PMBT2907AQAZ - NEXPERIA - Datasheet.Directory

PMBT2907AQA

60V, 600 mA PNP switching transistor

21 September 2018 Product data sheet

1. General description

PNP switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-Mounted

Device (SMD) plastic package with visible and solderable side pads.

NPN complement: PMBT2222AQA

2. Features and benefits

•High current (max. 600 mA)

•Low voltage (max. 60V)

•Leadless ultra small SMD plastic package

•Low package height of 0.37 mm

•Suitable for Automatic Optical Inspection (AOI) of solder joint

•AEC-Q101 qualified

3. Applications

•Switching and linear applications

•Mobile applications

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter

voltage

open base - - -60 V

ICcollector current - - -600 mA

ICM peak collector current single pulse; tp ≤ 1 ms - - -800 mA

VCE = -10 V; IC = -150 mA [1] 100 - 300 hFE DC current gain

VCE = -10 V; IC = -500 mA [1] 50 - -

[1] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02

Nexperia PMBT2907AQA

60V, 600 mA PNP switching transistor

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 B base

2 E emitter

3 C collector

4 C collector

Transparent top view

DFN1010D-3

(SOT1215)

sym132

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PMBT2907AQA DFN1010D-3 plastic, leadless thermal enhanced ultra thin small outline

package; 3 terminals; 0.75 mm pitch; 1.1 mm x 1 mm x 0.37 mm

body

SOT1215

7. Marking

Table 4. Marking codes

Type number Marking code

PMBT2907AQA X 101

MARKING CODE

(EXAMPLE)

PIN 1

INDICATION MARK VENDOR CODE

YEAR DATE

CODE

READING

DIRECTION

READING EXAMPLE:

aaa-020723

MARK-FREE AREA

A 110

Fig. 1. DFN1010D-3 (SOT1215) binary marking code description

Product data sheet 21 September 2018 2 / 14

Nexperia PMBT2907AQA

60V, 600 mA PNP switching transistor

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - -60 V

VCEO collector-emitter voltage open base - -60 V

VEBO emitter-base voltage open collector - -5 V

ICcollector current - -600 mA

ICM peak collector current - -800 mA

IBM peak base current

single pulse; tp ≤ 1 ms

- -200 mA

[1] - 325 mW

[2] - 575 mW

[3] - 525 mW

Ptot total power dissipation Tamb ≤ 25 °C

[4] - 940 mW

Tjjunction temperature - 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated; mounting pad for collector 1 cm2.

[3] Device mounted on an FR4 Printed-Circuit Board (PCB), 4-layer copper, tin-plated and standard footprint.

[4] Device mounted on an FR4 Printed-Circuit Board (PCB), 4-layer copper, tin-plated; mounting pad for collector 1 cm2.

Tamb (ºC)

-75 17512525 75-25

aaa-020246

0.4

0.6

0.2

0.8

Ptot

(W)

(1)

(3)

(2)

(4)

(1) FR4 PCB, 4-layer copper, 1 cm2

(2) FR4 PCB,single sided copper, 1 cm2

(3) FR4 PCB, 4-layer copper, standard footprint

(4) FR4 PCB, single sided copper, standard footprint

Fig. 2. Power derating curve DFN1010D-3 (SOT1215)

Product data sheet 21 September 2018 3 / 14

Nexperia PMBT2907AQA

60V, 600 mA PNP switching transistor

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

in free air [1] - - 385 K/W

[2] - - 218 K/W

[3] - - 239 K/W

Rth(j-a) thermal resistance from

junction to ambient

[4] - - 133 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated; mounting pad for collector 1 cm2.

[3] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.

[4] Device mounted on an FR4 Printed-Circuit Board (PCB), 4-layer copper, tin-plated; mounting pad for collector 1 cm2.

aaa-020247

tp (s)

10-5 103

10-4 10-3 10-2 10-1 1 10 102

103

Zth(j-a)

(K/W)

102

0.75

duty cycle = 1

0.5

0.2

0.05

0.01

0.33

0.1

0.02

FR4 PCB, single-sided copper, tin-plated and standard footprint

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

aaa-020248

tp (s)

10-5 103

10-4 10-3 10-2 10-1 1 10 102

103

102

Zth(j-a)

(K/W)

0.75

duty cycle = 1

0.5

0.2

0.05

0.01

0.33

0.1

0.02

FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Product data sheet 21 September 2018 4 / 14

Nexperia PMBT2907AQA

60V, 600 mA PNP switching transistor

aaa-020250

tp (s)

10-5 103

10-4 10-3 10-2 10-1 1 10 102

103

102

Zth(j-a)

(K/W)

0.75

duty cycle = 1

0.5

0.2

0.05

0.01

0.33

0.1

0.02

FR4 PCB, 4-layer copper, tin-plated and standard footprint

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

aaa-020249

tp (s)

10-5 103

10-4 10-3 10-2 10-1 1 10 102

103

102

Zth(j-a)

(K/W)

0.75

duty cycle = 1

0.5

0.2

0.05

0.01

0.33

0.1

0.02

FR4 PCB, 4-layer copper, tin-plated; mounting pad for collector 1 cm2

Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Product data sheet 21 September 2018 5 / 14

Nexperia PMBT2907AQA

60V, 600 mA PNP switching transistor

10. Characteristics

Table 7. Characteristics

Tamb = 25 °C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

V(BR)CBO collector-base

breakdown voltage

IC = -100 µA; IE = 0 A -60 - - V

V(BR)CEO collector-emitter

breakdown voltage

IC = -2 mA; IB = 0 A -60 - - V

V(BR)EBO emitter-base

breakdown voltage

IC = 0 A; IE = -100 µA -5 - - V

VCB = -50 V; IE = 0 A - - -10 nAICBO collector-base cut-off

current VCB = -50 V; IE = 0 A; Tj = 125 °C - - -10 µA

IEBO emitter-base cut-off

current

VEB = -5 V; IC = 0 A - - -50 nA

VCE = -10 V; IC = -100 µA 75 - -

VCE = -10 V; IC = -1 mA 100 - -

VCE = -10 V; IC = -10 mA 100 - -

VCE = -10 V; IC = -150 mA [1] 100 - 300

hFE DC current gain

VCE = -10 V; IC = -500 mA [1] 50 - -

IC = -150 mA; IB = -15 mA [1] - - -400 mVVCEsat collector-emitter

saturation voltage IC = -500 mA; IB = -50 mA [1] - - -1.6 V

IC = -150 mA; IB = -15 mA [1] - - -1.3 VVBEsat base-emitter saturation

voltage IC = -500 mA; IB = -50 mA [1] - - -2.6 V

tddelay time - - 15 ns

trrise time - - 30 ns

ton turn-on time - - 45 ns

tsstorage time - - 300 ns

tffall time - - 65 ns

toff turn-off time

IC = -150 mA; IBon = -15 mA;

IBoff = 15 mA

- - 365 ns

Cccollector capacitance VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz

- - 8 pF

Ceemitter capacitance VEB = -2 V; IC = 0 A; ic = 0 A; f = 1 MHz - - 30 pF

fTtransition frequency VCE = -20 V; IC = -50 mA; f = 100 MHz [1] - 210 - MHz

[1] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02

Product data sheet 21 September 2018 6 / 14

Nexperia PMBT2907AQA

60V, 600 mA PNP switching transistor

aaa-014480

200

100

300

400

hFE

(

)

-10-1 -103

-102

-1 -10

(1)

(2)

(3)

VCE = -10 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 7. DC current gain as a function of collector

current; typical values

VCE (V)

0 -10-8-4 -6-2

aaa-014481

-0.4

-0.6

-0.2

-0.8

-1

(A)

-2

-4

-6

-8

-10

-12

-14

-16

IB = -20 mA

-18

Tamb = 25 °C

Fig. 8. Collector current as a function of collector-

emitter voltage; typical values

aaa-014482

-0.4

-0.8

-1.2

VBE

(V)

IC (mA)

-10-1 -103

-102

-1 -10

(1)

(2)

(3)

VCE = -10 V

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig. 9. Base-emitter voltage as a function of collector

current; typical values

aaa-014483

-0.6

-0.8

-0.4

-1.0

-1.2

VBEsat

(V)

-0.2

IC (mA)

-10-1 -103

-102

-1 -10

(3)

(2)

(1)

IC/IB = 10

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig. 10. Base-emitter saturation voltage as a function of

collector current; typical values

Product data sheet 21 September 2018 7 / 14

Nexperia PMBT2907AQA

60V, 600 mA PNP switching transistor

aaa-014484

IC (mA)

-10-1 -103

-102

-1 -10

-10-1

-1

VCEsat

(V)

-10-2

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 11. Collector-emitter saturation voltage as a

function of collector current; typical values

aaa-014699

IC (mA)

-10-1 -103

-102

-1 -10

-10-1

-1

VCEsat

(V)

-10-2

(1)

(2)

(3)

Tamb = 25 °C

(1) IC/IB = 100

(2) IC/IB = 50

(3) IC/IB = 10

Fig. 12. Collector-emitter saturation voltage as a

function of collector current; typical values

11. Test information

006aaa266

-IBon (100 %)

-IB

input pulse

(idealized waveform)

-IBoff

90 %

10 %

-IC (100 %)

-IC

ton

90 %

10 %

output pulse

(idealized waveform)

toff

Fig. 13. Transistor switching time definition

Product data sheet 21 September 2018 8 / 14

Nexperia PMBT2907AQA

60V, 600 mA PNP switching transistor

DUT

mgd624

(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

VBB

VCC

Fig. 14. Test circuit for switching times

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

Product data sheet 21 September 2018 9 / 14

Nexperia PMBT2907AQA

60V, 600 mA PNP switching transistor

12. Package outline

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT1215

sot1215_po

13-03-05

13-03-06

Unit

min

nom

max

0.245 1.05

0.1

Dimensions (mm are the original dimensions)

Note

1. Dimension A is including plating thickness.

DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads;

3 terminals; body: 1.1 x 1.0 x 0.37 mm SOT1215

A1b

0.22

b1D E1e e1

0.20 0.225

0.25 0.275

0.17 0.195

0.16

0.240.40

0.37

0.34

0.04 0.325

0.275

1.150.30

0.25

scale

0 1 mm

0.87

0.95

D1E

0.95

1.05

0.750.191.10 0.90 1.00

b (2x)

pin 1

index area

solderable lead

end, protrusion

max. 0.02 mm (3x)

visible depend upon

used manufacturing

technology (2x)

visible depend upon

used manufacturing

technology (4x)

D b1

L (2x)

Fig. 15. Package outline DFN1010D-3 (SOT1215)

Product data sheet 21 September 2018 10 / 14

Nexperia PMBT2907AQA

60V, 600 mA PNP switching transistor

13. Soldering

SOT1215Footprint information for reflow soldering of DFN1010D-3 package

sot1215_fr

solder land

solder resist

solder land plus solder paste

occupied area

Dimensions in mm

Issue date 12-11-23

13-03-06

0.3

0.75

1.1

0.4

0.35 (2x)

0.45 (2x) 0.3

1.2

0.25 (2x)

0.5

0.4

0.5

1.41.5

0.3

0.4

0.5

1.3

0.4

0.5 1.3

Fig. 16. Reflow soldering footprint for DFN1010D-3 (SOT1215)

Product data sheet 21 September 2018 11 / 14

Nexperia PMBT2907AQA

60V, 600 mA PNP switching transistor

14. Revision history

Table 8. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

PMBT2907AQA v.1 20180921 Product data sheet - -

Product data sheet 21 September 2018 12 / 14

Nexperia PMBT2907AQA

60V, 600 mA PNP switching transistor

15. Legal information

Data sheet status

Document status

[1][2]

Product

status [3]

Definition

Objective [short]

data sheet

Development This document contains data from

the objective specification for

product development.

Preliminary [short]

data sheet

Qualification This document contains data from

the preliminary specification.

Product [short]

data sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the internet at https://www.nexperia.com.

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warranties as to the accuracy or completeness of information included herein

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product data given in the Limiting values and Characteristics sections of this

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or warranty that such applications will be suitable for the specified use

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Customers are responsible for the design and operation of their applications

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

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Product data sheet 21 September 2018 13 / 14

Nexperia PMBT2907AQA

60V, 600 mA PNP switching transistor

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking.......................................................................... 2

8. Limiting values............................................................. 3

9. Thermal characteristics............................................... 4

10. Characteristics............................................................ 6

11. Test information.......................................................... 8

12. Package outline........................................................ 10

13. Soldering................................................................... 11

14. Revision history........................................................12

15. Legal information......................................................13

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 21 September 2018

Product data sheet 21 September 2018 14 / 14