VS-MBR10...PbF Series, VS-MBR10...-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 10 A FEATURES Base cathode 2 3 Anode 1 Cathode TO-220AC * * * * * * * * PRODUCT SUMMARY Package TO-220AC IF(AV) 10 A VR 35 V, 45 V VF at IF 0.57 V IRM max. 15 mA at 125 C TJ max. 150 C Diode variation Single die EAS 8 mJ 150 C TJ operation High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC Designed and qualified according to JEDEC-JESD47 Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL VALUES IF(AV) Rectangular waveform 10 IFRM TC = 135 C 20 UNITS A 35/45 V IFSM tp = 5 s sine 1060 A VF 10 Apk, TJ = 125 C 0.57 V TJ Range - 65 to 150 C VRRM VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage Maximum working peak reverse voltage VS-MBR1035PbF VS-MBR1035-N3 VS-MBR1045PbF VS-MBR1045-N3 UNITS 35 35 45 45 V VR VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 135 C, rated VR 10 Peak repetitive forward current IFRM Rated VR, square wave, 20 kHz, TC = 135 C 20 5 s sine or 3 s rect. pulse Non-repetitive peak surge current IFSM Following any rated load condition and with rated VRRM applied Surge applied at rated load conditions halfwave, single phase, 60 Hz Non-repetitive avalanche energy EAS Repetitive avalanche current IAR Revision: 29-Aug-11 TJ = 25 C, IAS = 2 A, L = 4 mH Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical UNITS A 1060 A 150 8 mJ 2 A Document Number: 94284 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR10...PbF Series, VS-MBR10...-N3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TJ = 25 C 20 A VFM (1) Maximum forward voltage drop 10 A TJ = 125 C 20 A Maximum instantaneous reverse current IRM (1) Threshold voltage VF(TO) TJ = 25 C Rated DC voltage TJ = 125 C TJ = TJ maximum VALUES UNITS 0.84 V 0.57 0.72 0.1 mA 15 0.354 V 17.6 m Forward slope resistance rt Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 C 600 pF Typical series inductance LS Measured from top of terminal to mounting plane 8.0 nH 10 000 V/s VALUES UNITS Maximum voltage rate of change dV/dt Rated VR Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ - 65 to 150 Maximum storage temperature range TStg - 65 to 175 Maximum thermal resistance, junction to case RthJC DC operation 2.0 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased (only for TO-220) 0.50 Approximate weight Mounting torque Marking device Revision: 29-Aug-11 C C/W 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf * cm (lbf * in) Case style TO-220AC MBR1035 MBR1045 Document Number: 94284 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR10...PbF Series, VS-MBR10...-N3 Series Vishay Semiconductors 100 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 C TJ = 125 C TJ = 25 C 10 1 0.2 TJ = 150 C 10 TJ = 125 C 1 0.1 TJ = 100 C TJ = 75 C TJ = 50 C 0.01 TJ = 25 C 0.001 0.0001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 C 100 0 10 20 30 40 50 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (C/W) 10 1 PDM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 1.0 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 29-Aug-11 Document Number: 94284 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR10...PbF Series, VS-MBR10...-N3 Series www.vishay.com Vishay Semiconductors 10 Average Power Loss (W) Allowable Case Temperature (C) 150 145 140 DC Square wave (D = 0.50) Rated VR applied 135 130 125 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 8 6 RMS limit 4 2 DC See note (1) 120 0 0 3 6 9 12 15 0 2 4 6 8 10 12 14 16 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR Revision: 29-Aug-11 Document Number: 94284 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR10...PbF Series, VS-MBR10...-N3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MBR 1 2 10 45 PbF 3 4 5 1 - Vishay Semiconductors product 2 - Schottky MBR series 3 - Currrent rating (10 = 10 A) 4 - Voltage ratings 5 - Environmental digit 35 = 35 V 45 = 45 V PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-MBR1035PbF 50 1000 PACKAGING DESCRIPTION Antistatic plastic tube VS-MBR1035-N3 50 1000 Antistatic plastic tube VS-MBR1045PbF 50 1000 Antistatic plastic tube VS-MBR1045-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model Revision: 29-Aug-11 www.vishay.com/doc?95221 TO-220AC PbF www.vishay.com/doc?95224 TO-220AC -N3 www.vishay.com/doc?95068 www.vishay.com/doc?95293 Document Number: 94284 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A OP 0.014 M B A M E2 (7) Q 3 D D L1 E A1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B D1 1 2 A (6) H1 (7) (6) D 1 2 3 Lead tip L3 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode L4 L c e1 A Conforms to JEDEC outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 A2 2.56 2.92 0.101 0.115 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 MILLIMETERS INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 E2 - 0.76 - 0.030 7 e 2.41 2.67 0.095 0.105 e1 4.88 5.28 0.192 0.208 4 H1 6.09 6.48 0.240 0.255 L 13.52 14.02 0.532 0.552 4 L1 3.32 3.82 0.131 0.150 c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 D 14.85 15.25 0.585 0.600 3 OP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN. 90 to 93 6, 7 2 2 90 to 93 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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