oscillators up to 3.5 GHz and Pout > 10 dBm
• Low noise figure: 1.0 dB at 1.8 GHz
*Short-term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR360L3 FB 1 = B 2 = E 3 = C TSLP-3-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 6 V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 2
Collector current IC35 mA
Base current IB4
Total power dissipation1)
TS ≤ 104°C Ptot 210 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS ≤ 220 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
2005-10-17
2
BFR360L3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 6 9 - V
Collector-emitter cutoff current
VCE = 15 V, VBE = 0 ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0 ICBO - - 100 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0 IEBO - - 1 µA
DC current gain-
IC = 15 mA, VCE = 3 V, pulse measured hFE 90 120 160 -
2005-10-17
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BFR360L3
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 15 mA, VCE = 3 V, f = 1 GHz fT11 14 - GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.26 0.4 pF
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.15 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.42 -
Noise figure
IC = 3 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz
IC = 3 mA, VCE = 3 V, ZS = ZSopt, f = 3 GHz
Fmin
-
-
1
1.3
-
-
dB
Power gain, maximum available1)
IC = 15 mA, VCE = 3 V, ZS = ZSopt ,
ZL = ZLopt , f = 1.8 GHz
IC = 15 mA, VCE = 3 V, ZS = ZSopt ,
ZL = ZLopt , f = 3 GHz
Gma
-
-
16
11.5
-
-
Transducer gain
IC = 15 mA, VCE = 3 V, ZS = ZL = 50Ω ,
f = 1.8 GHz
f = 3 GHz
|S21e|2
-
-
13.5
9
-
-
dB
Third order intercept point at output2)
VCE = 3 V, IC = 15 mA, ZS=ZL=50 Ω, f = 1.8 GHz IP3- 24 - dBm
1dB Compression point at output
IC = 15 mA, VCE = 3 V, ZS=ZL=50 Ω, f = 1.8 GHz P-1dB - 9 -
1Gma = |S21e / S12e| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
2005-10-17
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BFR360L3
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
NF = 1-
ISE = 150 fA
NR = 1-
ISC = 20 fA
IRB = 74 µA
RC = 0.35 Ω
MJE = 0.5 -
VTF = 0.198 V
CJC = 473 fF
XCJC = 0.129 -
VJS = 0.75 V
EG = 1.11 eV
NK = 0.5 K
IS = 0.0689 fA
VAF = 20 V
NE = 2.4 -
VAR = 60 V
NC = 1.4 -
RBM = 7.31 Ω
CJE = 400 fF
TF = 9.219 ps
ITF = 1.336 mA
VJC = 0.864 V
TR = 1.92 ns
MJS = 0-
XTI = 0-
AF = 1 -
BF = 147 -
IKF = 77.28 mA
BR = 6 -
IKR = 0.3 A
RB = 0.1 Ω
RE = 78.2 mΩ
VJE = 1.3 V
XTF = 0.115 -
PTF = 0 deg
MJC = 0.486 -
CJS = 0 fF
XTB = 0 -
FC = 0.954
KF = 1E-14
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit: L1 = 0.575 nH
L2 = 0.575 nH
L3 = 0.275 nH
C1 = 33 fF
C2 = 28 fF
C3 = 131 fF
C4 = 8fF
C5 =8fF
C6 = 24 fF
C7 = 300 fF
R1 = 204 Ω
EHA07536
Transistor C' L
E'
B'
3
4
C
C
Chip
E
L
1
5
C
B
2
L
C
6
C
1
C
2
C
3
C
7
R
1
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
Valid up to 6GHz
2005-10-17
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BFR360L3
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
mW
240
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
1
10
2
10
3
10
k/W
RthJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
Ptotmax/PtotDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 2 4 6 8 10 12 V16
VCB
0
0.1
0.2
0.3
0.4
0.5
0.6
pF
0.8
Ccb
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BFR360L3
Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50Ω)
VCE = parameter, f = 1.8 GHz
0 5 10 15 20 25 30 mA 40
IC
-5
0
5
10
15
20
dBm
30
IP3
6V
4V
3V
2V
1V
Transition frequency fT= ƒ(IC)
f = 1 GHz
VCE = parameter
0 5 10 15 20 25 30 A40
IC
0
2
4
6
8
10
12
14
GHz
18
fT
5V
3V
2V
1V
0.7V
Power gain Gma, Gms = ƒ(IC)
VCE = 3 V
f = parameter in GHz
0 5 10 15 20 25 30 35 dB 45
IC
4
6
8
10
12
14
16
18
20
dB
24
G
0.9GHz
1.8GHz
2.4GHz
3GHz
4GHz
Power gain Gma, Gms = ƒ(IC)
f = 1.8GHz
VCE = parameter
0 5 10 15 20 25 30 mA 40
IC
8
10
12
14
dB
18
G
5V
3V
2V
1V
0.7V
2005-10-17
7
BFR360L3
Power Gain Gma, Gms = ƒ(f)
VCE = parameter
01234GHz 6
f
0
5
10
15
20
25
30
35
40
dB
50
G
Ic=15mA
5V
2V
1V
0.7V
Power Gain |S21|² = ƒ(f)
VCE = parameter
01234GHz 6
f
0
5
10
15
20
25
30
dB
40
|S21| -
2
Ic = 15mA
5V
2V
1V
0.7V
Power Gain Gma, Gms = ƒ(VCE):
f = parameter
01234V6
VCE
4
6
8
10
12
14
16
18
20
dB
24
G
0.9GHz
1.8GHz
2.4GHz
3GHz
4GHz
Ic = 15mA
2005-10-17
8
BFR360L3
Package TSLP-3-1
2
3
1
0.4
+0.1
Type code
Laser marking
Example
BFR193L3
Pin 1
marking
0.76
4
1.16
0.5
Pin 1
marking
8
Reel ø180 mm = 15.000 Pieces/Reel
For board assembly information please refer to Infineon website "Packages"
Package Outline
Foot Print
Marking Layout
Standard Packing
Stencil aperturesCopper Solder mask
0.275
0.2
0.315
0.945
0.45
0.17
0.355
0.2
0.35
0.225
1
0.6
0.225
0.15
0.35 0.3
R0.1
1
2
±0.05
0.35
±0.035
2x0.15
1)
Top view Bottom view
1) Dimension applies to plated terminal
±0.035
0.5
1) ±0.05
0.6
3
±0.05
0.65
±0.035
2x
0.25
1)
±0.035
0.25
1)
1
±0.05
Pin 1
marking
0.05 MAX.
2005-10-17
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BFR360L3
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
