es Discrete POWER & Signal FAIRCFHILD Technologies ee SEMICONDUCTOR m NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. See MPSAO6 for characteristics. Absol ute Maxi mu m Rati ngs* TA = 25C unless otherwise noted Symbol Parameter Value Units Voeo Collector-Emitter Voltage 80 Vv Voso Collector-Base Voltage 80 Vv VeBo Emitter-Base Voltage 4.0 Vv Io Collector Current - Continuous 500 mA Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol Characteristic Max Units MPSWO06 Pp Total Device Dissipation 1.0 Ww Derate above 25C 8.0 mWw/c Reuc Thermal Resistance, Junction to Case 125 C/W Roga Thermal Resistance, Junction to Ambient 50 C/W * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 om? 1997 Fairchild Semiconductor Corporation 90MSdWN Electrical Characteristics NPN General Purpose Amplifier TA = 25C unless otherwise noted (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Visriceo Collector-Emitter Sustaining Voltage lo= 1.0 mA, Ig =0 80 Vv VieryeBo Emitter-Base Breakdown Voltage le= 100 LA, Ip = 0 4.0 Vv IcEo Collector- Cutoff Current Vee = 60 V, Ip=0 0.1 LA leso Collector- Cutoff Current Ves = 80 V, lE=0 0.1 HA ON CHARACTERISTICS Hee DC Current Gain lo=10mMA, Voce = 1.0 V 100 Ig = 100 MA, Vce = 1.0 V 100 Voevsat) Collector- Emitter Saturation Voltage lo = 100 mA, Ip = 10 MA 0.25 Vv Vee(on) Base-Emitter On Voltage lc = 100 mA, Vce = 1.0 V 1.2 Vv SMALL SIGNAL CHARACTERISTICS f Current Gain - Bandwidth Product lo=10mA, Voge = 2.0 V, 100 MHz f = 100 MHz *Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0% Spice Model NPN (Is=8.324f Xtiz3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 No=2 Isc=0 Ikr=0 Re=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fo=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5 Vtfe4 Xtfe6 Rb=10) 90MSdWN