19 ELECTRICAL CHARACTERISTICS
19-4 Seiko Epson Corporation S1C6F016 TECHNICAL MANUAL
(Rev. 1.1)
Current Consumption19.4.4
Unless otherwise specified: VDD=1.8 to 3.6V, VSS=0V, FLCKSx=0x0 (32Hz), Ta=25°C, C1–C5=0.1µF, No panel load
Item Symbol Condition Min. Typ. Max. Unit
Current consumption in SLEEP ISLP When SLP is executed: OSC1=ON, OSC3=OFF – 0.7 2.5 µA
Current consumption in HALT IHALT1 OSC1=32kHz Crystal, OSC3=OFF – 2 5 µA
IHALT2 OSC1=32kHz Crystal, OSC3=4MHz Ceramic – 100 200 µA
IHALT3 OSC1=32kHz Crystal, OSC3=2MHz CR (external R) – 160 300 µA
IHALT4
OSC1=32kHz Crystal, OSC3=500kHz CR (built-in R)
– 50 90 µA
Current consumption
during execution
IEXE1 OSC1=32kHz Crystal, OSC3=OFF, CPUclk=OSC1 – 9 18 µA
IEXE2 OSC1=32kHz Crystal, OSC3=4MHz Ceramic,
CPUclk=OSC3
– 950 1300 µA
IEXE3 OSC1=32kHz Crystal, OSC3=2MHz CR(external R),
CPUclk=OSC3
– 600 1100 µA
IEXE4 OSC1=32kHz Crystal, OSC3=500kHz CR(built-in R),
CPUclk=OSC3
– 160 250 µA
Current consumption during
execution in heavy load
protection mode
IEXE1H OSC1=32kHz Crystal, OSC3=OFF, CPUclk=OSC1
VDHLMOD=1
– 16 30 µA
LCD circuit current
(VC1 reference)
ILCD1 DSPC[1:0]=All on, LC[3:0]=FH, OSC1=32kHz,
VDD=1.8 to 3.6V, VCREF=0 *1
– 1 3 µA
LCD circuit current in heavy
load protection mode
(VC1 reference)
ILCD1H DSPC[1:0]=All on, LC[3:0]=FH, OSC1=32kHz,
VDD=1.8 to 3.6V, VCREF=0, VCHLMOD=1 *1
– 10 25 µA
LCD circuit current
(VC2 reference)
ILCD2 DSPC[1:0]=All on, LC[3:0]=FH, OSC1=32kHz,
VDD=2.8 to 3.6V, VCREF=1 *1
– 0.8 2 µA
LCD circuit current in heavy
load protection mode
(VC2 reference)
ILCD2H DSPC[1:0]=All on, LC[3:0]=FH, OSC1=32kHz,
VDD=2.8 to 3.6V, VCREF=1, VCHLMOD=1 *1
– 15 30 µA
SVD circuit current ISVD VDD=3.6V *2– 8 15 µA
R/F converter circuit current IRFC VDD=3.6V, CREF=CSEN=1000pF, RREF=RSEN=10kΩ *3– 200 300 µA
*1 This value is added to the current consumption in HALT mode, current consumption during execution, or current consumption
during execution in heavy load protection mode when the LCD circuit is active. Current consumption increases according to the
display contents and panel load.
*2 This value is added to the current consumption during execution or current consumption during execution in heavy load protection
mode when the SVD circuit is active.
*3 This value is added to the current consumption during execution when the R/F converter circuit is active.
Oscillation Characteristics19.5
The oscillation characteristics change depending on the conditions (components used, board pattern, etc.). Use the
following characteristics as reference values.
OSC1 crystal oscillation circuit
Unless otherwise specified: VDD=1.8 to 3.6V, VSS=0V, Ta=25°C, Crystal resonator=C-002RX (R1=30kΩ Typ., CL=12.5pF),
CG1=25pF (external), CD1=Built-in
Item Symbol Condition Min. Typ. Max. Unit
Oscillation start time tsta – – 3 s
External gate capacitance CG1 Including the board capacitance 0 – 25 pF
Built-in drain capacitance CD1 In case of the chip – 20 – pF
Frequency/IC deviation Df/DIC VDD=constant -10 – 10 ppm
Frequency/voltage deviation Df/DV – – 1 ppm/V
Frequency adjustment range Df/DCGVDD=constant, CG=0 to 25pF 25 – – ppm
OSC3 ceramic oscillation circuit
Unless otherwise specified: VDD=1.8 to 3.6V, VSS=0V, Ta=25°C, CG3=CD3=30pF
Item Symbol Condition Min. Typ. Max. Unit
Oscillation start time tsta – – 1 ms