PN3640 MMBT3640 C E C B TO-92 SOT-23 E B Mark: 2J PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 12 VCBO Collector-Base Voltage 12 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic RJC Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation Max Units PN3640 350 2.8 125 *MMBT3640 225 1.8 357 556 mW mW/C C/W C/W PN3640 / MMBT3640 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 10 mA, IB = 0 12 V V(BR)CES Collector-Emitter Breakdown Voltage I C = 100 A, VBE = 0 12 V V(BR)CBO Collector-Base Breakdown Voltage I C = 100 A, I E = 0 12 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 100 A, IC = 0 4.0 V ICES Collector Cutoff Current IB Base Current VCE = 6.0 V, VBE = 0 VCE = 6.0 V, VBE = 0, TA = 65C VCE = 6.0 V, VBE = 0 0.01 1.0 10 A A nA ON CHARACTERISTICS* hFE DC Current Gain VCE( sat) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage IC = 10 mA, VCE = 0.3 V IC = 50 mA, VCE = 1.0 V IC = 10 mA, IB = 0.5 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB= 1.0 mA,T A =65C IC = 10 mA, IB = 0.5 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 30 20 0.75 0.8 120 0.3 0.2 0.6 0.25 0.95 1.0 1.5 V V V V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo Input Capacitance I C = 10 mA, VCE = 5.0 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 1.0 MHz VBE = 0.5 V, IC = 0, f = 1.0 MHz 500 MHz 3.5 pF 3.5 pF SWITCHING CHARACTERISTICS td Delay Time VCC = 6.0 V, VBE( off) = 1.9 V, 10 ns tr Rise Time IC = 50 mA, I B1 = 5.0 mA 20 ns ts Storage Time VCC = 6.0 V, IC = 50 mA, 20 ns tf Fall Time IB1 = IB2 = 5.0 mA 12 ns ton Turn-On Time VCC = 6.0 V, VBE( off) = 1.9 V, IC = 50 mA, I B1 = 5.0 mA 25 ns VCC = 1.5 V, IC = 10 mA, IB1 = IB2 = 0.5 mA 60 ns VCC = 6.0 V, VBE( off) = 1.9 V, IC = 50 mA, I B1 = 5.0 mA 35 ns VCC = 1.5 V, IC = 10 mA, IB1 = IB2 = 0.5 mA 75 ns toff Turn-Off Time *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% PN3640 / MMBT3640 PNP Switching Transistor