BYG24D thru BYG24J
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Revision: 21-Dec-11 1Document Number: 88960
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Soft recovery characteristics
• Fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.5 A
VRRM 200 V to 600 V
IFSM 30 A
IR1.0 μA
VF1.25 V
trr 140 ns
ER20 mJ
TJ max. 150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG24D BYG24G BYG24J UNIT
Device marking code BYG24D BYG24G BYG24J
Maximum repetitive peak reverse voltage VRRM 200 400 600 V
Average forward current at TA = 65 °C IF(AV) 1.5 A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load IFSM 30 A
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I(BR)R = 1 A, TJ = 25 °C ER20 mJ
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
BYG24D thru BYG24J
www.vishay.com Vishay General Semiconductor
Revision: 21-Dec-11 2Document Number: 88960
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Notes
(1) Mounted on epoxy-glass hard tissue 35 μm x 17 mm2 cooper area per electrode
(2) Mounted on epoxy-glass hard tissue 35 μm x 50 mm2 cooper area per electrode
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 2 - Reverse Current vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BYG24D BYG24G BYG24J UNIT
Minimum breakdown voltage IR = 100 μA VBR 200 400 600 V
Maximum instantaneous
forward voltage
IF = 1 A TJ = 25 °C VF (1) 1.15 V
IF = 1.5 A 1.25
Maximum reverse current VR = VRRM
TJ = 25 °C IR
1µA
TJ = 100 °C 10
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 140 ns
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG24D BYG24G BYG24J UNIT
Junction to case RJC 25 °C/W
Maximum thermal resistance, junction to ambient RJA (1) 150 °C/W
RJA (2) 125
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
BYG24D-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel
BYG24D-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel
BYG24DHE3/TR (1) 0.064 TR 1800 7" diameter plastic tape and reel
BYG24DHE3/TR3 (1) 0.064 TR3 7500 13" diameter plastic tape and reel
0
10
20
30
40
50
60
25 50 75 100 125 150
Reverse Power Dissipation (mW)
Junction Temperature (°C)
V
R
= V
RRM
P
R
- Limit
at 100 % V
R
P
R
- Limit
at 80 % V
R
125 K/W
155 K/W
175 K/W
R
θJA
=
1
10
100
25 50 75 100 125 150
Reverse Current (µA)
Junction Temperature (°C)
V
R
= V
RRM
BYG24D thru BYG24J
www.vishay.com Vishay General Semiconductor
Revision: 21-Dec-11 3Document Number: 88960
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Average Forward Current vs. Ambient Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.01
0.1
1
10
100
0 0.5 1.0 1.5 2.0 2.5 3.0
Forward Voltage (V)
Forward Current (A)
T
J
= 150 °C
T
J
= 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Ambient Temperature (°C)
Average Forward Current (A)
100806040200 120 140 160
VR = VRRM
Half Sine-Wave
RθJA = 25 K/W
RθJA = 125 K/W
RθJA = 150 K/W
0
5
10
15
20
25
30
0.1 1 10 100
Reverse Voltage (V)
Diode Capacitance (pF)
f = 1 MHz
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
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Revision: 12-Mar-12 1Document Number: 91000
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