KEC SEMICONDUCTOR TECHNICAL DATA KDS193 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES + Small Package >: SOT-23. DIM MILLIMETERS * Low Forward Voltage > Ve=0.9V (Typ.). 5 iat. 00/ 018 - Fast Reverse Recovery Time : tr=1.6ns(Typ.). c 1.30 MAX * Small Total capacitance > Cr=0.9pF (Typ.). 5 OES G 1.90 H 0.95 J 0.13+0.10/-0.05 MAXIMUM RATINGS (Ta=25T) : 0.00 om P P - | ~ M 0.20 MIN CHARACTERISTIC SYMBOL | RATING | UNIT [ N | 1.00+0.20/-0.10 oo] = | 7 P v Maximum (Peak) Reverse Voltage Vim 85 nv Ay LT 3 Reverse Voltage VR 80 Vv 1 Ne A 2. ANODE # Maximum (Peak) Forward Current Iru 300 mA 3. CATHODE Oi a Average Forward Current To 100 mA SOT23 Surge Current (10ms) Ipsum 2 A Power Dissipation Pp 150 mW Junction Temperature T; 150 Cc Marking H Lot No. Storage Temperature Range Tstg -59~ 150 Cc 7 Type Name LH ' 3 = ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. MAX. | UNIT Vea) Tp=lmA - 0.60 - Forward Voltage Viva) Tp=10mA - 0.72 - Vv Ve) Tp=100mA - 0.90 1.20 Reverse Current Tp Vr=80V - - 0.5 LA Total Capacitance Cr Vr=0, f=1MHz - 0.9 3.0 pF Reverse Recovery Time tor Tp=10mA - 1.6 4.0 ns 1998. 6. 15 1/1 Revision No : 1 KEC