DATA SH EET
Product specification April 1995
DISCRETE SEMICONDUCTORS
PMBFJ174 to 177
P-channel silicon field-effect
transistors
April 1995 2
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in plastic
microminiature SOT23
envelopes.They are intended for
application with analogue switch es ,
choppers, c ommutators etc. using
SMD technology. A specia l featur e is
the interchangeability of the drain and
source connections.
PINNING
Note
1. Drain and source are
interchangeable.
Marking codes:
1 = drain
2 = source
3=gate
174 : p6X
175 : p6W
176 : p6S
177 : p6Y
Fig.1 Simplified outline and symbol, SOT23.
handbook, halfpage
12
gd
s
3
Top view
MAM386
QUICK REFERENCE DATA
Drain-source voltage VDS max. 30 V
Gate-source voltage VGSO max. 30 V
Gate current IGmax. 50 mA
Total power dissipation
up to Tamb =25 CP
tot max. 300 mW
Drain curr en t
VDS =15 V; V
GS =0
PMBFJ174 175 176 177
IDSS
20
135 7
70 2
35 1,5
20 mA
mA
Drain-source ON-resistance
VDS = 0,1 V; VGS =0 R
DS on 85 125 250 300
April 1995 3
NXP Semiconductors Product specification
P-channel silicon field-ef fect transistors PMBFJ174 to 177
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESIST ANCE
STATIC CH ARA CTERISTICS
Tj=25 C unless otherwise specified
Note
1. Mounted on a ceramic substrate of 8 mm 10 mm 0,7 mm.
Drain-source voltage VDS max. 30 V
Gate-source voltage VGSO max. 30 V
Gate-drain voltage VGDO max. 30 V
Gate current (d.c.) IGmax. 50 mA
Total power dissipation
up to Tamb =25 C(1) Ptot max. 300 mW
Storage temperature range Tstg 65 to 150 C
Junction temperature Tjmax. 150 C
From junction to ambient in free air Rth j-a =430K/W
PMBFJ174 175 176 177
Gate cut- off current
VGS =20 V; V
DS =0 I
GSS 1111nA
Drain cut-off curr ent
VDS = 15 V; VGS = 10 V IDSX 1111nA
Drain curr en t
20
135 7
70 2
35 1,5
20 mA
mA
VDS = 15 V; VGS =0 IDSS
Gate-sourc e breakdown vo ltage
IG=1 A; VDS =0 V
(BR)GSS 30 30 30 30 V
Gate-sourc e cut-off voltage
5
10 3
61
40,8
2,25 V
V
ID= 10 nA; VDS =15 V VGS off
Drain-source ON-resistance
VDS = 0,1 V; VGS =0 R
DS on 85 125 250 300
April 1995 4
NXP Semiconductors Product specification
P-channel silicon field-ef fect transistors PMBFJ174 to 177
DYNAMIC CHARACTERISTICS
Tj=25 C unless otherwise specified
Input capacitance, f = 1 MHz
VGS =10 V; V
DS =0 V C
is typ. 8 pF
VGS =V
DS =0 C
is typ. 30 pF
Feedback capacitance, f = 1 MHz
VGS =10 V; V
DS =0 V C
rs typ. 4 pF
Switching times (see Fig.2 3) PMBFJ174 175 176 177
Delay time tdtyp. 2 5 15 20 ns
Rise time trtyp. 5 10 20 25 ns
Turn-on time ton typ. 7 15 35 45 ns
Storage temperature tstyp. 5 10 15 20 ns
Fall time tftyp. 10 20 20 25 ns
Turn-off time toff typ. 15 30 35 45 ns
Test conditions: VDD 10 6 6 6 V
VGS off 12 8 6 3 V
RL560 1200 2000 2900
VGS on 000 0V
Fig.2 Switching times test circuit
handbook, halfpage
MBK292
RL
50 Ω
D.U.T
50 Ω
Vin
Vout
VDD
Fig.3 Input and output waveforms
tdtr=t
on
tstf=t
off
Rise time input voltage  1 ns
MBK293
VGSoff
INPUT
OUTPUT
ts
tf
90%
10%
10%
90%
10%
90%
td
tr
April 1995 5
NXP Semiconductors Product specification
P-channel silicon field-ef fect transistors PMBFJ174 to 177
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
April 1995 6
NXP Semiconductors Product specification
P-channel silicon field-ef fect transistors PMBFJ174 to 177
DATA SHEET STATUS
Notes
1. Please cons ult the most recently issued do cument before initiating or completin g a d esign.
2. The product status of dev i ce(s) described in this document may ha ve changed since this document was pub lis hed
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
DEFINITIONS
Product specification The information and da ta
provided in a Product data she et shall define the
specification of the product as agre ed between NXP
Semiconductors and its custo m er, unless NXP
Semiconductors and cus to mer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which th e NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconduc tors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
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In no event shall NXP Semiconductors be liable for any
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damages (including - without limitation - lost profits, lost
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Notwithstanding any damages that customer might incur
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reserves the right to make changes to information
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specifications and prod uct descriptions, at any time and
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not designed, authorized or warranted to be suitable for
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property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
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Semiconductors products, and NXP Semiconductors
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customer product design. It is customer’s sole
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Semiconductors pro du ct is su itable and fit for the
customer’s applications and products planned, as well as
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party customer(s). Customers should provide appropriate
design and opera ting safeguards to minimi ze the ris ks
associated with their ap plications and produ cts.
April 1995 7
NXP Semiconductors Product specification
P-channel silicon field-ef fect transistors PMBFJ174 to 177
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s th ird
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semic on ductors produc ts in or de r to
avoid a default of the app lications and th e products or of
the application or use by cust omer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operat ion of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
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Semiconductors products are sold subject to the general
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http://www.nxp.com/profile/terms, unless otherwise
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Li miting values and
Characteristics sections of this document, and as su ch is
not complete, exhaus tive or legally binding.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No cha ng es were made to the technic al co ntent, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R77/02/8 Date of release: April 1995