CLA 100 PD 1200 N
A
advanced
V = V
kA²s
kA²s
kA²s
kA²s
High Efficiency Thyristor
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
R/D
V
IA
V
T
1.27
R0.35 K/W
R/D
4 3 21
min.
100
Applications:
V
RSM/DSM
V1300
50T = 25°C
VJ
T = °C
VJ
mA10
Package:
Part number
V = V
R/D
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
350 WT = 25°C
C
T
VJ
150 °C-40
V
I
RRM
=
=
1200
157
100
CLA 100 PD 1200 NA
V
A
1200
max. non-repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
virtual junction temperature
total power dissipation
Conditions Unit
1.55
T = 25°C
VJ
125
V
T0
V0.83T = °C
VJ
150
r
T
3.7 mΩ
V1.21T = °C
VJ
I = A
T
V
100
1.58
I = A
T
200
I = A
T
200
threshold voltage
slope resistance for power loss calculation only
Backside: isolated
= 100 A
● Housing:
Phase leg
SOT-227B (minibloc)
●
rIndustry standard outline
●
rCu base plate internal DCB isolated
●
rIsolation Voltage 3000 V
●
rEpoxy meets UL 94V-0
●
rRoHS compliant
µA
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
125
V
RRM/DRM
V1200
max. repetitive reverse/forward blocking voltage T = 25°C
VJ
IA157
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
25
j
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = °C
VJ
45
max. forward surge current
T = °C
VJ
150
I²t T = °C45
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
I
1.50
1.62
8.13
7.87
kA
kA
kA
kA
1.28
1.38
11.3
10.9
1200
300 µs
RMS forward current
T
(
RMS
)
T(RMS)
T(AV)M
180° sine
T
(
AV
)
M
average forward current
IXYS reserves the right to change limits, conditions and dimensions. 20100323
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
CLA 100 PD 1200 N
A
advanced
(di/dt)
cr
A/µ
s
150
repetitive, I =
T
VJ
=150°C
critical rate of rise of current
V
GT
gate trigger voltage V= 6 V T = °C25
(dv/dt) T=150°C
critical rate of rise of voltage
A/µ
s
500
V/µ
s
f = 50 Hz; t = 200 µs
IA;
V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
Symbol Definition Ratings
typ. max.min.Conditions Uni
t
150 A
T
P
G
= 0.5 di /dt A/µs
G
=0.5
DDRM
cr
V = ⅔ V
D DRM
GK
1000
1.5
V
T= °C-40
VJ
I
GT
gate trigger current V= 6 V T = °C25
DVJ
50 m
A
T= °C-40
VJ
1.6
V
100 m
A
V
GD
gate non-trigger voltage T= °C
VJ
0.2
V
I
GD
gate non-trigger current 5m
A
V = ⅔ V
D DRM
150
latching current T= °C
VJ
150 m
A
I
L
25tµs
p
=10
IA;
G
= 0.5 di /dt A/µs
G
=0.5
holding current T= °C
VJ
100 m
A
I
H
25V= 6 V
D
R = ∞
GK
gate controlled delay time T= °C
VJ
2µ
s
t
gd
25
IA;
G
= 0.5 di /dt A/µs
G
=0.5
V = ½ V
D DRM
turn-off time T= °C
VJ
150 µ
s
t
q
di/dt = A/µs;10 dv/dt = V/µs20
V =
R
100 V; I A
T
= 100
V = ⅔ V
D DRM
tµs
p
=200
non-repetitive, I = 100 A
T
;
150
IXYS reserves the right to change limits, conditions and dimensions. 20100323
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
CLA 100 PD 1200 N
A
advanced
I
RMS
A
per terminal 150
R
thCH
K/W0.10
M
D
Nm1.5
mounting torque 1.1
T
stg
°C150
storage temperature -40
Weight g30
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
Ordering Delivering Mode Base Qty Code Key
Standard Part Name
CLA 100 PD 1200 NA 509048Tube 10
abcde
YYWW XXXXXX
Product Marking
Logo Part No.
DateCode Assembly Code
C
L
A
100
PD
1200
NA
Thyristor (SCR)
High Efficiency Thyristor
(up to 1200 V)
Phase leg, high-side Thyristor / low-side Diode
SOT-227B (minibloc)
=
=
=
Marking on Pr oduct
CLA100PD1200NA
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
M
T
Nm1.5
terminal torque 1.1
V
ISOL
V3000
t = 1 second
V2500
t = 1 minute
isolation voltage
d
S
mm8
mm4
creapage distance on surface
d
A
striking distance through air
Part number
IXYS reserves the right to change limits, conditions and dimensions. 20100323
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
CLA 100 PD 1200 N
A
advanced
SYM MILLIMETERS INCHES
MIN MAX MIN MAX
A 31.50 31.88 1.240 1.255
B 7.80 8.20 .307 .323
C 4.09 4.29 .161 .169
D 4.09 4.29 .161 .169
E 4.09 4.29 .161 .169
F 14.91 15.11 .587 .595
G 30.12 30.30 1.186 1.193
H 37.80 38.23 1.489 1.505
J 11.68 12.22 .460 .481
K 8.92 9.60 .351 .378
L 0.76 0.84 .030 .033
M 12.60 12.85 .496 .506
N 25.15 25.42 .990 1.001
O 1.98 2.13 .078 .084
P 4.95 5.97 .195 .235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 .155 .174
S 4.72 4.85 .186 .191
T 24.59 25.07 .968 .987
U -.05 .10 -.002 .004
V 3.30 4.57 .130 .180
W 19.81 21.08 .780 .830
H
A
G
B
S
D
C
E
F
Q
O
R
U
J
K
P
L
T
M
W
N
V
Nut M4 DIN 934
Lens Head Sc rew M4x8
DIN 7985
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20100323
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
