Applications * Transient voltage protection * High-voltage switches * Crowbar * Lasers * Pulse generators 1998 IXYS All rights reserved H-1Single Breakover Diode V3. = 600 - 1000V Lum 6 CODA Vv Standard Bo Vv Types 600 +50 IXBOD 1 -06 800 +50 IXBOD1-08 A gs 900 +50 IXBOD 1 -09 o_[s. K 1000 +50 IXBOD 1 -10 Symbol Test Conditions Ratings Ip Typ = 25C; V = 0,8x Veo 20 HA lrms f = 50 HZ; Tamp = 50C 1.4 A connection pins soldered to printed circuit (conductor 0,035x2mm) Tava 0.9 A Is t, = 0.1 ms; Tamp = 50C 200 A It t, = 0.1 ms; Tamp = 50C 2 As Tamb -40...+125 C Tstg 40...4125 C Dimensions in mm (1 mm = 0.0394") Tj 125 C K, 1-:10% K" 1 Kp 700 K/Ws a5 Rina - natural convection 60 KAW | - with air speed 2 m/s 45 KAW 2 Ith ; po UL Weight 1 g Symbol Test Conditions Characteristic Values * Iso Twp = 25C 15 mA ly Typ = 25C 30 mA o r Vu Twp = 26C 4-8 Vv K. Al (dv/dt), Tey = 50C; Vp = 0.67-(Veo + 100V) > 1000 Vius 9 (di/dt), Typ = 125C; Vo = Veo: |r = 80A; f = 50 Hz 200 A/us . toayp) Typ = 125C Vp = 0.67-Vao; Va = OV 150 Us AV/dteiny = ZOOV/us; ly = 80A; di/dt = -10A/us 08 Vr Ty =125C; |, = 5A 1.7 Vv Vito} For power-loss calculations only 1.1 Vv ry Twp = 125C 0.12 Q IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747 H-2 1998 IXYS All rights reserved0. lu= 200A | el] 47) y didt= 77120 > = ga E, a YZ LAS 40} | 4 | 10 /) Yy, V La 4 20 = Fig. 1 Energy per pulse for trapezoidal current wafeforms MW LZ | (see waveform definition). WY ry | 10 | ly WY ZAC 5 oe MY LA 4 YY | WIND Zs = V La wl tlt LIZ 10 10 10 wus 107 fo | [ls 2008 LE \ ELAR ~ : ZB | E, . YE 50 fT 4 0? Y) OL] _ 40 | V GIA _-| 20 Fig. 2 Energy per pulse for exponentially decaying V// YH \Y La | current pulse (see waveforms definition). / Y/} LAC |} 10-7 V V7 YY a Uy, Yt / Jy | 2 f}/ / AL La [_ 10 / / / / /) 10 10 10' ws 10 20 100 = s oo ho ON woo KAW ho Zina < Ny 1 1 10 100 0,01 0,1 1 10 100 1900 _ i, [A] t [s] Fig. 3 On-state voltage Fig. 4 Transient thermal resistance. 1998 IXYS All rights reserved H-3Breakover Diode Modules version:R -> Version: RD >_> Veo Standard BOD - Veo Standard BOD - Veo Standard BOD - Vv Types Elements Vv Types Elements Vv Types Elements 1200 +50 IXBOD 1 -12R(D) 2 2200 +50 =IXBOD 1 -22R(D) 3 3400 +100 IXBOD 1 -34R 4 1300 +50 IXBOD 1 -13R(D) 2 2300 +50 IXBOD 1 -23R(D) 3 3600 +100 IXBOD 1 -36R 4 1400 +50 IXBOD 1 -14R(D) 2 2400 +50 = IXBOD 1 -24R(D) 3 3800 +100 IXBOD 1 -38R 4 1500 +50 IXBOD 1 -15R(D) 2 2500 +50 IXBOD 1 -25R(D) 3 4000 +100 IXBOD 1 -40R 4 1600 +50 IXBOD 1 -16R(D) 2 2600 +100 IXBOD 1 -26R(D) 3 4200 +100 IXBOD 1 -42R 4 1700 +50 IXBOD 1 -17R(D) 2 2800 +100 IXBOD 1 -28R(D) 3 1800 +50 IXBOD 1 -18R(D) 2 3000 +100 IXBOD 1 -30R(D) 3 1900 +50 IXBOD 1 -19R(D) 2 3200 +100 IXBOD 1 -32R(D) 3 2000 +50 IXBOD 1 -20R(D) 2 2100 +50 IXBOD 1 -21R(D) 2 2-3 BODs Symbol Test Conditions 2 BODs 3 BODs 4 BODs D-Version Ib Tw = 25C:V = 0,8X Vao 100 100 100 100 HA Inms f = 50 HZ; Tamp = 50C 2.0 1.4 1.1 0.3 A connection pins soldered to printed circuit (conductor 0,035x2mm) Laven 1.25 0.9 0.7 0.2 A Ign tp =0.1ms; Tam = 50C 200 200 200 50 A It t,=0.1ms; Tam = 50C 2 2 2 0.125 As V; Twp = 125C; |; = 5A 3.4 5.1 6.8 27 Vv Vito) For power-loss calculations only 2.2 3.3 4.4 17.5 Vv r, Twp = 125C 0.24 0.36 0.48 3 Q Tamb -40...4125 -40...4+125 -40...4125 -40...4125 C Tatg -40...4125 -40...4+125 -40...4125 -40...4125 C Twin 125 125 125 125 C K; 1:10 1:10% 1:10% 1:10 kK" K, 700 700 700 700 KMWs Ringa - natural convection 20 20 20 20 KAW - with air speed 2 m/s 16 16 16 16 KAW Weight typical 14 14 14 14 g Symbol Test Conditions Characteristic Values both Versions R& RD 2 BODs 3 BODs 4 BODs Ibo Tap = 25C 15 15 15 mA la Twp = 26C 30 30 30 mA Vi Tap = 25C 4-8 4-8 4-8 Vv (dv/dt), Twp = 50C; Vp = 0.67-(Va.+ 100V) -Veo bis 1500V > 1000 - - Vius - Veo 1600 - 2000V > 1500 - - Vius - Veo 2100 - 2500V - > 2000 - Vius - Veo 2600 - 3000V - > 2500 - Vius - Vao 3200 - 3400V - - > 3000 Vius - Veo 3600 - 4200V - - > 3500 Vius (di/dt), Typ = 125C; Vo = Veo: Ir = 80A; f = 50 Hz 200 200 200 Alus toeypy Typ = 125C Vp = 0.67-Ve9; Ve = OV 150 150 150 Hs dv/dtiin = 200V/Us; | 80A; di/dt = -10A/us IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747 H-4 1998 IXYS All rights reserved54.5 7.4 Dimensions in mm (1 mm = 0.0394") 10: lw = 200 A 16-| Zs | (me GE Za 80 1 ey a MLE aor | | 10? WY, a 20 | iS MLL 7 40 T MWYY/, LA aa 10 WY 7} LZ XO | YW Lf oo VA DA dae wlll LIZ 10 10 10 wus 10 > t, Fig. 5 Energy per pulse for single BOD element for trapezoidal wave current. E. must be multiplied by number of elements for total energy. IV] 0,1 1 10 r i, Al Fig. 7 On-state voltage at T,,. = 125C. 100 ee ; [ine = 200 MA ~ rane a E, OL <The PAT 40 ] , Uf, KT |_| 20 = Wi tor | 10 YY LZ va 5 T | UY, x / 2 Wf 10 / / / J Z| 10" tor 1 us 10" 100 [KW] Zina 0,1 0,01 p Fig. 6 Energy per pulse for single BOD element for exponentially decaying current pulse. E, must be multiplied by number of elements for total energy. n = number of BOD-Elements in series 0,1 1 10 100 + t [s] 1000 Fig. 8 Transient thermal resistance. 1998 IXYS All rights reservedApplication Protection of thyristors against overvoltages in forward direction. Thyristor Example of a circuit A simple emergency triggering circuit. > Thyristor : Current limiting resistance (0 - 200 Q) : Series-diode (fast recovery diode) : Protection diode : Zener diode, typical V,: 3-6 V : Protection against parasitic triggering; recommended values: R, : 100 - 1000 2 C,: 22- 47 nF 2 : Snubber network of the thyristor Notice 1. ABOD element has a maximum reverse blocking voltage of 10V. 2. For higher reverse voltages a fast, soft recovery diode must be connected in series (Fig. 9). This diode must fulfill the conditions of Fig. 10. Fast recovery BOD single diode or BOD module Fig. 9 BOD protection by a fast recovery diode. R, R, DV | = T BoD // ; Y D, D, C, R, + C, ) \ N 01 us 1 2357 10 t, Fig. 10 Maximum peak value of the reverse current admissible for a given pulse-width t,, which is required for the suitable fast recovery series-diode. IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747 H-6 1998 IXYS All rights reserved