Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN COMPLEMENTARY SILICON EPITAXIAL TRANSISTOR CD2328A
TO-92
BCE
3W AUDIO Out
ut Am
lifier A
lication.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION SYMBOL VALUE UNIT
Collector -Base Voltage VCBO 30 V
Collector -Emitter Voltage VCEO 30 V
Emitter Base Voltage VEBO 5.0 V
Collector Current Continuous IC 1.5 A
Peak ICM 2.0 A
Power Dissipation PD 0.75 W
Operating And Storage Junction Tj, Tstg -55 to +150 deg C
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector -Emitter Voltage VCEO IC=10mA, IB=0 30 - - V
Collector -Base Voltage VCBO IC=100uA, IE=0 30 - - V
Emitter Base Voltage VEBO IE=1mA, IC=0 5.0 - - V
Collector Cut off Current ICBO VCB=30V, IE=0 - - 100 nA
Emitter Cut off Current IEBO VEB=5V, IC=0 - - 100 nA
DC Current Gain hFE* IC=500mA,VCE=2V 100 - 320
Collector Emitter Saturation Voltage VCE(Sat) * IC=1.5A, IB=30mA - - 2.0 V
Base Emitter on Voltage VBE(on)* IC=500mA, VCE=2V - - 1.0 V
Dynamic Characteristics
Output Capacitance Cob VCB=10V, IE=0 - 30 - pF
f=1MHz - 48 - pF
Gain Bandwidth Product ft VCE=2V,IC=500mA, - 120 - MHz
CLASSIFICATION O Y
hFE * 100-200 160-320
*Pulse Test : Pulse Width =300us, Duty Cycle=2%
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IEC QC 700000
IS / IEC QC 750100
Continental Device India Limited Data Sheet Page 1 of 3