PDZ6.2B/T1 - NXP - Datasheet.Directory

DATA SH EET

Product speciﬁcation

Supersedes data of 2002 Feb 18 2004 Mar 22

DISCRETE SEMICONDUCTORS

PDZ-B series

Voltage regulator diodes

2004 Mar 22 2

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes PDZ-B series

FEATURES

•Total power dissipation: max. 400 mW

•Small plastic package suitable for surface mounted

design

•Wide variety of voltage ranges: nominal 2.4 to 36 V

(E24 range)

•Tolerance approximately ±2%.

APPLICATIONS

•General voltage regulation.

DESCRIPTION

Low-power general purpose voltage regulator diodes in a

small plastic SMD SOD323 (SC-76) package.

PINNING

PIN DESCRIPTION

1 cathode

2 anode

Fig.1 Simplified outline (SOD323; SC-76) and

symbol.

handbook, halfpage



Top view

MAM387

The marking bar indicates the cathode.

MARKING

ORDERING INFORMATION

TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE

PDZ2.4B Z0 PDZ5.1B Z8 PDZ11B ZG PDZ24B ZQ

PDZ2.7B Z1 PDZ5.6B Z9 PDZ12B ZH PDZ27B ZR

PDZ3.0B Z2 PDZ6.2B ZA PDZ13B ZJ PDZ30B ZS

PDZ3.3B Z3 PDZ6.8B ZB PDZ15B ZK PDZ33B ZT

PDZ3.6B Z4 PDZ7.5B ZC PDZ16B ZL PDZ36B ZU

PDZ3.9B Z5 PDZ8.2B ZD PDZ18B ZM

PDZ4.3B Z6 PDZ9.1B ZE PDZ20B ZN

PDZ4.7B Z7 PDZ10B ZF PDZ22B ZP

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

PDZ2.4B to

PDZ36B −plastic surface mounted package; 2 leads SOD323

2004 Mar 22 3

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes PDZ-B series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Device mounted on a printed-circuit board measuring 11 ×25 ×1.6 mm.

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board measuring 11 ×25 ×1.6 mm.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IFcontinuous forward current −200 mA

IZSM non-repetitive peak reverse current tp= 100 µs; square wave;

Tamb =25°C prior to surge see Table 2

Ptot total power dissipation Tamb =25°C; note 1;

see Fig.2 −400 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-s) thermal resistance from junction to soldering point 130 K/W

Rth(j-a) thermal resistance from junction to ambient note 1 340 K/W

2004 Mar 22 4

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes PDZ-B series

CHARACTERISTICS

Table 1 Total series

Tj=25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage IF= 10 mA; see Fig.3 0.9 V

IF= 100 mA; see Fig.3 1.1 V

IRreverse current

PDZ2.4B VR=1V 50 µA

PDZ2.7B VR=1V 20 µA

PDZ3.0B VR=1V 10 µA

PDZ3.3B VR=1V 5 µA

PDZ3.6B VR=1V 5 µA

PDZ3.9B VR=1V 3 µA

PDZ4.3B VR=1V 3 µA

PDZ4.7B VR=1V 2 µA

PDZ5.1B VR= 1.5 V 2 µA

PDZ5.6B VR= 2.5 V 1 µA

PDZ6.2B VR= 3 V 500 nA

PDZ6.8B VR= 3.5 V 500 nA

PDZ7.5B VR= 4 V 500 nA

PDZ8.2B VR= 5 V 500 nA

PDZ9.1B VR= 6 V 500 nA

PDZ10B VR= 7 V 100 nA

PDZ11B VR= 8 V 100 nA

PDZ12B VR= 9 V 100 nA

PDZ13B VR= 10 V 100 nA

PDZ15B VR= 11 V 50 nA

PDZ16B VR= 12 V 50 nA

PDZ18B VR= 13 V 50 nA

PDZ20B VR= 15 V 50 nA

PDZ22B VR= 17 V 50 nA

PDZ24B VR= 19 V 50 nA

PDZ27B VR= 21 V 50 nA

PDZ30B VR= 23 V 50 nA

PDZ33B VR= 25 V 50 nA

PDZ36B VR= 27 V 50 nA

2004 Mar 22 5

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes PDZ-B series

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Table 2 Per type

Tj=25°C unless otherwise speciﬁed.

TYPE

NUMBER

WORKING VOLTAGE

VZ(V)

at IZ=5mA

DIFFERENTIAL RESISTANCE

rdif (Ω)

TEMP. COEFF.

SZ(mV/K)

at IZ=5mA

(see Figs 4 and 5)

DIODE CAP.

Cd(pF) at

f = 1 MHz;

VR=0

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A) at tp= 100 µs;

Tamb =25°C

MIN. MAX. MAX. at IZ

(mA) MAX. at IZ

(mA) TYP. MAX. MAX.

PDZ2.4B 2.43 2.63 1000 0.5 100 5 −1.6 450 8.0

PDZ2.7B 2.69 2.91 1000 0.5 100 5 −2.0 440 8.0

PDZ3.0B 2.85 3.07 1000 0.5 95 5 −2.1 425 8.0

PDZ3.3B 3.32 3.53 1000 0.5 95 5 −2.4 410 8.0

PDZ3.6B 3.60 3.85 500 1.0 90 5 −2.4 390 8.0

PDZ3.9B 3.89 4.16 500 1.0 90 5 −2.5 370 8.0

PDZ4.3B 4.17 4.48 600 1.0 90 5 −2.5 350 8.0

PDZ4.7B 4.55 4.75 600 1.0 90 5 −1.4 325 8.0

PDZ5.1B 4.96 5.20 250 0.5 60 5 0.3 300 5.5

PDZ5.6B 5.48 5.73 100 0.5 50 5 1.9 275 5.5

PDZ6.2B 6.06 6.33 80 0.5 50 5 2.7 250 5.5

PDZ6.8B 6.65 6.93 60 0.5 40 5 3.4 215 5.5

PDZ7.5B 7.28 7.60 60 0.5 10 5 4.0 170 3.5

PDZ8.2B 8.02 8.36 60 0.5 10 5 4.6 150 3.5

PDZ9.1B 8.85 9.23 60 0.5 10 5 5.5 120 3.5

PDZ10B 9.77 10.21 60 0.5 10 5 6.4 110 3.5

PDZ11B 10.78 11.22 60 0.5 10 5 7.4 108 3.0

PDZ12B 11.74 12.24 80 0.5 10 5 8.4 105 3.0

PDZ13B 12.91 13.49 80 0.5 10 5 9.4 103 2.5

PDZ15B 14.34 14.98 80 0.5 15 5 11.4 99 2.0

PDZ16B 15.85 16.51 80 0.5 20 5 12.4 97 1.5

PDZ18B 17.56 18.35 80 0.5 20 5 14.4 93 1.5

PDZ20B 19.52 20.39 100 0.5 20 5 16.4 88 1.5

PDZ22B 21.54 22.47 100 0.5 25 5 18.4 84 1.3

PDZ24B 23.72 24.78 120 0.5 30 5 20.4 80 1.3

PDZ27B 26.19 27.53 150 0.5 40 5 23.4 73 1.0

PDZ30B 29.19 30.69 200 0.5 40 5 26.6 66 1.0

PDZ33B 32.15 33.79 250 0.5 40 5 29.7 60 0.9

PDZ36B 35.07 36.87 300 0.5 60 5 33.0 59 0.8

2004 Mar 22 6

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes PDZ-B series

GRAPHICAL DATA

Fig.2 Power derating curve.

handbook, halfpage

0 50 100 200

Tamb (°C)

Ptot

(mW)

500

400

300

100

200

150

MBK245

Tj=25°C.

Fig.3 Forward current as a function of forward

voltage; typical values.

handbook, halfpage

0.6 1

300

100

200

MBG781

0.8 VF (V)

(mA)

Fig.4 Temperature coefficient as a function of

working current; typical values.

PDZ2.4B to PDZ4.3B.

Tj=25°Cto150°C.

handbook, halfpage

060

−2

−3

−1

MGL273

20 40 IZ (mA)

(mV/K) 4.3

3.9

3.6

3.3 3.0

2.4

2.7

Fig.5 Temperature coefficient as a function of

working current; typical values.

PDZ4.7B to PDZ12B.

Tj=25°Cto150°C.

handbook, halfpage

02016

−5

MGL274

4812 IZ (mA)

(mV/K)

4.7

9.1

8.2

7.5

6.8 6.2

5.6

5.1

2004 Mar 22 7

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes PDZ-B series

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOD323 SC-76

SOD323

99-09-13

03-12-17

Note

1. The marking bar indicates the cathode

UNIT A

mm 0.05

1.1

0.8 0.40

0.25 0.25

0.10 1.8

1.6 1.35

1.15 2.7

2.3 0.45

0.15

max

DIMENSIONS (mm are the original dimensions)

Plastic surface mounted package; 2 leads

(1)

2 mm

scale

bpc D E HDQ

0.25

0.15

Lpv

0.2

detail X

A1c

HDvA

2004 Mar 22 8

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes PDZ-B series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuchapplications willbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomers usingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no licence or title under any patent,

makes no representations or warranties that these

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right infringement, unless otherwise specified.

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Contact information

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Printed in The Netherlands R76/05/pp9 Date of release: 2004 Mar 22 Document order number: 9397 750 12615