PN3640 MMBT3640
PNP Switching Transistor
This device is designed for very high speed saturate switching at
collector currents to 100 mA. Sourced from Process 65. See
PN4258 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
PN3640 *MMBT3640
PDTota l De vice Di ssip atio n
Derate above 25°C350
2.8 225
1.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 12 V
VCBO Collector-Base Voltage 12 V
VEBO Em i t ter - Bas e V olt age 4 . 0 V
ICC ollector Current - Continuous 200 mA
TJ, T stg Operating and Storage Junction Temperature Range -55 to +150 °C
CBETO-92
C
B
E
SOT-23
Mark: 2J
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
PN3640 / MMBT3640
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
PN3640 / MMBT3640
PNP Switching Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Un its
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 012V
V
(BR)CES Collector-Emitter Breakdown Voltage IC = 1 00 µA, V BE = 0 12 V
V(BR)CBO Coll ector -B ase Br eak dow n Voltage IC = 1 00 µA, IE = 0 12 V
V(BR)EBO Em it ter - Bas e B r eakd ow n Voltage IE = 1 00 µA, I C = 0 4.0 V
ICES Colle c tor Cu toff Cu r ren t V CE = 6.0 V, VBE = 0
VCE = 6.0 V, VBE = 0, TA = 65°C0.01
1.0 µA
µA
IBBase Current VCE = 6.0 V, VBE = 0 10 nA
ON CHARACTERISTICS*
hFE DC Cu r rent G ain I C = 10 mA, VCE = 0.3 V
IC = 50 mA, VCE = 1.0 V 30
20 120
VCE(sat)Coll ector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC= 10 mA, I B= 1.0 mA, TA =65°C
0.3
0.2
0.6
0.25
V
V
V
V
VBE(sat)Base-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.75
0.8 0.95
1.0
1.5
V
V
V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V,
f = 10 0 M H z 500 MHz
Cobo Output Capacitance VCB = 5.0 V, IE = 0,
f = 1.0 MHz 3.5 pF
Cibo Input Capacitance VBE = 0.5 V, IC = 0,
f = 1.0 MHz 3.5 pF
SWITCHING CHARACTERISTICS
tdDelay Time VCC = 6.0 V, V BE(off) = 1.9 V, 10 ns
trRise Time IC = 50 mA, IB1 = 5.0 mA 20 ns
tsStor age Ti m e VCC = 6.0 V, I C = 5 0 mA, 20 ns
tfFall Time IB1 = IB2 = 5.0 mA 12 ns
ton Turn-On Time VCC = 6.0 V, V BE(off) = 1.9 V, 25 ns
IC = 50 mA, IB1 = 5.0 mA
VCC = 1.5 V, I C = 1 0 mA, 60 ns
IB1 = IB2 = 0.5 mA
toff Turn-Off Time VCC = 6.0 V, V BE(off) = 1.9 V, 35 ns
IC = 50 mA, IB1 = 5.0 mA
VCC = 1.5 V, I C = 1 0 mA, 75 ns
IB1 = IB2 = 0.5 mA
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
