MULTILAYER CERAMIC CAPACITORS Ultra High Q & Low ESR Series (GUQ) 1. INTRODUCTION MLCC Consists of a conducting material and electrodes. To manufacture a chip-type SMT and achieve miniaturization, high density and high efficiency, ceramic condensers are used. Calchip GUQ series MLCC is used at high frequencies and generally have a small temperature coefficient of capacitance, typical within the +/-30ppm/C required for NPO (COG) classification and have excellent conductivity internal electrode. Thus, Calchip GUQ series MLCC will be with the feature of low EST and high Q characteristics. 2. FEATURES 3. APPLICATIONS a. b. c. d. a. High Q and low ESR performance at high frequency. Ultra low capacitance to 0.1pF. Can offer high precision tolerance to 0.05pF. Quality improvement of telephone calls for low power loss and better performance. b. c. Telecommunication products & equipments: Mobile phone, WLAN, Base station. RF module: Power amplifier, VCO. Tuners. HOW TO ORDER GUQ 10 SERIES SIZE GUQ=Ultra High Q & Low ESR 02=0201 04=0402 10=0603 21=0805 CG DIELECTRIC CG = NP0 (C0G) Calchip Electronics, INC. 59 Steamwhistle Drive, Ivyland, PA. 18974 101 CAPACITANCE Two significant digits followed b no. of zeros. An R is in place of decimal point. eg.: 0R5=0.5pF 1R0=1.0pF 100=10pF J TOLERANCE A=0.05pF B=0.1pF C=0.25pF D=0.5pF F=1% G=2% J=5% 250 N VOLTAGE Two significant digits followed by no. of zeros. And R is in place of decimal point. 25=25 VDC 50=50 VDC 100=100 VDC 250=250 VDC T TERMINATION PACKAGING N=Cu/Ni/Sn T=7" reeled T = 7" reel TD = 13 reel www.calchipelectronics.com ph 215-942-8900 fx 215-942-6400 Ultra High Q & Low ESR Series (GUQ) 5. EXTERNAL DIMENSIONS Size Inch (mm) L (mm) W (mm) 0201 (0603) 0.600.03 0.300.03 0.300.03 0402 (1005) 1.000.05 0.500.05 0603 (1608) 1.600.10 0805 (2012) 2.000.20 Remark MB (mm) L # 0.150.05 0.500.05 N # 0.25+0.05/-0.10 0.800.10 0.800.07 S 0.400.15 1.250.20 0.850.10 T 0.500.20 T (mm)/Symbol L T W MB MB Fig. 1 The outline of MLCC # Reflow soldering only is recommended. 6. GENERAL ELECTRICAL DATA Dielectric NP0 Size 0201, 0402, 0603, 0805 Capacitance* 0201: 0.1pF to 33pF; Capacitance tolerance Cap5pF: A (0.05pF ), B (0.1pF), C (0.25pF) 5pF1000pF. Calchip Electronics, INC. 59 Steamwhistle Drive, Ivyland, PA. 18974 www.calchipelectronics.com ph 215-942-8900 fx 215-942-6400 Ultra High Q & Low ESR Series (GUQ) 7. CAPACITANCE RANGE DIELECTRIC NP0 SIZE Capacitance RATED VOLTAGE (VDC) 0.1pF (0R1) 0.2pF (0R2) 0.3pF (0R3) 0.4pF (0R4) 0.5pF (0R5) 0.6pF (0R6) 0.7pF (0R7) 0.8pF (0R8) 0.9pF (0R9) 1.0pF (1R0) 1.2pF (1R2) 1.5pF (1R5) 1.8pF (1R8) 2.2pF (2R2) 2.7pF (2R7) 3.3pF (3R3) 3.9pF (3R9) 4.7pF (4R7) 5.6pF (5R6) 6.8pF (6R8) 8.2pF (8R2) 10pF (100) 11pF (110) 12pF (120) 13pF (130) 15pF (150) 16pF (160) 18pF (180) 20pF (200) 22pF (220) 24pF (240) 27pF (270) 30pF (300) 33pF (330) 36pF (360) 39pF (390) 43pF (430) 47pF (470) 56pF (560) 68pF (680) 82pF (820) 100pF (101) 0201 0402 0603 6.3 10 25 50 100 L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N N 50 S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S 100 S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S 0805 250 S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S 50 T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T 100 T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T Tolerance 250 B A, B A, B A, B A, B, C A, B, C A, B, C A, B, C A, B, C A, B, C A, B, C A, B, C A, B, C A, B, C A, B, C A, B, C A, B, C A, B, C B, C, D B, C, D B, C, D F, G, J F, G, J F, G, J F, G, J F, G, J F, G, J F, G, J F, G, J F, G, J F, G, J F, G, J F, G, J F, G, J F, G, J F, G, J F, G, J F, G, J F, G, J F, G, J F, G, J F, G, J T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T 1. The letter in cell is expressed the symbol of product thickness. 2. CCE WTC provide E96 (IEC-63) product range with which capacitance10pF. CCE local representative. 3. For more information about products with special capacitance or other data, please contact WTC 8. PACKAGING DIMENSION AND QUANTITY Size Paper tape Thickness (mm)/Symbol 7" reel 13" reel 0201 (0603) 0.300.03 L 15k 70k 0402 (1005) 0.500.05 N 10k 50k 0603 (1608) 0.800.07 S 4k 15k 0805 (2012) 0.850.10 T 4k 15k Unit: pieces Calchip Electronics, INC. 59 Steamwhistle Drive, Ivyland, PA. 18974 www.calchipelectronics.com ph 215-942-8900 fx 215-942-6400 Ultra High Q & Low ESR Series (GUQ) 9. ELECTRICAL CHARACTERISTICS GUQ04, NPO, RF15, NP0,50V 50V 1 1pF ESR () 1.5pF 3.3pF 0.1 6.8pF 0.01 100 1,000 10,000 Frequency (MHz) Fig. 2 ESR vs. Frequency GUQ04, NPO,50V 50V RF15, NP0, 10000 1000 Q 1pF 100 1.5pF 6.8pF 10 1 100 1,000 10,000 Frequency (MHz) Fig. 3 Q vs. Frequency GUQ04, NPO, 50V RF15, NP0, 50V 100000 10000 IZI () 1000 1pF 100 1.5pF 3.3pF 10 6.8pF 1 1 10 100 1,000 10,000 Frequency (MHz) Fig. 4 Impedance vs. Frequency Calchip Electronics, INC. 59 Steamwhistle Drive, Ivyland, PA. 18974 www.calchipelectronics.com ph 215-942-8900 fx 215-942-6400 Ultra High Q & Low ESR Series (GUQ) GUQ02, NPO, 25V RF03, NP0, 25V GUQ04, 50V RF15, NPO, NP0, 50V 25 Measured data (<8.5GHz) Simulation data 25 20 15 10 5 Self resonance frequency (GHz) Self resonance frequency (GHz) 30 Measured data (<8.5GHz) Simulation data 20 15 10 5 0 0 0.1 1 10 100 0.1 1 Capacitance (pF) 10 100 Capacitance (pF) Fig. 5 Self resonance frequency vs. Capacitance (0201 size) Fig. 6 Self resonance frequency vs. Capacitance (0402 size) R F0 3 , NNPO, P0, 2525V V C om p a riso n GUQ02, Comparison R F1 5 , NPO, N P 0, 50 V C Comparison om pa rison GUQ04, 50V 0 0 0.5pF 0.5pF - 20 - 40 1 pF - 60 S11 (dB) S11 (dB) - 20 2 pF - 40 - 60 1 pF 2p F - 80 - 80 -1 00 -100 0.1 1 0. 1 10 1 Fig. 8 S11 vs. frequency. (0402 size) Fig. 7 S11 vs. frequency. (0201 size) R F15,NPO, N P0, 50V om parison GUQ04, 50VCComparison R F0 3 NPO, , N P0, 25V 25 V CComparison om p a riso n GUQ02, 0 0 2 pF 2 pF 1 pF - 20 1p F -2 0 0.5p F 0 .5pF - 40 S21 (dB) S21 (dB) 10 Fre quenc y (G H z) Frequen cy (G H z ) - 60 - 80 -4 0 -6 0 -8 0 -1 00 - 10 0 0 .1 1 F re qu e n cy (G H z ) Fig. 9 S21 vs. frequency. (0201 size) Calchip Electronics, INC. 59 Steamwhistle Drive, Ivyland, PA. 18974 10 0 .1 1 10 F re qu e n cy (GH z) Fig. 10 S21 vs. frequency. (0402 size) www.calchipelectronics.com ph 215-942-8900 fx 215-942-6400 Ultra High Q & Low ESR Series (GUQ) 10. RELIABILITY TEST CONDITIONS AND REQUIREMENTS No. 1. Item Visual and Test Conditions Requirements --- * No remarkable defect. Mechanical 2. 3. * Dimensions to conform to individual specification sheet. Capacitance 1.00.2Vrms, 1MHz10% * Shall not exceed the limits given in the detailed spec. Q/ D.F. At 25C ambient temperature. * Cap30pF, Q1000; Cap<30pF,Q400+20C * To apply voltage: * No evidence of damage or flash over during test. (Dissipation Factor) 4. Dielectric Strength 100V, 250% of rated voltage. 250V, 200% of rated voltage. * Duration: 1 to 5 sec. * Charge and discharge current less than 50mA. 5. To apply rated voltage for max. 120 sec. 10G Temperature With no electrical load. * Capacitance change: within 30ppm/C; Coefficient Operating temperature: -55~125C at 25C Adhesive * Pressurizing force Insulation Resistance 6. 7. Strength of 0201: 2N Termination 0402 & 0603: 5N 0201Cap22pF, within 60ppm/C * No remarkable damage or removal of the terminations. >0603: 10N * Test time: 101 sec. 8. Vibration * Vibration frequency: 10~55 Hz/min. * No remarkable damage. Resistance * Total amplitude: 1.5mm * Cap change and Q/D.F.: To meet initial spec. * Test time: 6 hrs. (Two hrs each in three mutually perpendicular directions.) 9. Solderability * Solder temperature: 2355C 95% min. coverage of all metalized area. * Dipping time: 20.5 sec. 10. Bending Test * The middle part of substrate shall be pressurized by means * No remarkable damage. of the pressurizing rod at a rate of about 1 mm per second until * Cap change: within 5.0% or 0.5pF whichever is larger. the deflection becomes 1 mm and then the pressure shall be (This capacitance change means the change of capacitance under maintained for 51 sec. specified flexure of substrate from the capacitance measured before * Measurement to be made after keeping at room temp. for the test.) 242 hrs. 11. Resistance to * No remarkable damage. * Solder temperature: 2705C Soldering Heat * Dipping time: 101 sec * Cap change: within 2.5% or 0.25pF whichever is larger. * Preheating: 120 to 150C for 1 minute before immerse the * Q/D.F., I.R. and dielectric strength: To meet initial requirements. capacitor in a eutectic solder. * 25% max. leaching on each edge. * Measurement to be made after keeping at room temp. for 242 hrs. 12. Temperature * Conduct the five cycles according to the temperatures and * No remarkable damage. Cycle time. * Cap changewithin 2.5 or 0.25pF whichever is larger. Step Temp. (C) Time (min.) 1 Min. operating temp. +0/-3 2 Room temp. 2~3 3 Max. operating temp. +3/-0 303 4 Room temp. 2~3 * Q/D.F., I.R. and dielectric strength: To meet initial requirements. 303 * Measurement to be made after keeping at room temp. for 242 hrs. Calchip Electronics, INC. 59 Steamwhistle Drive, Ivyland, PA. 18974 www.calchipelectronics.com ph 215-942-8900 fx 215-942-6400 Ultra High Q & Low ESR Series (GUQ) No. 13. Item Test Condition Requirements Humidity * Test temp.: 402C * No remarkable damage. (Damp Heat) * Humidity: 90~95% RH * Cap change: within 5.0% or 0.5pF whichever is larger. Steady State * Test time: 500+24/-0hrs. * Q/D.F. value: Cap30pF, Q350; * Measurement to be made after keeping at room temp. for 10pFCap<30pF, Q275+2.5C 242 hrs. Cap<10pF; Q200+10C * I.R.: 1G. 14. Humidity * Test temp.: 402C * No remarkable damage. (Damp Heat) * Humidity: 90~95%RH * Cap change: within 7.5% or 0.75pF whichever is larger. Load * Test time: 500+24/-0 hrs. * Q/D.F. value: Cap30pF, Q200; * To apply voltagerated voltage Cap<30pF, Q100+10/3C * Measurement to be made after keeping at room temp. for * I.R.: 500M. 242 hrs. 15. High * Test temp.: 1253C * No remarkable damage. Temperature * To apply voltage: 200% of rated voltage. * Cap change: within 3.0% or 0.3pF whichever is larger. Load * Test time: 1000+24/-0 hrs. * Q/D.F. value: Cap30pF, Q350 (Endurance) * Measurement to be made after keeping at room temp. for 10pFCap<30pF, Q275+2.5C 242 hrs. Cap<10pF, Q200+10C * I.R.: 1G. 16. ESR The ESR should be measured at room temperature and tested 0201, 0402 at frequency 10.1 GHz. 0603 0.5pFCap1pF: < 350m 0.3pFCap1pF: < 1500m 1pF