MPS6513 — NPN General Purpose Amplifier
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPS6513 Rev. 1.0.0 1
September 2007
MPS6513
NPN General Purpose Amplifier
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier.
• Sourced from Proces 23.
Absolute Maximum Ratings TC=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Ta=25°C unless otherwise noted
*Device mo unted on FR-4 PC B 1.6” X 1.6” X 0.06”.
Electrical Characteristics TC=25°C unless otherwise noted
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings are based on a maximum junction temperature of 150degrees C.
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Vo ltage 30 V
VEBO Emitter-Base Voltage 4 V
ICCollector Current (DC) 200 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Parameter Max. Units
PDTotal Device Dissipation
Derate above 25°C625
5.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Voltage IC = 10 μA40 V
BVCEO Collector-Emitter Voltage IC = 0.5 mA 30 V
BVEBO Emitter-Base Voltage IE = 10 μA 4 V
ICBO Collector-Base Cut-off Current VCB = 30 V, T = 25 °C
T = 60 °C0.05
1.0 μA
hFE DC Current Gain VCE = 10V, IC = 2mA
VCE = 10V, IC = 100mA 90
60 180
VCE(sat) Collector-Emitter Saturation Voltage IC = 50 mA, IB = 5 mA 0.5 V
Cob Output Capacitance VCB = 5V, f = 1.0 MHz 3.5 pF
1. Emitter 2. Base 3. Collector
TO-92
1
MPS6513 NPN General Purpose AmplifierMPS6513
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Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete Not In Production This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I30
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPS6513 Rev. 1.0.0 2
