iAMOSPEC SILICON NPN POWER TRANSISITORS Toe , TEMPERATURE(C) NPN ... designed for medium-speed switching and amplifier applications 2N3713 FEATURES Thru * Gain Ranged Specified at 1A and 3A. 2N3716 * Low Veg, sat)? typically 0.5 V @ I,=5A, I,=0.5A * Excellent Safe Operating Areas * Complementary PNP Types Available 2N3789 thru 2N3792 10 AMPERE POWER TRANSISTORS MAXIMUM RATINGS NPN SILICON 60-80 VOLTS Characteristic Symbol | 2N3713 | 2N3714 | Unit 150 WATTS 2N3715 2N3716 Collector-Base Voltage Veso 80 100 V Collector-Emitter Voltage Veco 60 80 Vv Emitter-Base Voltage Veso 7 V Collector Current - Continuous lc 10 A Base Current-Continuous ls 4 A Total Power Dissipation @T,=25C Py 150 Ww Derate above 25C 0.857 wc Operating and Storage Junction Ty Teste C Temperature Range -65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case R jc 1.17 CAN PIN 1.BASE 2.EMNTER COLLECTOR(CASE) FIGURE -1 POWER DERATING 150 MILLIMETERS a DIM MIN MAX E125 $ NY A | 38.75 | 3096 % 100 hs B | 19.28 | 22.23 Q NY Cc 796 | 9.28 & 75 ~ D 11.18 | 12.19 8 N E | 25.20 | 2667 50 IN F 0.92 | 1.09 S G 1.38 1.62 $ 25 IN H | 29.90 | 30.40 : | 16.64 | 17.30 a O J 3.88 436 0 2 50 75 100 12 150 175 200 K_ | 10.67 | 11.182N3713 Thru 2N3716 NPN ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) 2N3713, 2N3715 | Vogo (sus) 60 Vv (I,= 200 mA, I,= 0) 2N3714, 2N3716 80 Collector -Emitter Cutoff Current loex mA (Veg= 80 V, Vegicm = -1-5V ) 2N3713, 2N3715 1.0 (Veg= 100 V, Vege = -1-5V ) 2N3714, 2N3716 1.0 (Veg= 60 V, Vector -1-5V, T= 150C ) 2N3713, 2N3715 10 (Vee= 80 V, Vegiom= -1-5V. T= 150C ) 2N3714, 2N3716 10 Emitter Cutoff Current leno mA (Vep= 7.0 V, 1, =0) Ail Types 5.0 ON CHARACTERISTICS (1) DC Current Gain hFE (1g= 1.0 A, Veg= 2.0 V ) 2N3713, 2N3714 25 90 2N3715, 2N3716 50 180 (Ig= 3.0 A, Veg= 2.0 V ) 2N3713, 2N3714 15 2N3715, 2N3716 30 Collector-Emitter Saturation Voltage Voeisat) V (I,= 5.0 A, I,= 0.5 A) 2N3713, 2N3714 1.0 2N3715, 2N3716 0.8 Base-Emitter Saturation Voltage VeE(sat) V (1,= 5.0 A, 1,= 0.5 A) 2N3713, 2N3714 2.0 2N3715, 2N3716 1.5 Base-Emitter On Voltage Veejon) Vv (1,= 3.0 A, Vog= 2.0 V ) All Types 1.5 DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product f, MHz ( lp= 500 mA,Ve_= 10 V, f = IMHz) 4.0 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% (2) f, = {hy | F ost2N3713 thru 2N3716 NPN TT 2N3713,2N3715 2N3714,2N3716 ACTIVE REGION SAFE OPERATING AREA ACTIVE REGION SAFE OPERATING AREA 00 us I 250 us | DC to 5 ms 50 us IC , COLLECTOR CURRENT (Amp) IC , COLLECTOR CURRENT (Amp) 0 10 20 30 40 50 60 70 0 10 20 30 40:8 8 7 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) COLLECTOR SATURATION REGION TYPICAL SWITCHING TIME = = @ Tys25C ts a 6 1 ] 3 <1 3 > ~ w 3 w Wu E 2 = FE lu - ii . 2 FE 0. ud al a 9 oO 1 2030 ~=80 70 100 200 500 700 1k 2k of o2 03 08 0710 200 30 50 is, BASE CURRENT (mA) Ic, COLLECTOR CURRENT (AMP) DC CURRENT GAIN DC CURRENT GAIN oS, 2N3713,2NG714 Tyet76 C z z 3 3 E Eb z 4 Wu Ww we x a x 2 >? oO Oo Oo Q a a o F; 0 0 oA 02 03 05 07 10 2 3 # 7 410 O41 02 03 05 07 10 2.3 #5 7 1 Ic , COLLECTOR CURRENT (AMP) Ic , COLLECTOR CURRENT (AMP)