BC856 ... BC860 BC856 ... BC860 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage PNP PNP Version 2011-11-07 Power dissipation - Verlustleistung 1.1 2.9 0.1 0.4 Plastic case Kunststoffgehause 1 1.30.1 2.5 max 3 Type Code 250 mW 2 1.9 Dimensions - Mae [mm] 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) BC856 BC857 BC860 BC858 BC859 Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open - VCEO 65 V 45 V 30 V Collector-Base-voltage - Kollektor-Basis-Spannung E open - VCBO 80 V 50 V 30 V Emitter-Base-voltage - Emitter-Basis-Spannung C open - VEBO 5V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (dc) - IC 100 mA Peak Collector current - Kollektor-Spitzenstrom - ICM 200 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. DC current gain - Kollektor-Basis-Stromverhaltnis - VCE = 5 V, - IC = 10 A Group A Group B Group C HFE hFE hFE - - - 90 150 270 - - - - VCE = 5 V, - IC = 2 mA Group A Group B Group C HFE hFE hFE 125 220 420 180 290 520 250 475 800 - VCEsat - VCEsat - - - - 300 mV 650 mV - VBEsat - VBEsat - - 700 mV 900 mV - - Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 BC856 ... BC860 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. - VBE - VBE 600 mV - - - 750 mV 720 mV - ICBO - ICBO - - - - 15 nA 4 A - IEBO - - 100 nA fT 100 MHz - - CCBO - - 4.5 pF CEB0 - 9 pF - F F - - 2 dB 1.2 dB 10 dB 4 dB Base-Emitter-voltage - Basis-Emitter-Spannung 2) - VCE = 5 V, IC = - 2 mA - VCE = 5 V, IC = - 10 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCE = 30 V, Tj = 125C, (E open) Emitter-Base cutoff current - VEB = 5 V, (C open) Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 200 A RG = 2 k, f = 1 kHz, f = 200 Hz BC856 ... BC858 BC859 ... BC860 Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking of available current gain groups Stempelung der lieferbaren Stromverstarkungsgruppen 2 1 2 < 420 K/W 1) BC846 ... BC850 BC856A = 3A BC856B = 3B BC856C = 3C BC857A = 3E BC857B = 3F BC857C = 3G BC858A = 3E BC858B = 3F BC858C = 3G BC860B = 3F BC860C = 3G or 4G BC859B = 3F BC859C = 3G or 4C Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG