& OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS w ae 15 MAX 83 6.36 O MAX 619 03 | a 02 | at i Bag 2 ie P 38 REE 0.40 DIMENSIONS IN mm PACKAGE CODE K STI603A anope[t ]BASE caTH_(2 }coL Lae B |EMIT. C2079 Equivalent Circuit _ABSOLUTE MAXIM TOTAL PACKAGE Storage temperature .............. 56C to 150C Operating temperature ............ 55C to 100C Lead temperature (soldering, 10 sec) .......0.....00..00008,. 260C Total package power dissipation @ 25C (LED plus detector) ................000. 260 mW Derate linearly from 25C ............... 3.5 mW/PC CNY17-1 CNY17-3 CNY17-2 CNY17-4 The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. High isolation voltage 5300 VAC RMS1 minute 7500 VAC PEAK1 minute @ High BVceo minimum 70 valts = Current transfer ratio in selected groups: CNY17-1: CNY17-2: 40%- 80% 63%-125% CNY17-3: 100%-200% CNY17-4: 160%-320% = Maximum switching time in saturation specified = Underwriters Laboratory (UL) recognized File #E90700 = Power supply regulators Digital logic inputs @ Microprocessor inputs m Appliance sensor systems Industrial controls INPUT DIODE Forward DC current .................0..0., 90 mA Reverse voliage .....0 0... cece eee eee 6V Peak forward current (1 ws pulse, 300 pps) .............0.2000.. 3.0A Power dissipation 25C ambient ........... 135 mW Derate linearly from 25C ............... 1.8 mW/C OUTPUT TRANSISTOR Power dissipation @ 25C ..............0. 200 mw Derate linearly from 25C .............. 2.67 mW/C 1-67 OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS CHARACTERISTIC IN. a : TEST CONDITIONS INPUT DIODE Forward voltage VE 1.3 1.50 Vv |-=60 mA Forward voltage temp. AV; coefficient AT, -1.8 mv/C Reverse voltage Va 6.0 15 Vv (p=10 pA Junction capacitance C, 50 pF V,=0 V, f=1 MHz 65 pF V-=1 V, f=1 MHz Reverse leakage current In 35 10 pA Vi=3.0V OUTPUT TRANSISTOR DC forward current gain Nee 100 500 Voe=5 V, le= 100 pA Breakdown voltage Collector to emitter BV ceo 70 v Ik=1.0 mA, -=0 Collector to base BV ono 70 v b=10 BA, =O Emitter to collector BV co 7 Vv =100uA, |-=0 Leakage current Collector to emitter leeo 5 50 nA Vce=10V, I-=0 Collector to base leso 20 nA Vce=10 V, =O Capacitance Collector to emitter 8 . pF Vce=0, f=1 MHz Collector to base 20 pF Voe=5, f=1 MHz Emitter to base 10 pF Vin=0, f=1 MHz DC CHARACTERISTICS SYMBOL . . . TEST CONDITIONS Current Transfer Ratio, collector to emitter CTR =10 MA; V.<=5 V CNY17-1 CNY17-2 CNY17-3 CNY17-4 Saturation voltage Veersan ; : |-=10 mA; |l.=2.5 mA RANSFER CHARACTERISTICS AC CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNITS TEST CONDITIONS SWITCHING TIMES Non-saturated R,=100 9; |le=2 mA; Turn-on time ton 6.0 10 BS co=10V Turn-off time ton 55 10 BS See Fig. 10 and Fig. 11. OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS Ac CHARACTERISTICS SYMBOL - MIN. TYP. MAX. UNITS ~ TEST CONDITIONS SATURATED SWITCHING TIMES Turn-on time ton CNY17-1 3.0 5.5 us (-=20 MA, Voe=0.4 V CNY17-2, CNY17-3, CNY17-4 4.2 8.0 BS I=10 mA, Voe=0.4 V Rise-time t CNY17-4 2.0 4.0 BS 1;=20 MA, Vee=0.4 V CNY17-2, CNY17-3, CNY17-4 3.0 6.0 BS -=10 MA, Voe=0.4 V Turn-off time tor CNY17-1 18 34 BS =20 mA, V.;.=0.4 V CNY17-2, CNY17-3, CNY17-4 23 39 BS le=10 MA, Voc=0.4 V Fall-time t CNY17-1 VW 20 BS l-=20 MA, Voz=0.4 V CNY17-2, CNY17-3, CNY17-4 14 24 us 1-=10 MA, Vce=0.4 V CHARACTERISTICS SYMBOL > > . TEST CONDITIONS Isolation Voltage Visa los pA, 1 minute lo <1 WA, 1 minute Isolation resistance Vic=500 VDC Isolation capacitance . f=1 MHz 0 re _ ELECTRICAL CHARA CTERIS 25C Free Air Temperatur ~ 14 F | | | ay 125 T 3 J Vce = 0.3V = y ele Vee = 5.0V s ae bE 1 y | a 9 6 | | 07s J, < ~~ foam e | ke a La] oO oO | Qo > tu (0.50 & ep 4 N IF $ I) | z & VF 2 0.25 2 o 0.8 ! 2 0.102 05 1 2 5 10 20 50100 0 FORWARD CURRENT Ir (mA) 0 5 10 16 20 C1686 IF (mA) C1679 Fig. 1. Forward Voltage vs. Fig. 2. Normalized CTR vs. Current Forward Current OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS 12 To co 20 _ IF = 10mA> VceE = 0.3V 18 tL j Ip = SmA | Vce = .0V Mog BV = & IF = 2omA | \ 16 na Fie 1.0-~ OF \ I 14 7 ? : Loess, = 12 f, Vce = .4 V zy i 7 7 SS Z VV . f ~ 10 oO / U St a | / ~ 8 yo N 4 al Zz 06 f V7), z vr 4 A g 2-774 0.4 (4 -75 -60 -25 0 +25 +50 +75 +100 +125 012345 67 @930 11 Ta (C) C1680 le (mA) C1243 Fig. 3. Normalized CTR vs. Fig. 4. Collector Current vs. Temperature Forward Current 1.0 1.00 TS | a air ~> yr " g 0.90 . Ce Z 0.90 Y Vaen bay or wl) a = & 2 0.80 | | 3 0.80 A ee | ry Vce = 5V x2 IPL Oe 0.70 v4 +4 of 0.70 YS] ik = 20m 2 0.60 f If = 20mA ~ o6o j tr = joma Ea MA fhe = 10mA - Att it sm 55 0.50 / Ip = 5mA 5 0.50 7 a 0.40 a 0.40 uu N [ [ N / = 0.30 5 0.30 Z | | i g | Zz 0.20 2 0.20 9 2 0.10 Q 90.10 | 0 i 0 i 10K 100K 1M 10K 100K 1M Ree BASE RESISTANCE (0) Ree BASE RESISTANCE (0) C1681 C1682 Fig. 5. CTR vs. RBE (Unsaturated) Fig. 6. CTR vs. RBE (Saturated) 12 4.2 | 4 al & y | ot Ww oa Es Uy antl a f N =| 915 | vie 10 Sat / / NC . / 5 4 So (0.9 < N 2 / a \ Qa | w N Ww N N08 f a 40 | z / Vcc = 10V $s , = f Ig = 2mA 2 Veo = 10V o7 7 R= 1000 7 Io = 2mA 3 ire Fig. 10) z RL = 1002 06 ll | | Ll 0.9 (See Fig. 10) 10K 100K 1M ad 10K 100K 1M rc) Ree BASE RESISTANCE (0) Ree BASE RESISTANCE (2) C1683 C1684 Fig. 7. Normalized Torr vs. RBE Fig. 8. Normalized Toy vs. RBE 1-70 OPTDELECTROWICS NORMALIZED SWITCHING TIME PHOTOTRANSISTOR OPTOCOUPLERS = oO tie tie = ama T Vce = 10V Vec = 10V Ri = 1000 iSee Fig. 10) Qo (ton, totfl 10 Ie imA} C12964 Fig. 9. Switching Time Fig. 10. Switching Time vs. IC Test Circuit PULSE WIDTH = 100 us DUTY CYCLE = 10% 1 ot 1 4 ~~ ton w- tott i C1294 Fig. 11. Switching Time Waveforms