ol de W3a7s0a1 9017530 oO y 3875081 G E SOLID STATE ~~ O1E 17830 0 33-7" Pro Electron Power Transistors Fite Number 671 BD241, BD241A, BD241B, BD241C Epitaxial-Base Silicon N-P-N VERSAWATT Transistors For Power-Amplifier and High-Speed-Switching Applications Features: 40 W at 25C case temperature = 5-A rated collector current = Min. fy of 3 MHz at 10 V, 500 mA Complements of p-n-p types 8D242, BD242A, BD2428, and BD242C a TERMINAL DESIGNATIONS Types BD241, BD241A, BD241B, and BD241C are epitaxial- base silicon n-p-n transistors; they differ only in their voltage E ratings. These devices are intended for a wide variety of c switching and amplifier applications such as series and shunt (FLANGE) | O oO a i regulators, and driver and output stages of high-fidelity amplifiers. The BD241-series power transistors are complements a an of the devices in the BD242 series. (The BD242-series devices TOP VIEW 8 are described in File No. 672.) s2cs-39969 All types utilize the JEDEC TO-220AB (VERSAWATT) plas- JEDEC TO-220AB tic package. MAXIMUM RATINGS, Absolute-Maximum Values: BD241 BD241A BD241B BD241C COLLECTOR-TO-EMITTER VOLTAGE: With external base-to-emitter resistance (Rap) =100Q2.......... VcCER 55 70 90 115 Vv With base open ...............04. VcEO 45 60 80 100 V EMITTER-TO-BASE VOLTAGE....... VeBO 5 5 5 5 Vv CONTINUOUS COLLECTOR CURRENT Ic 5 5 5 5 A CONTINUOUS BASE CURRENT...... tp 1 1 1 1 A TRANSISTOR DISSIPATION: Pr At case temperatures up to 25C .... 40 40 40 . 40 Ww At ambient temperatures up to 25C . 2 2 2 2 WwW At case temperatures above 25C .... __~_ See Fig. 2 -_-_---_-_> TEMPERATURE RANGE: Storage & Operating (Junctian)...... _--_____ -65 to 150 _____ LEAD TEMPERATURE (During Soldering): At distance 1/8 in, (3.17 mm) from case for 105 max. ..... eee eee eee 235 C 535 O1 DE 3875081) 0017531 i 3875081 GE SOLID STATE ~ ~ i Pro Electron Power Transistors Ore 175314 D T 38 'BD241, BD241A, BD241B, BD241C ELECTRICAL CHARACTERISTICS at Case Temperature (Tc) = 25C TEST CONDITIONS LIMITS . CHARACTERISTIC SYMBOL vourace connent BD241 BD241A BD241B sp2z4ic_ | UNITS Voel Yee! Ic | fg | MIN. | MAX. | MIN.) MAX.) MIN, | MAX. | MIN. | MAX. Collector Cutoff Current: \ 30 0 - 0.3 - 6.3 ~ - - - With base open ceo 6a 0 - - - - - 0.3 - 0.3 mA With base-to-emitter 45 0 - 0.2 - _ - - - - junction short-circuited I 60 0 - _ - 0.2 - > _ ces so] 0 - - - ~ - 02] - 100 oO = - - - = - - 0.2 Emitter Cutoff Current lego 5' 0 - 1 - 1 - 1 - 1 mA Collector-to-Emitter Breakdown Vattage: VeRICEO) 0.037] 0 45 - 60 - 80 = 100 ~ Vv With base open OC Forward-Current h Transfer Ratio FE 4 # 10 - 10 - 10 - 10 _ Base-to-Emitter Voltage Vee 4 3 - 18 - 18 - 18 - 18 Vv Collector-to-Emitier Saturation Voltage & : : Vg lsat) # Joe] 12 | - 12] - ae w2pov Common-E mitter Small-Signal Short- Circust: Forward- Current Transfer Ratio (f = LkHz) Magnitude of Common Emuter Smalt-Signa! Short-Circurt Forward- Current Transter Ratio [f= 1 MHz) {Fel to 0.5 3 - 3 - 3 - 3 - Thermal Resistance: Junction-to-Case Rac = 3.126 - 3.125, - 3.125, - 3.125 Juncuon-to-Ambient Raga - 62.5 - 62.5 - 62.5 - 62.5 Cow @Pulsed: Pulse duratton = 300 ys, duty factor = 2%, 536 3875081 G E SOLID STATE < 5 v o Zz wu 5 w J 3 o OC FORWARD-CURRENT TRANSFER RATIO (hee! ov de @ 3875081 0017532 4 TU O1E 1753 OT- BR-]] Pro Electron Power Transistors BD241, BD241A, BD241B, BD241C CASE TEMPERATURE e286 Ems toms oc OISSIPATION=LIMITED Voeo MAX. 48 v (80241) Voeg MAX. + GOV (B024iA} Yoeg MAX. @O {80241B) Vceo MAX, 100 (8D24IC) a 2 4 es e 4 ee 0 100 1000 COLLECTOR -TO-EMITTER VOLTAGE (VcEI-V goes ozs Fig. 1 Maximum safe operating areas for alf types. CURRENT DERATING AT CONSTANT VOLTAGE APPLIES ONLY TO THE DISSIPATION-UMITED MAXIMUM -OPERATING-AREA CURVES (FIG. 00. ROT DERATE THE SPECIFIEO VALUE FOR I MAX, 28 so 7S oo) 125 178 = 200 CASE TEMPERATURE ITc}-*C 9208-19665 Fig, 2 Derating curves for all types. ~TO-EMITTER VOLTAGE (Vce}) $ oo ol 1 lo COLLECTOR CURRENT (IlA 92$-2000 Fig. 3 Typical de beta characteristics for all types. 1075 537