Data Sheet 2.5V Drive Nch MOSFET 2SK3018UB Structure Silicon N-channel MOSFET Dimensions (Unit : mm) UMT3F 2.0 0.9 0.53 (1) 0.53 0.425 2.1 Features 1) Low on-resistance. 2) Low voltage drive(2.5V drive). (3) 1.25 0.425 0.32 (2) 0.65 0.65 1.3 0.13 Abbreviated symbol : KN Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) 2SK3018UB Inner circuit Taping TCL 3000 (3) 2 (1) 1 Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Drain current Limits Unit 30 20 V V 100 mA 400 200 mA mW Tch Tstg 150 55 to 150 C C Symbol Rth (ch-a)* Limits 625 Unit C / W VDSS Gate-source voltage Continuous Pulsed Power dissipation Channel temperature Range of storage temperature (1) Gate (2) Source (3) Drain VGSS ID IDP PD *1 *2 (2) 1 ESD PROTECTION DIODE 2 BODY DIODE *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. Thermal resistance Parameter Channel to Ambient * Each terminal mounted on a recommended land. www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.10 - Rev.A Data Sheet 2SK3018UB Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol IGSS Drain-source breakdown voltage V(BR)DSS Min. Typ. Max. Unit Conditions - - 1 A VGS=20V, VDS=0V 30 - - V ID=10A, VGS=0V IDSS - - 1 A VDS=30V, VGS=0V Gate threshold voltage VGS (th) 0.8 - 1.5 V VDS=3V, ID=100A Static drain-source on-state resistance RDS (on)* - 5 8 - 7 13 Forward transfer admittance l Yfs l * 20 - - Input capacitance Ciss - 13 - pF VDS=5V Output capacitance Coss - 9 - pF VGS=0V Reverse transfer capacitance Crss - 4 - pF f=1MHz Turn-on delay time td(on) * - 15 - ns VDD 5V, ID=10mA tr * - 35 - ns VGS=5V td(off) * tf * - 80 80 - ns ns RL=500 RG=10 Zero gate voltage drain current Rise time Turn-off delay time Fall time ID=10mA, VGS=V ID=1mA, VGS=2.5V mS VDS=3V, ID=10mA *Pulsed www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A Data Sheet 2SK3018UB 200m 0.15 3V Ta=25C Pulsed 3.5V 0.1 2.5V 0.05 2V 2 20m 10m 5m 2m Ta=125C 75C 25C -25C 1m 0.5m 3 4 0.1m 0 5 1 DRAIN-SOURCE VOLTAGE : VDS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () Ta=125C 75C 25C -25C 10 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 20 2 1 0.005 0.02 0.05 0.1 0.2 0.5 0.5 6 ID=10mA 5 4 3 2 0.1 0.05 0.01 0.005 0 -50 -25 0 25 50 75 100 125 5 150 CHANNEL TEMPERATURE : Tch (C) Fig.7 Static drain-source on-state resistance vs. channel temperature www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 150 ID=10mA ID=1mA 0 0 5 10 15 20 VGS=0V Pulsed 100m 0.02 0.001 0.0001 0.0002 125 10 200m Ta=-25C 25C 75C 125C 0.002 100 Fig.6 Static drain-source on-state resistance vs. gate-source voltage VDS=3V Pulsed 1 75 GATE-SOURCE VOLTAGE : VGS (V) 0.2 ID=100mA 50 Ta=25C Pulsed Fig.5 Static drain-source on-state resistance vs. drain current () FORWARD TRANSFER ADMITTANCE : |Yfs| (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () 0.01 25 15 5 0.5 0.001 0.002 0 Fig.3 Gate threshold voltage vs. channel temperature 10 VGS=4V Pulsed 7 0 -50 -25 DRAIN CURRENT : ID (A) Fig.4 Static drain-source on-state resistance vs. drain current () 8 0.5 CHANNEL TEMPERATURE : Tch (C) VGS=2.5V Pulsed Ta=125C 75C 25C -25C DRAIN CURRENT : ID (A) 9 1 4 SOURCE CURRENT : IS (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () 50 VDS=3V ID=0.1mA Pulsed 1.5 Fig.2 Typical transfer characteristics VGS=4V Pulsed 20 2 GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Typical output characteristics 50 3 2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () 1 50m 0.2m VGS=1.5V 0 0 VDS=3V Pulsed 100m DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 4V GATE THRESHOLD VOLTAGE : VGS(th) (V) Electrical characteristic curves 50m 20m Ta=125C 75C 25C -25C 10m 5m 2m 1m 0.5m 0.2m 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 DRAIN CURRENT : ID (A) Fig.8 Forward transfer admittance vs. drain current 3/5 0.1m 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.9 Reverse drain current vs. source-drain voltage () 2011.10 - Rev.A Data Sheet 2SK3018UB 50m 20m VGS=4V 10m 0V 5m 2m 1m 0.5m 1000 Ta=25C f=1MHZ VGS=0V 20 CAPACITANCE : C (pF) SOURCE CURRENT : IS (A) 50 Ta=25C Pulsed 100m Ciss 10 5 Coss Crss 2 Ta=25C VDD=5V VGS=5V RG=10 Pulsed tf 500 SWITHING TIME : t (ns) 200m td(off) 200 100 50 20 tr td(on) 10 5 1 0.2m 0.1m 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.10 Reverse drain current vs. source-drain voltage () www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 0.5 0.1 0.2 0.5 1 2 5 10 20 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Typical capacitance vs. drain-source voltage 4/5 50 2 0.1 0.2 0.5 1 2 5 10 20 50 100 DRAIN CURRENT : ID (mA) Fig.12 Switching characteristics 2011.10 - Rev.A Data Sheet 2SK3018UB Measurement circuits Pulse width VGS ID VDS RL 50% 10% D.U.T. RG 90% 50% 10% VGS VDS VDD 90% td(on) tr ton Fig.1-1 Switching Time Measurement Circuit 10% 90% td(off) tf toff Fig.1-2 Switching Waveforms Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A