SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A Z % RT ... Replacement Type; consult manufacturer. Indicators of separate manufacturers producing same type number (non-JEDEC) whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.1.A.) is an integral part of the type number {in Type No. Cross Index, Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others. SYMBOLS & CODES COMMON TO MORE THAN ONE TECHNICAL SECTION LINE No. Vv New Type Revised Specifications # Non-JEDEC Type manufactured t_ @- TYPE No. outside U.S.A. i 6 , i LINE TYPE OLL. IN |M E[BVel No. No. DISS. | fab [FREE |A M @25C AIR. [XP Ww we vi ; @ With infinite heat sink Following symbols indicate temperature at which derating starts: T- 40c i- ec = 100% * 45C - 7C 4 Min. #-~ 50C =A 85C T- tae Gain bandwidth product (f,) %* Maximum frequency of oscillation QD ~ Figure of merit (frequency for unity power gain} A Minimum Z- Maximum Q ~ With infinite heat sink E * 50-65C A Ambient 70-80c C Case # - 85-100C J Junction # 110-125C S Storage T 130-135C $ 140-165C 170-200C Over 200C STRUCTURE (All Sections A Alloy Except 6 & 7} Switching type, also listed in Section 12 AN Annular - a . . D ~ Diffused or drift Chopper, also listed in Section 13, Category 10 pM Diftused These types also included elsewhere with other E 7 E, tons fee characteristics. See Type No. Cross Index for pt axial : EA Epitaxial annular alternate line no. EM Epitaxial mesa Radiation Resistant Devices, also listed in FE _ Feeed Section 13, Category 13, G ~ Grown GA Gallium Arsenide H Hometaxial MA Mico alloy MD Micro alloy diffused ME Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alioy diffused PE Ptanar epitaxial PL Planar Ss Surface barrier * Matched pair A Switching, other uses Z Chopper, other uses Z Noise figure 8db or below t Plastic package % Overlay ye i \ I ' Mai , cao |BVebo | Icbo. BIAS Cob |STRUC|Y200 le 0 le @MAX! Veb le hfe hoe hie hre -TURE | s/a JAD Veb TO200/D E Vv) A) Al Vv (A) mh 1 Ser, 9 fe QD lo A- lp b h parameters are Pope Pine Mb 74] Maximum D Vee 0) t- Nee A Minimum Pulsed Maximum At Va, Max. V., (See Mfr. Spec.) # aise 68 CB 8 hee Typical CEX yptca %* Available in selected ranges -1 * ~ 'cER CES AtTemp.> 28 =A 'cEO ~ AtTemp. 25C Case # Pulsed or Peak ~ i hb - q iis 7] Maximum $ Co T-c, $ Minimum po $ Tetrode # - BVcex or punch-through D av # Radiation Resistant Device CES (A - BV eo (sus) {Also See Above) .- BVoER * Pulsed $- Indicates min. valves given for BY cb, EV ceo, and BV abo, LINE TYPE No. No. CK790 CK721 CK727 FSP270-1 BCZ14 2N1135A 2N1607 2N1608 TNT1131 2N2904/TNT SA496 SA537 NS665 NS668 NS6211D SA52 SA70t 2N21 JAN2N495 SAS4 SAC40D SAC4 $500 2SA542 NS6062 NS6065 2N2303/51 c6 MCS2137 BCIS6VI BCW61Ct M4 M7 BFS32P NS6205 DISS. @25C 2.0m 4.0m 4.0m 75m m 85m 100m 100m 100m 100m 100m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 450m* 150m* * 150m 180m 150m 150m IN |ME fab FREE j|A M AIR 150M u 500KA |833u 5.6M$8A |(870u 10MSA|870u 25M5A|870u 6OMA|\666u 96.MA |556u 1.0MSA 1.0M5A 3.0M8A 40M5A 4.0MSA 4.0M5A 6.0MSA |1.3m 8.0MA | 1.0m 1OMSA 10M5A 1OMSA 15.M 3.0m 30MSA 60.M5 |1.2m 60.M |1.2m 96.MA |833u -5m 100M {1.5m 100M$Aj 1.5m 150M8 |625u 180M |1.2m 180M | 1.5m 180M8 |1.5m 200M |1.2m 200M5A/ 1.2m am 46 D.A.T.A. P SA GA 300nd 100n 100n 1.0ud 1.0ugd 100n 1000 1.0ud 1.0ud 5 ond Oud 100u Olu 01 1 100nD 29n IN ORDER OF 10%|5.0m 1.5 |600u 1.08 | 1 2.0 |1.0m 6.0 ta 6.0 tA 20 THA 75 tA 601A |4.0ub [100 10 tA 50 A 7.0 A 30 ta 20 tA 20 A ra 10m@ 100) 1 500ug 5. 2. 5.00 |2.0mh 6: 1. 6. 1.0md SYMBOLS AND CODES EXPLAINED IN INTERPRETER MAX COLLECTOR DISSIPATION Cob |STRUC/Y200 TURE | s/a T0200 u ut? u ul7 TO1 TO1 EO AD DE TO18 |AD TO18 |AD X16 T01 TO1 TO1 TO1 TO1 TO1 TO1 TO1 46