1
Item Symbol Ratings Unit
Drain-source voltage V DS 200
VDSX *5 170
Continuous drain current ID±13
Pulsed drain current ID(puls] ±52
Gate-source voltage VGS ±30
Non-repetitive Avalanche current IAS *2 13
Maximum Avalanche Energy EAS *1 175
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25°C 1.67
Tc=25°C 50
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3608-01L,S,SJ
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=200V VGS=0V
VDS=160V VGS=0V
VGS=±30V
ID=6.5A VGS=10V
ID=6.5A VDS=25V
VCC=48V ID=6.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
mΩ
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 2.5
75.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=100V
ID=13A
VGS=10V
L=100µH Tch=25°C
IF=13A VGS=0V Tch=25°C
IF=13A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
200
3.0 5.0
25
250
10 100
131 170
5.5 11
770 1155
110 165
5 7.5
12 18
2.6 3.9
22 33
6.1 9.2
21 31.5
812
5 7.5
13 1.10 1.65
0.15
0.88
-55 to +150
Outline Drawings (mm)
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super F AP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<=
<=
<
*1 L=1.65mH, Vcc=48V *2 Tch 150°C
=
<
*4 VDS 200V
<
=
www.fujielectric.co.jp/denshi/scd
*5 VGS=-30V
P4
2
Characteristics
2SK3608-01L,S,SJ FUJI POWER MOSFET
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0 25 50 75 100 125 150
0
10
20
30
40
50
60
70
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
0 25 50 75 100 125 150
0
50
100
150
200
250
300
EAV [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=13A
024681012
0
5
10
15
20
25
30
35
40
20V
7.0V
10V
8V
6.5V
7.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
012345678910
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
0 5 10 15 20 25 30 35 40
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
7.0V
6.5V
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
3
2SK3608-01L,S,SJ FUJI POWER MOSFET
VGS=f(Qg):ID=13A, Tch=25°C
IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
-50 -25 0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
400
450
500
RDS(on) [ m Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6.5A,VGS=10V
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250 µA
VGS(th) [V]
Tch [°C]
0 10203040
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS [V]
Vcc= 100V
10-1 100101102
10-3
10-2
10-1
100
C [nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
4
2SK3608-01L,S,SJ FUJI POWER MOSFET
IAV=f(tAV):starting Tch=25°C. Vcc=48V
Avalanche current IAV [A]
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
tAV [sec]
GATE
DRAIN
SOURCE
See Note: 1.
Trademark
Lot No.
DIMENSIONS ARE IN MILLIMETERS.
Type name
FUJI POWER MOS FET
CONNECTION
Notes
1. ( ) : Reference dimensions.
Note: 1. Guaranteed mark of
avalanche ruggedness. 2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
Pre-Solder
Fig. 1.
Fig. 1.
OUT VIEW
Solder Plating
4
1
24 3
GATE
DRAIN
SOURCE
See Note: 1.
Trademark
Lot No.
Type name
FUJI POWER MOS FET
CONNECTION
Notes
1. ( ) : Reference dimensions.
Note: 1. Guaranteed mark of
avalanche ruggedness.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
OUT VIEW
Fig. 1.
Fig. 1.
Solder Plating
Pre-Solder
DIMENSIONS ARE IN MILLIMETERS.
24
1
3
PRE-SOLDER
See No te: 1.
Trademark
Lot No.
Type name
Note: 1. Guaranteed mark of avalanche ruggedness.
CONNECTION
GATE
DRAIN
SOURCE
DIMENSIONS ARE IN MILLIMETERS.
FUJI POWER MOS FET
123
1
2
3
Outline Drawings (mm)
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Transient Thermal Impedance
Zth(ch-c)=f(t):Duty=0
Zth(ch-c) [°C/W]
t [sec]
