92GU05,06 2N6716,17 60-80 VOLTS 2 AMPS, 1.2 WATTS NPN POWER TRANSISTORS COMPLEMENTARY TO THE 2N6728, 29/92GU55, 56 SERIES Applications: conn e High VCE ratings: 92GU05 = 60V min. VCEO sure BASE 92GU06 = 80V min. VCEO outs Exceptional power-to-price ratio CASE STYLE TO-237 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 216(5.46) ,160(4.06) t , d 105 (2.67) ,095(2.41) a -260(7.11 FT -260(.60) 2210(5.33) -170(4.32) a 27) ' _ SEATING -260(6.36) PLANE + 9191.48 or[ 0101.48) & 916.41) } 500 (12.7) "016(.41) 016(.41) 014.38) 022086) o [022158 4 220.50 ] 016(.41) 016(.41) 014.36) 205(5.21 1175(4.44) Onn 016(.41) 014(.36) A 108(2.67) 4 f 3 2 1\ 0802.03) -165(4.23) t ee oP r a sso. /~| - |. xen meen 085(2.41) TYPE TERM.1 | TERM.2 | TERM.3 TAB 70-237 | EMITTER | BASE j COLLECTOR | COLLECTOR maximum ratings (Ta = 25C) (untess otherwise specified) RATING SYMBOL 92GU05/2N6716 92GU06A/2N6717 UNITS Collector-Emitter Voltage VcEO 60 80 Volts Collector-Base Voltage Vos 60 80 Volts Emitter Base Voltage Ves 4.0 4.0 Volts Collector Current Continuous Io 2.0 2.0 A Total Power Dissipation @ Ta = 25C Ppp* 1.2 1.2 Watts Operating and Storage Junction Temperature Range Ty, Tsta -55 to +150 -55 to +150 C thermal characteristics Thermal Resistance, Junction to Ambient Rea 167 167 C/W Thermal Resistance, Junction to Case Rec 50 50 C/W Ppp = Practical Power Dissipation, i.e., that power which can be dissipated with the device installed in a typical manner on a printed circuit board with total copper run area equal to 1.0 in.2 minimum. 831 electrical characteristics (T, = 25C) (unless otherwise specified) CHARACTERISTIC | SYMBOL | MIN | TYP | MAX | UNIT off characteristics Collector-Emitter Sustaining Voltage 92GU05,2N6716 | VCEQ(sus) 60 _ _ Volts (Ico = 10mA, Ip = OA) 92GU06,2N6717 80 _ ~ Collector Cut-off Current (Vos = 40V, fe = OA) IcBo _ _ (Vop = 5O0V, Ie = OA) _ _ uA 2 eek ok Emitter Cutoff Current (VEB = 4V, Ic = 0A) lEBO 100 HA on characteristics DC Current Gain hee (Io = 50mA, Vee = 1V) 80 _ (Ic = 250mA, Voge = 1V) 50 _ (ic = 500mA, VcE = 1V) 20 _ Base-Emitter On Voltage (Ic = 250mA, Voce = 1V) VBE(on) _ 1.2 Vv Base-Emitter Saturation Voltage VBE(sat) (Ic = 250mA, Ig = 10mA) _ _ 5 Volts (I = 250mA, Ig = 25mA) _ _ 35 dynamic characteristics Collector Capacitance ~ F (Vos = 10V, le = 0, f = 1MHz) Cao 30 p Current-Gain Bandwidth Product fr 50 (Ig = 200mA, Voce = BV, f = 100MHz) _ _ 832