2SC5692
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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5692
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
• High DC current gain: hFE = 400 to 1000 (IC = 0.3 A)
• Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)
• High-speed switching: tf = 120 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 100 V
Collector-emitter voltage VCEX 80 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 7 V
DC IC 2.5
Collector current
Pulse ICP 4.0
A
Base current IB 250 mA
DC 625
Collector power
dissipation t = 10 s
PC
(Note 1) 1000
mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3S1C
Weight: 0.01 g (typ.)
Start of commercial production
2000-05
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 100 V, IE = 0 ⎯ ⎯ 100 nA
Emitter cut-off current IEBO V
EB = 7 V, IC = 0 ⎯ ⎯ 100 nA
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ⎯ ⎯ V
hFE (1) VCE = 2 V, IC = 0.3 A 400 ⎯ 1000
DC current gain
hFE (2) VCE = 2 V, IC = 1 A 200 ⎯ ⎯
Collector-emitter saturation voltage VCE (sat) I
C = 1 A, IB = 20 mA ⎯ ⎯ 0.14 V
Base-emitter saturation voltage VBE (sat) I
C = 1 A, IB = 20 mA ⎯ ⎯ 1.10 V
Collector output capacitance Cob V
CB = 10 V, IE = 0, f = 1 MHz ⎯ 13 ⎯ pF
Rise time tr ⎯ 40 ⎯
Storage time tstg ⎯ 500 ⎯
Switching time
Fall time tf
See Figure 1.
VCC
∼
−
30 V, RL = 30 Ω
IB1 = −IB2 = 33.3 mA ⎯ 120 ⎯
ns
Marking
W B
Part No. (or abbreviation code)
Lot code (month)
Lot code (year)
Dot: even year
No dot: odd year
Figure 1 Switching Time Test Circuit &
Timin
g
Chart
IB2
IB1
20 μs
Output
Input
IB2
IB1
RL
VCC
Duty cycle < 1%
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Base-emitter voltage VBE (V)
Collector current IC (A)
Base-emitter saturation voltage
VBE (sat) (V)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Collector current IC (A)
hFE – IC
DC current gain hFE
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (A)
VBE (sat) – IC
IC – VBE
10000
0.001
1000
100
10
0.01 0.1 1 10
Common emitter
VCE = 2 V
Single nonrepetitive
pulse
Ta = 100°C
25 −55
0.001 0.01 0.1 1 10
10
0.1
1
25
Common emitter
IC/IB = 50
Single nonrepetitive pulse
100
Ta = −55°C
0.001
1
0.1
0.01
0.001 0.01 0.1 1 10
Common emitter
IC/IB = 50
Single nonrepetitive
pulse
25
−55
Ta = 100°C
0
0
Common emitter
Ta = 25°C
Single nonrepetitive pulse
3
2.5
2
1.5
1
0.5
0.2
70 50 40
30
20
10
5
IB = 1 mA
0.4 0.6 1 0.8
60
Common emitter
VCE = 2 V
Single nonrepetitive
pulse
0
0.4 0.8 1.2 1.6
0
3
2
1
Ta = 100°C 25
−55
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Collector-emitter voltage VCE (V)
Collector current IC (A)
Transient Thermal Resistance rth – tw
Pulse width tw (s)
Transient thermal resistance
rth (°C/W)
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm2)
1000
1
0.001
100
10
0.01 0.1 1 10 100 1000
Safe Operating Area
10
0.01
0.1 1 10 100
0.1
1
IC max (pulsed) ♦
DC operation *
(Ta = 25°C)
VCEO max
10 μs♦
100 μs♦ 1 ms♦
100 ms♦*
10 ms♦
10 s♦*
♦: Single nonrepetitive pulse
Ta = 25°C
Note that the curves for 100 ms*,
10 s* and DC operation* will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm2). These characteristic
curves must be derated linearly
with increase in temperature.
IC max (continuous)
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