© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3 1Publication Order Number:
MCR310/D
MCR310 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
Designed for industrial and consumer applications such as
temperature, light and speed control; process and remote controls;
warning systems; capacitive discharge circuits and MPU interface.
•Center Gate Geometry for Uniform Current Density
•All Diffused and Glass-Passivated Junctions for Parameter Uniformity
and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•Low Trigger Currents, 200 mA Maximum for Direct Driving from
Integrated Circuits
•Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Symbol Value Unit
Peak Repetitive Fo r w a r d and Reverse
Blocking Voltage (1)
(TJ = −40 to 110°C)
(1/2 Sine Wave, RGK = 1 kΩ)
MCR310-6
MCR310-8
MCR310-10
VDRM
or
VRRM
400
600
800
Volts
On-State RMS Current (TC = 75°C) IT(RMS) 10 Amps
Peak Non-repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = −40 to 110°C) ITSM 100 Amps
Circuit Fusing (t = 8.3 ms) I2t 40 A2s
Peak Gate Voltage (t p 10 ms) VGM ±5 Volts
Peak Gate Current (t p 10 ms) IGM 1 Amp
Peak Gate Power (t p 10 ms) PGM 5 Watts
Average Gate Power PG(AV) 0.75 Watt
Operating Junction Temperature Range TJ−40 to +110 °C
Storage Temperature Range Tstg −40 to +150 °C
Mounting To r que − 8 in.-lb.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
T h e r m a l Resistance, Junction to Case RθJC 2.2 °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCRs
10 AMPERES RMS
400 thru 800 VOLTS
Device Package Shipping
ORDERING INFORMATION
MCR310−6 TO220AB 500/Box
MCR310−8 TO220AB
MCR310−10 TO220AB
500/Box
500/Box
C
G
A
TO−220AB
CASE 221A
STYLE 3
123
4
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MARKING
DIAGRAM
x = 6, 8 or 10
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MCR310−6G TO220AB
(Pb−Free) 500/Box
MCR310−8G TO220AB
(Pb−Free) 500/Box
MCR310−10G TO220AB
(Pb−Free) 500/Box
MCR310−xG
AYWW
Preferred devices are recommended choices for future use
and best overall value.
MCR310 Series
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1 kΩ unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Peak Forward Blocking Current(1) TC = 110°C
(TJ = 110°C, VD = Rated VDRM)T
C = 25°CIDRM —
——
—500
10 mA
mA
Peak Reverse Blocking Current(1) TC = 110°C
(TJ = 110°C, VR = Rated VRRM)T
C = 25°CIRRM —
——
—500
10 mA
mA
On-State Voltage
(ITM = 20 A Peak, Pulse Width p 1 ms, Duty Cycle p 2%) VTM — 1.7 2.2 Volts
Gate Trigger Current, Continuous dc(2)
(VD = 12 V, RL = 100 Ω)IGT — 30 200 mA
Gate Trigger Voltage, Continuous dc
(VD = 12 V, RL = 100 Ω)
(VD = Rated VDRM, RL = 10 kΩ, TJ = 110°C)
VGT —
0.1 0.5
—1.5
—
Volts
Holding Current
(VD = 12 V, ITM = 100 mA) IH— — 6 mA
Critical Rate of Rise of Forward Blocking Voltage
(VD = Rated VDRM, TJ = 110°C, Exponential Waveform) dv/dt — 10 — V/ms
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 20 A, IG = 2 mA) tgt — 1 — ms
1. Ratings a pply f or n egative gate v oltage o r RGK = 1 kΩ. D evices s hall not h ave a p ositive g ate v oltage concurrently w ith a n egative v oltage
on the a node. Devices should n ot be t ested with a constant current source f or forward and r everse blocking capability such that the
voltage applied exc eeds the rated bloc king voltage.
2. Does not include RGK current.
Figure 1. Average Current Derating Figure 2. On-State Power Dissipation
Figure 3. Normalized Gate Current Figure 4. Gate Voltage
0.3
120
0.5
1
2
−40 −20 0 20 40 60 80 90 100
3
140
VD = 12 Vdc
8
TJ, JUNCTION TEMPERATURE (°C)
024
110
6
70
80
90
100
10
120
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
α = 30°
180°
dc
α = CONDUCTION ANGLE
0.6
α
0.1
0.2
0.3
0.4
0.5
40
0.7
−60 −40 −20 0 10020 60 80 120
VD = 12 Vdc
02 4 6 8
16
TJ, JUNCTION TEMPERATURE (°C)
0
4
8
12
20
α
α = CONDUCTION ANGLE
10
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
90
°
180°
dc
T , MAXIMUM CASE TEMPERATURE ( C)
C°NORMALIZED GATE CURRENT
P , AVERAGE POWER DISSIPATION (WATTS)
AV
V , GATE TRIGGER VOLTAGE (VOLTS)
GT
60°
α = 30°
60
°90°
MCR310 Series
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PACKAGE DIMENSIONS
TO−220AB
CASE 221A−07
ISSUE AA
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 −−− 1.15 −−−
Z−−− 0.080 −−− 2.04
A
K
L
V
GD
N
Z
H
Q
FB
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4
−T− SEATING
PLANE
S
R
J
U
TC
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MCR310/D
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