s74 MOSPEC SILICON POWER TRANSISTORS NPN The MJ15022 and MJ15024 are power base power transistors MJ15022 designed for high power audio,disk head positioners and other MJ15024 linear applications. FEATURES * High Safe Operating Area * High DC Current Gain- 16 AMPERE hee= 15(Min)@I,= 8.0 A V__.=4.0 V SILICON POWER TRANSISTORS 200 - 250 VOLTS MAXIMUM RATINGS 250 WATTS Characteristic Symbol | MJ15022 | MJ15024 Unit Collector-Emitter Voitage Vero 200 250 Vv Collector-Base Voltage Vepo 350 400 Vv Emitter-Base Voitage Veso 5.0 Vv Collector-Emitter Voltage Veex 400 V Collector Current - Continuous Ie 16 A ~ Peak bona 30 Base Current-Continuous is 5 A Total Power Dissipation @T, = 25C Py 250 w Derate above 25C 1.43 wre Operating and Storage Junction Ty: Tst c Temperature Range -65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max UNIT Thermal ResistanceJunction to Case Rdjc 0.7 CAN PIN 1.BASE FIGURE -1 POWER DERATING 0 2 50 75 100 125 150 To , TEMPERATURE( C) 175 200 2.EMITTER COLLECTOR(CASE) DIM MILLIMETERS MIN MAX A 38.75 | 39.96 B 19.28 | 22.23 Cc 796 9.28 D 14.18 | 12.19 E 25.20. | 26.67 F 0.92 1.09 G 1.38 1.62 H 23.90 | 30.40 | 16.64 | 17.30 d 3.88 43% K 10.67 | 11.18MJ15022 , MJ15024 NPN a ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) MJ15022 Veeo (sus) (Ig= 100 mA, tp= 0) MJ15024 250 Collector Cutoff Current (Vog 200'V , Vee(om 15V) MJ15022 250 (Vog= 250 V , Vegiom 15V) MJ15024 ; 250 Collector Cutoff Current (Vee* 150 V, 1,= 0) MJ15022 500 (Veg= 200 V, I,= 0) MJ15024 500 Emitter Cutoff Current lego 500 uA (Vep= 5.0 V, 1,= 0) ON CHARACTERISTICS (1) Dc Current Gain hFE (lg= 8.0 A, Veog= 4.0 V) 15 60 (1g= 16 A, Vog= 4.0 V) 5 Collector-Emitter Saturation Voltage Voe;sat) V (1, = 8.0 A, I,= 0.8 A) 1.4 (Ie= 16 A, Ip= 3.2 A) 4.0 Base-Emitter On Voltage VpE{on) | (1g =8.0A, Vop= 4.0V) | 22 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product (2) (le= 1.0 A, Veg= 10 V, f= 1.0MHz) 4.0 Output Capacitance Con pF ( Veg= 10V, |,= 0, f= 1.0MHz ) 500 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% (2) f= [Peel F ane MHzMJ15022,MJ15024 NPN a a a aaa DC CURRENT GAIN Ty=100%C z Ty=25C S 5 WwW x x 2 So a i 02 03 05 1 2 5 7 10 20 lc, COLLECTOR CURRENT (AMP) CAPACITANCES & Ww Oo z E & o 1.0 2.0 5.0 10 20 50 100 300 Va,REVERSE VOLTAGE(VOLTS) ACTIVE-REGION SAFE OPERATING AREA a le , COLLECTOR CURRENT (Amp) = Nv ~~~ Bonding Wire Limit ~--~-- Thermally Limited (Single Puse) - Second Breakdown Limited 1 2 10 20 50 100 200 500 Vce , COLLECTOR EMITTER VOLTAGE (VOLTS) fr, TRANSITION FREQUENCY (MHz) V VOLTAGE (VOLTS) Vce , COLLECTOR EMITTER VOLTAGE (VOLTS) "ON" VOLTAGE 2.0 16 4.2 Vee@Vce4V 08 Tym25 C 0.4 100C Vee(sa) @lo/p=10 0 02 03 05 07 1.0 20 3.0 5.0 7.0 10 20 IC , COLLECTOR CURRENT (AMP) CURRENT GAIN- BANDWIDTH PRODUCT To=28C Voe=10V f test MHz 0.1 0.2 0.5 1.0 2.0 5.0 10 IC , COLLECTOR CURRENT (AMP) COLLECTOR SATURATION REGION NN o > aH o KR 2 mo e zh o 01 0203 05 1 23 5 10 30 ls, BASE CURRENT (AMPS) $