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MOS FIELD EFFECT TRANSISTOR
2SK4035
SWITCHING
N-CHANNEL POWER MOSFET
DATA SHEET
Document No. D17447EJ1V0DS00 (1st edition)
Date Published July 2005 NS CP(K)
Printed in Japan
2005
DESCRIPTION
2SK4035 is the best switching element for the DC-DC
converter usage from 24 to 48 V in the direct current input
voltage. It excels in the switching characteristics in low on-state
resistance and because it is the small size surface mounting
externals, is the best for the high-speed switching usage of the
equipment that promotes the automation of space-saving and
mounting.
FEATURES
• Low input capacitance
C
iss = 74 pF TYP.
• Low on-state resistance
R
DS(on) = 4.5 Ω MAX. (VGS = 10 V, ID = 0.25 A)
• Small and surface mount package (SC-96)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK4035 SC-96 (Mini Mold Thin Type)
2SK4035-A Note SC-96 (Mini Mold Thin Type)
Note Pb-free (This product does not contain Pb in external
electrode and other parts.)
Marking: XP
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 250 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) (TA = 25°C) ID(DC) ±0.5 A
Drain Current (pulse) Note1 ID(pulse) ±2.0 A
Total Power Dissipation (TA = 25°C) PT1 0.2 W
Total Power Dissipation (TA = 25°C) Note2 PT2 1.25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Notes 1. PW ≤ 10
µ
s, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t ≤ 5 sec
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
0.4
+0.1
–0.05
2.8 ±0.2
1.5
0.95
1.9
2.9 ±0.2
0.95
0.65
+0.1
–0.15
1. Gate
2. Source
3. Drain
21
3
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet D17447EJ1V0DS
2
2SK4035
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V 10
µ
A
Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10
µ
A
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1.0 mA 2.5 3.5 4.5 V
Forward Transfer Admittance Note | yfs | VDS = 10 V, ID = 0.25 A 0.2 0.5 S
Drain to Source On-state Resistance Note RDS(on) VGS = 10 V, ID = 0.25 A 3.2 4.5 Ω
Input Capacitance Ciss VDS = 10 V 74 pF
Output Capacitance Coss VGS = 0 V 16 pF
Reverse Transfer Capacitance Crss f = 1.0 MHz 7 pF
Turn-on Delay Time td(on) VDD = 125 V, ID = 0.25 A 7 ns
Rise Time tr VGS = 10 V 5 ns
Turn-off Delay Time td(off) RG = 10 Ω 12 ns
Fall Time tf 40 ns
Total Gate Charge QG VDD = 200 V 4 nC
Gate to Source Charge QGS VGS = 10 V 0.9 nC
Gate to Drain Charge QGD ID = 0.5 A 2 nC
Body Diode Forward Voltage Note VF(S-D) IF = 0.5 A, VGS = 0 V 0.84 V
Reverse Recovery Time trr IF = 0.5 A, VGS = 0 V 42 ns
Reverse Recovery Charge Qrr di/dt = 100 A/
µ
s 57 nC
Note Pulsed
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG. R
G
0
V
GS
D.U.T.
R
L
V
DD
τ = 1 s
µ
Duty Cycle ≤ 1%
τ
PG. 50 Ω
D.U.T.
R
L
V
DD
I
G
= 2 mA
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10% 10%
Data Sheet D17447EJ1V0DS 3
2SK4035
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
PT - Total Power Dissipation - W
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0 25 50 75 100 125 150 175
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mm,
t ≤ 5 sec
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
0.001
0.01
0.1
1
10
0.01 0.1 1 10 100 1000
I
D(pulse)
I
D(DC)
Single pulse
Mounted on FR-4 board o
f
50 mm x 50 mm x 1.6 mm
R
DS(on)
Limited
(at V
GS
= 10 V)
Power Dissipation Limited (5s)
10 ms
PW = 1 ms
100 ms
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(ch-A) - Transient Thermal Resistance - °C/W
0.1
1
10
100
1000
Without board
Single pulse
Mounted on FR-4 board o
f
50 mm x 50 mm x 1.6 mm
PW - Pulse Width - s
1 m 10 m 100 m 1 10 100 1000
Data Sheet D17447EJ1V0DS
4
2SK4035
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
0
1
2
0246810
V
GS
= 10 V
Pulsed
VDS - Drain to Source Voltage - V
ID - Drain Current - A
0.00001
0.0001
0.001
0.01
0.1
1
10
0 5 10 15
TA = −55°C
−25°C
25°C
75°C
125°C
150°C
VDS = 10 V
Pulsed
V
GS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
VGS(off) - Gate Cut-off Voltage - V
0
1
2
3
4
5
6
7
-75 -25 25 75 125 175
V
DS
= 10 V
I
D
= 1 mA
Tch - Channel Temperature - °C
| yfs | - Forward Transfer Admittance - S
0.01
0.1
1
10
0.01 0.1 1 10
75°C
125°C
150°C
V
DS
= 10 V
Pulsed
T
A
= −55°C
−25°C
25°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance -
Ω
0
1
2
3
4
5
6
7
8
0.01 0.1 1 10
V
GS
= 10 V
Pulsed
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - Ω
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25 30
ID = 0.25 A
Pulsed
VGS - Gate to Source Voltage - V
Data Sheet D17447EJ1V0DS 5
2SK4035
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance -
Ω
0
1
2
3
4
5
6
7
8
-75 -25 25 75 125 175
V
GS
= 10 V
I
D
= 0.25 A
Pulsed
Tch - Channel Temperature - °C
Ciss, Coss, Crss - Capacitance - pF
1
10
100
1000
0.01 0.1 1 10 100 1000
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
V
DS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
1
10
100
0.1 1 10
V
GS
= 10 V
V
DD
= 125 V
R
G
= 10 Ω
t
d(off)
t
d(on)
t
f
t
r
I
D - Drain Current - A
VDS - Drain to Source Voltage - V
0
50
100
150
200
012345
0
2
4
6
8
10
VDS
VDD = 200 V
125 V
50 V
ID = 0.5 A
VGS
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
IF - Diode Forward Current - A
0.01
0.1
1
10
00.511.5
V
GS
= 0 V
Pulsed
VF(S-D) - Source to Drain Voltage - V
trr - Reverse Recovery Time - ns
1
10
100
1000
0.1 1 10
di/dt = 100 A/µs
V
GS
= 0 V
IF - Diode Forward Current - A
2SK4035
The information in this document is current as of July, 2005. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1
