2SK3608-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Ratings 200 170 13 52 30 13 175 20 5 1.67 50 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) Operating and storage Tch C temperature range Tstg C < < *1 L=1.65mH, Vcc=48V *2 Tch < 150C *3 I F -I D , -di/dt=50A/s, Vcc BV DSS , Tch < = = = 150C = *4 VDS < *5 VGS=-30V = 200V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=200V VGS=0V VDS=160V VGS=0V VGS=30V VDS=0V ID=6.5A VGS=10V Typ. 200 3.0 Tch=25C Tch=125C ID=6.5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=6.5A VGS=10V 5.5 RGS=10 V CC =100V ID=13A VGS=10V L=100H Tch=25C IF=13A VGS=0V Tch=25C IF=13A VGS=0V -di/dt=100A/s Tch=25C 10 131 11 770 110 5 12 2.6 22 6.1 21 8 5 Max. 5.0 25 250 100 170 1155 165 7.5 18 3.9 33 9.2 31.5 12 7.5 13 1.10 0.15 0.88 1.65 Units V V A nA m S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance www.fujielectric.co.jp/denshi/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. Units 2.5 75.0 C/W C/W 1 2SK3608-01L,S,SJ FUJI POWER MOSFET Characteristics Allowable Power Dissipation PD=f(Tc) Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=13A 300 70 60 250 50 200 EAV [mJ] PD [W] 40 30 150 100 20 50 10 0 0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 starting Tch [C] Tc [C] Typical Output Characteristics Typical Transfer Characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 40 100 20V 35 10V 8V 30 7.5V 25 7.0V ID[A] ID [A] 10 20 6.5V 15 1 6.0V 10 5 VGS=5.5V 0.1 0 0 2 4 6 8 10 0 12 1 2 3 4 5 6 7 8 9 10 VGS[V] VDS [V] Typical Transconductance Typical Drain-Source on-state Resistance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C RDS(on)=f(ID):80s Pulse test, Tch=25C 100 0.40 VGS= 6.0V 5.5V 0.35 6.5V 7.0V 7.5V 0.30 gfs [S] RDS(on) [ ] 10 8V 10V 0.25 20V 0.20 0.15 1 0.10 0.05 0.1 0.1 1 10 ID [A] 100 0.00 0 5 10 15 20 25 30 35 40 ID [A] 2 2SK3608-01L,S,SJ FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6.5A,VGS=10V Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 A 500 7.0 6.5 450 5.5 350 5.0 VGS(th) [V] RDS(on) [ m ] 6.0 400 300 250 max. max. 4.5 4.0 3.5 3.0 200 min. 2.5 150 2.0 typ. 1.5 100 1.0 50 0.5 0 0.0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 Tch [C] 50 75 100 125 150 Tch [C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Gate Charge Characteristics VGS=f(Qg):ID=13A, Tch=25C 14 10 0 Ciss 12 10 -1 C [nF] VGS [V] 10 8 Vcc= 100V Coss 6 10 4 -2 Crss 2 0 0 10 20 30 10 40 -3 10 -1 10 0 10 Qg [nC] 1 10 2 VDS [V] Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID IF=f(VSD):80s Pulse test,Tch=25C 10 10 10 3 t=f(ID):Vcc=48V, VGS=10V, RG=10 tf 2 t [ns] IF [A] 100 1 td(off) td(on) 10 1 tr 0.1 0.00 0.25 0.50 0.75 1.00 1.25 VSD [V] 1.50 1.75 2.00 10 0 10 -1 10 0 10 1 10 2 ID [A] 3 2SK3608-01L,S,SJ 1 FUJI POWER MOSFET Transient Thermal Impedance Zth(ch-c)=f(t):Duty=0 Maximum Avalanche Current Pulsewidth Avalanche current IAV [A] 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 10 2 10 1 10 0 -6 -5 10 10 -4 -3 10 10 -2 -1 10 0 10 10 Single Pulse 10 -1 10 -2 -3 10 IAV=f(tAV):starting Tch=25C. Vcc=48V 10 -8 10 -7 10 -6 t [sec] 10 -5 10 -4 10 -3 10 -2 tAV [sec] Outline Drawings (mm) FUJI POWER MOS FET FUJI POWER MOS FET FUJI POWER MOS FET OUT VIEW OUT VIEW See Note: 1. See Note: 1. Trademark See Note: 1. 4 Trademark Fig. 1. Fig. 1. Trademark Lot No. Lot No. Lot No. Type name Type name Type name PRE-SOLDER Fig. 1. Fig. 1. CONNECTION CONNECTION 4 1 GATE 2 DRAIN 3 SOURCE Solder Plating Solder Plating Pre-Solder CONNECTION 1 2 3 1. ( ) : Reference dimensions. 2 DRAIN 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. 3 SOURCE Note: 1. Guaranteed mark of avalanche ruggedness. DIMENSIONS ARE IN MILLIMETERS. GATE DRAIN SOURCE Pre-Solder Notes 1 GATE 1 4 2 3 Notes 1. ( ) : Reference dimensions. Note: 1. Guaranteed mark of avalanche ruggedness. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. DIMENSIONS ARE IN MILLIMETERS. Note: 1. Guaranteed mark of avalanche ruggedness. DIMENSIONS ARE IN MILLIMETERS. 4