DUAL FIELD-EFFECT TRANSISTORS, SILICON. N CHANNEL TRANSISTORS DOUBLES A EFFET DE CHAMP, SILICIUM. CANAL N *2N 5198 *2N 5199 - LF amplification Amplification BF - Differential amplifiers Amplificateurs diffrentiels Maximum power dissipation Dissipation de puissance maximale tot (mw) I Kaa 400 | 300 200 100 Oy 0 50 100 150 200 T,,,,(C) ok Preferred device AT 'pss1 'pss2 AVgs { 20 uV/C max 2N 5198 40 2 V/C max 2N 5199 _ 0,9 min. Dispositif recommand Vas1Vas2 { 10 mV max. 2N 5198 15 mV max. 2N 5199 Case [TO-7 1J- See outline drawing CB-124 on last pages Boitier Voir dessin cot CB-124 dernires pages Bottom view Vue de dessous ; #O y $1 q10t Weight : 0,9 g. Masse (Unless otherwise stated) ABSOLUTE RATINGS (LIMITING VALUES) Tamb =+25C ass One VALEURS LIMITES ABSOLUES DUTILISATION (Sauf indications contraires) Drain-source voltage Tension drain-source Vos 50 v Gate-source voltage Tension grilte-source Ves ~50 Vv Gate-drain voltage Vv _ Tension gritle-drain GD 50 Vv Gate current Courant de grille 'g 50 mA Pp d 1 transistor (1) 250 mW ower dissipation ; Dissipation de puissance 2 transistors (2) Prot 500 mw Tamb = 85C Storage temperature min, T ~65 C Temprature de stockage max. stg +200 C 76-46 1/5 THOMSON-CSF DMISION SEMICONDUCTEURS Sesoesem 835 2N 5198, 2N 5199 MATCHING CHARACTERISTICS T =25C (Unless otherwise stated) CARACTERISTIQUES D/APPARIEMENT amb (Sauf indications contraires} Test conditions i Conditions de mesure Min. Typ. Max. Zero-gate voltage drain current ratio Vp = 20V 'pss1 Rapport des courants de saturation s = I 0,9 0,95 1 Pp Ves =0 DSS2 Gate-source differential voltage Vos = 20V Vee s-V 2N 5198 10 mV Tension diffrentielle grille-source Ip = 200pnA GST'"GS2 | on 5199 15 mV 2N 5198 20 uVPC Gate-source differential voltage Vos = 20V AVeg average temperature coefficient Ip = 200 uA Coefficient de temprature moyen de = AT fa tension diffrentielle grille-source 55 c Courant de drain Ves =0 DSS 0,7 7 mA * Pulsed tp < 03ms impulsions 6 <2% 2/5 836 2N 5198, 2N 5199 STATIC CHARACTERISTICS T =25C (Unless otherwise stated) CARACTERISTIQUES STATIOQUES amb (Sauf indications contraires) Test conditions i Conditions de mesure Min. Typ. Max. Gate-source cut-off voltage Vps = 20V Tension grilie-source de blocage f p= nA 0,7 -4 Vv Vong = 20V Gate-source voltage DS a _ Tension grille-source Ip = 200 nA 0,2 3,8 Vv DYNAMIC CHARACTERISTICS (for small signals) CARACTERISTIQUES DYNAMIQUES (pour petits signaux} Ving = 20V Input capacitance DS _ Capacit dentre Ves =0 6 pF f = 1MHz Ving = 20V Reverse transfer capacitance yes =0 2 F Capacit de transfert inverse GS Pp f = 1MHz ; Vps = 20V Forward transfer admittance Vane =0 1 S Admittance de transfert direct GS ~ . m: f = kHz Vos = 20V Output admittance = Admittance de sortie Ves = 0 50 Hs f = 1kHz Vos = 18 V Vee = son Fe GS Noise figure = Facteur de bruit Rg = 2Ma 1 dB f = 100 Hz Af =6Hz Pulsed ty < 03ms 6 < 2% impulsions 3/6 2N 5198, 2N 5199 STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES D ' pss {mal ima} | Vpg = 20 V Ves=9 10 3 7,5 2,5 A / Vpg = 20 Ip =1NnA 0 0 1 0 5 10 15 Vogtv) 0 1 2 Vesor'V) Ves 15 ess (vy (mA) (pA) Ty 5 3 0,7 S 2 Alp_ YA 06 10 AQ Ke =0 LY 5 2 0,5 > 0,4 102 x . -1 7 0,3 ; | 0,2 10 5 9 Vos = 20V 0.1 2 Veg =0 0 10 Q 2,5 5 7,5 Ipgg(mAl 0 50 100 150 200 ac) 4/5 838 2N 5198, 2N 5199 DYNAMIC CHARACTERISTICS CARACTERISTIQUES DYNAMIQUES Mos (ms) Vps = 20 V f =1kHz tees. 0,5 1,5 -VgglV) 15 20 Vps (Vv) 114ss r (pF) Vpg = 20V f =1MHz2J 6 a P| | 2 40 0 10 20 -Vgslv) F (dB) T_T Vps =20V Vgs=0 \ 5 4 \ 3 \ N \ A N \ , N 1 NN N 4S 7; oe S 7, 4 % S88 0 1? 4 ea 2 4 689 2 4 F agikey 839