2SK2267
2009-12-09
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2267
Chopper Regulator, DCDC Converter and Motor Drive
Applications
z 4-V gate drive
z Low drainsource ON-resistance : RDS (ON) = 8 m (typ.)
z High forward transfer admittance : |Yfs| = 60 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V)
z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drainsource voltage VDSS 60 V
Draingate voltage (RGS = 20 k) VDGR 60 V
Gatesource voltage VGSS ±20 V
DC (Note 1) ID 60 A
Drain current
Pulse (Note 1) IDP 240 A
Drain power dissipation (Tc = 25°C) PD 150 W
Single pulse avalanche energy
(Note 2)
EAS 1054 mJ
Avalanche current IAR 60 A
Repetitive avalanche energy (Note 3) EAR 15 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg 55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (chc) 0.833 °C / W
Thermal resistance, channel to ambient Rth (cha) 35.7 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 398 μH, RG = 25 , IAR = 60 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-21F1B
Weight: 9.75 g (typ.)
2SK2267
2009-12-09
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 V ±10 μA
Drain cutoff current IDSS V
DS = 60 V, VGS = 0 V 100 μA
Drainsource breakdown voltage V (BR) DSS I
D = 10 mA, VGS = 0 V 60 V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 2.0 V
VGS = 4 V, ID = 30 A 12 15
Drainsource ON-resistance RDS (ON)
VGS = 10 V, ID = 30 A 8 11
m
Forward transfer admittance |Yfs| VDS = 10 V, ID = 30 A 40 60 S
Input capacitance Ciss5500
Reverse transfer capacitance Crss920
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
— 2600 —
pF
Rise time tr30
Turnon time ton60
Fall time tf65
Switching time
Turn–off time toff — 220 —
ns
Total gate charge (Gate–source
plus gate–drain) Qg170
Gate–source charge Qgs110
Gate–drain (“miller”) charge Qgd
VDD 48 V, VGS = 10 V, ID = 60 A
— 60 —
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
IDR60 A
Pulse drain reverse current
(Note 1)
IDRP240 A
Forward voltage (diode) VDSF I
DR = 60 A, VGS = 0 V 1.7 V
Reverse recovery time trr150 ns
Reverse recovered charge Qrr
IDR = 60 A, VGS = 0 V
dIDR / dt = 50 A / μs — 0.3 — μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2SK2267
TOSHIBA
JAPAN
Lot No.
Note 4
Part No. (or abbreviation code)
2SK2267
2009-12-09
3
2SK2267
2009-12-09
4
2SK2267
2009-12-09
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=
DD
V
VDSS
B
VDSS
B
IL
2
1
AS
E2
RG = 25
V
DD = 25 V, L = 398 μH
2SK2267
2009-12-09
6
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