Bulletin I27133 rev. I 09/04 IRK.105 SERIES ADD-A-pakTM GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Benefits High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500V RMS isolating voltage Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded 105 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. Major Ratings and Characteristics Parameters IRK.105 Units 105 A IO(RMS) (*) 235 A ITSM @ 50Hz 1785 A IFSM @ 60Hz 1870 A @ 50Hz 15.91 KA 2s @ 60Hz 14.52 KA 2s 159.1 KA 2s IT(AV) or I F(AV) @ 85C 2 I t 2 I t VRRM range 400 to 1600 TSTG TJ V - 40 to 150 o C - 40 to130 o C (*) As AC switch. Document Number: 93742 www.vishay.com 1 IRK.105 Series Bulletin I27133 rev. I 09/04 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code - VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V V V 04 400 500 400 06 600 700 600 08 800 900 800 10 1000 1100 1000 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 IRK.105 IRRM IDRM 130C mA 20 On-state Conduction Parameters IT(AV) current (Thyristors) IF(AV) IRK.105 Units Conditions Max. average on-state Max. average forward 180 o conduction, half sine wave, 105 TC = 85oC current (Diodes) IO(RMS) Max. continuous RMS on-state current. As AC switch 235 I(RMS) A ITSM Max. peak, one cycle 1785 t =10ms or non-repetitive on-state 1870 t =8.3ms reapplied IFSM or forward current 1500 t =10ms 1570 t =8.3ms reapplied I2t Max. I 2t for fusing VT(TO) Max. value of threshold voltage (2) Initial TJ = T J max. t =10ms TJ = 25oC, 15.91 t =10ms 14.52 t =8.3ms reapplied KA2s t =10ms No voltage 100% VRRM Initial TJ = TJ max. t =8.3ms reapplied 20.00 t =10ms 18.30 t =8.3ms no voltage reapplied 159.1 0.80 0.85 Max. value of on-state 2.37 2.25 VTM slope resistance (2) Max. peak on-state or VFM forward voltage di/dt Max. non-repetitive rate K A2s V m 1.64 V 150 A/s TJ = 25oC, t = 0.1 to 10ms, no voltage reappl. TJ =TJ max Low level (3) High level (4) Low level (3) High level (4) ITM = x IT(AV) IFM = x IF(AV) TJ = TJ max TJ = TJ max TJ = 25C TJ = 25 o C, from 0.67 VDRM , current I TM = x I T(AV), Ig = 500mA, t r < 0.5 s, t p > 6 s IH Max. holding current 250 IL Max. latching current 400 TJ = 25oC, anode supply = 6V, mA (1) I2t for time t x = I2t x tx 100% VRRM Sinusoidal half wave, t =8.3ms no voltage reapplied rt of rise of turned on No voltage 2000 10.27 Max. I 2t for fusing (1) I(RMS) 2100 11.25 I2t or resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (3) 16.7% x p x IAV < I < p x IAV (4) I > p x IAV Document Number: 93742 www.vishay.com 2 IRK.105 Series Bulletin I27133 rev. I 09/04 Triggering Parameters PGM IRK. 105 Max. peak gate power Conditions 12 PG(AV) Max. average gate power 3 IGM 3 Max. peak gate current -VGM Max. peak negative W A 10 gate voltage VGT Units Max. gate voltage 4.0 required to trigger 2.5 TJ = - 40C V TJ = 25C 1.7 IGT VGD Max. gate current 270 required to trigger 150 TJ = - 40C TJ = 25C mA resistive load Anode supply = 6V resistive load 80 TJ = 125C 0.25 V TJ = 125 C, rated VDRM applied 6 mA TJ = 125oC, rated VDRM applied IRK.105 Units 20 mA Max. gate voltage o that will not trigger IGD TJ = 125C Anode supply = 6V Max. gate current that will not trigger Blocking Parameters IRRM IDRM Conditions Max. peak reverse and off-state leakage current TJ = 130oC, gate open circuit at VRRM, VDRM VINS RMS isolation voltage 2500 (1 min) dv/dt Max. critical rate of rise of off-state voltage (5) 50 Hz, circuit to base, all terminals V 3500 (1 sec) 500 shorted TJ = 130oC, linear to 0.67 VDRM, gate open circuit V/s (5) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. IRKT105/16AS90. Thermal and Mechanical Specifications Parameters IRK.105 TJ Junction operating temperature range - 40 to 130 Tstg Storage temp. range - 40 to 150 Units Conditions C RthJC Max. internal thermal resistance, junction 0.135 Per module, DC operation to case K/W RthCS Typical thermal resistance case to heatsink T Mounting torque 10% busbar Nm 3 Approximate weight 110 (4) Case style A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound 5 to heatsink wt Mounting surface flat, smooth and greased 0.1 gr (oz) TO-240AA JEDEC R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Devices IRK.105 Sine half wave conduction 180o 0.04 120o 0.05 Document Number: 93742 90o 0.06 60o 0.08 Rect. wave conduction 30 o 0.12 180o 0.03 120 o 0.05 90 o 0.06 60 o 0.08 30o 0.12 Units C/ W www.vishay.com 3 IRK.105 Series Bulletin I27133 rev. I 09/04 Ordering Information Table Device Code IRK T 105 1 2 3 / 16 A S90 4 5 6 IRK.106 types With no auxiliary cathode 1 - Module type 2 - Circuit configuration (See Circuit Configuration table below) 3 - Current code * * 4 - Voltage code (See Voltage Ratings table) 5 - A : Gen V 6 - dv/dt code: * * Available with no auxiliary cathode. To specify change: 105 to 106 e.g. : IRKT106/16A etc. S90 = dv/dt 1000 V/s No letter = dv/dt 500 Vs Outline Table Dimensions are in millimeters and [inches] IRKT IRKH (1) ~ (1) ~ + (2) + (2) + (2) (3) (3) (3) G1 K1 (4) (5) IRKN IRKL (1) ~ K2 G2 (7) (6) G1 K1 (4) (5) (1) - (2) + + (3) K2 G2 (7) (6) G1 K1 (4) (5) NOTE: To order the Optional Hardware see Bulletin I27900 Document Number: 93742 www.vishay.com 4 IRK.105 Series IRK.105.. Series R thJC (DC) = 0.27 K/ W 120 110 Conduction Angle 100 90 30 60 80 90 120 180 0 20 40 60 80 100 120 120 RMSLimit 80 60 Conduction Angle 40 IRK.105.. Series Per Junction TJ = 130C 20 Conduction Period 100 90 30 60 90 80 120 70 0 20 40 60 180 DC 80 100 120 140 160 180 20 40 60 80 100 120 200 DC 180 120 90 60 30 180 160 140 120 100 RMSLimit 80 Conduction Period 60 IRK.105.. Series Per Junction T J = 130C 40 20 0 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A) Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics 1600 At Any Rated Load Condition And With Rated VRRM Ap plied Following Surge. Initial TJ= 130C @60 Hz 0.0083 s @50 Hz 0.0100 s 1500 1400 1300 1200 1100 1000 900 IRK.105.. Series Per Junction 800 700 110 Fig. 2 - Current Ratings Characteristics 180 120 90 60 30 0 thJC 120 Fig. 1 - Current Ratings Characteristics 140 0 IRK.105.. Series R (DC) = 0.27 K/ W Average On-state Current (A) 160 100 130 Average On-state Current (A) Maximum Average On-state Power Loss (W) 70 Maximum Allowable Case Temperature (C) 130 1 10 100 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (C) Bulletin I27133 rev. I 09/04 1800 Maximum Non Repetitive Surge Current Versus Pulse Tra in Duration. Control Of Conduc tion May Not Be Maintained. Initial TJ = 130C No Volta ge Reapp lied Rated VRRMReapp lied 1600 1400 1200 1000 800 IRK.105.. Series Per Junction 600 0.01 0.1 1 Number Of Equa l Amplitud e Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 93742 www.vishay.com 5 IRK.105 Series Bulletin I27133 rev. I 09/04 R th 180 120 90 60 30 W K/ ta el -D K/ W R 0.5 K/ W 150 0. 7 Conduction Angle K/ W 1K /W 100 IRK.105.. Series Per Mod ule TJ = 130C 50 0 1 0. 200 0. 3 W K/ 250 = SA 300 2 0. Maximum Tota l On-state Power Loss (W) 350 0 40 80 120 160 200 2 K/W 240 0 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (C) Total RMS Output Current (A) Fig. 7 - On-state Power Loss Characteristics Rt 180 (Sine) 180 (Rec t) 1 0. R 0. 3 ta el -D 0. 2K /W 300 K/ W 0. 5 200 2 x IRK.105.. Series Single Phase Bridge Connec ted TJ = 130C 100 0 W K/ 400 = 500 A hS Maximum Total Power Loss (W) 600 0 40 80 120 160 K/ W 0.7 K/ W 1 K/ W 2 K/ W 0 200 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (C) Total Output Current (A) Fig. 8 - On-state Power Loss Characteristics 800 R 700 SA th Maximum Total Power Loss (W) 900 = 600 120 (Rect) 500 0.2 K/ W 400 K/ W -D el ta R 0.3 K/ W 300 3 x IRK.105.. Series Three Phase Bridge Connec ted TJ = 130C 200 100 0 0. 1 0 40 80 120 160 200 Total Output Current (A) 240 0.5 1 K/ 280 0 K/ W W 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (C) Fig. 9 - On-state Power Loss Characteristics Document Number: 93742 www.vishay.com 6 IRK.105 Series Bulletin I27133 rev. I 09/04 Instantaneous On-state Current (A) 1000 100 TJ= 25C TJ= 130C 10 IRK.105.. Series Per Junction 1 0 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) 700 I TM = 200 A IRK.105.. Series TJ= 125 C 600 Maximum Reverse Recovery Current - Irr (A) Ma ximum Reverse Recovery Charge - Qrr (C) Fig. 10 - On-state Voltage Drop Characteristics 100 A 500 50 A 400 20 A 300 10 A 200 100 10 20 30 40 50 60 70 80 90 100 140 120 J 100 A 100 50 A 80 20 A 10 A 60 40 20 10 Rate Of Fall Of On-state Current - di/ dt (A/ s) 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 12 - Recovery Current Characteristics Fig. 11 - Recovery Charge Characteristics Transient Thermal Impedanc e Z thJC (K/W) I TM = 200 A IRK.105.. Series T = 125 C 1 Steady State Value: R thJC = 0.27 K/ W (DC Operation) 0.1 IRK.105.. Series Per Junc tion 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 13 - Thermal Impedance Z thJC Characteristics Document Number: 93742 www.vishay.com 7 IRK.105 Series Bulletin I27133 rev. I 09/04 Rectangular gate pulse a)Rec ommended load line for rated di/ dt: 20 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Rec ommended load line for <= 30% rated di/ dt: 15 V, 40 ohms tr = 1 s, tp >= 6 s 10 (1) PGM = 200 W, tp = 300 s (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (a) TJ = 125 C 1 TJ = -40 C (b ) TJ = 25 C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 IRK.105.. Series 0.1 1 Frequenc y Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 14- Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 09/04 Document Number: 93742 www.vishay.com 8 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier's Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. International Rectifier(R), IR(R), the IR logo, HEXFET(R), HEXSense(R), HEXDIP(R), DOL(R), INTERO(R), and POWIRTRAIN(R) are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners. Document Number: 99901 Revision: 12-Mar-07 www.vishay.com 1