BC847BS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package SOT-363 Mechanical Data A Case: SOT-363, Molded Plastic Case material - UL Flammability Rating Classification 94V - 0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K1F (See Page 2) Weight: 0.006 grams Ordering & Date Code Information: See Page 2 C2 B1 E1 B C E2 B2 C1 G H K M J D F L Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 8 All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5.0 V IC 100 mA Peak Collector Current ICM 200 mA Peak Base Current IBM 200 mA Power Dissipation (Note 1) Pd 200 mW RJA 500 C/W Tj, TSTG -55 to +125 C Collector Current Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on ourwebsite at http://www.diodes.com/datasheets/ap02001.pdf. DS30222 Rev. 3 - 2 1 of 3 BC847BS Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit hFE 200 -- 450 -- VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage (Note 2) VCE(SAT) -- -- -- 100 400 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage (Note 2) IC = 10mA, IB = 0.5mA DC Current Gain (Note 2) Test Condition VBE(SAT) -- 755 -- mV Base-Emitter Voltage (Note 2) VBE 580 665 700 mV VCE = 5.0V, IC = 2.0mA Collector Cutoff Current (Note 2) ICBO ICBO -- -- -- 15 5.0 nA A VCB = 30V, IE = 0 VCB = 30V, Tj = 125C Emitter Cutoff Current (Note 2) IEBO -- -- 100 nA VEB = 5.0V, IC = 0 fT 100 -- -- MHz Collector-Base Capacitance CCBO -- -- 1.5 pF VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz Emitter-Base Capacitance CEBO -- 11 -- pF VEB = 0.5V, f = 1.0MHz Gain Bandwidth Product Ordering Information (Note 3) Device Packaging Shipping BC847BS-7 SOT-363 3000/Tape & Reel Notes: 2. Short duration pulse test used to minimize self-heating effect. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K1F K1F = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM YM K1F Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 Code J K L M N P R Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30222 Rev. 3 - 2 2 of 3 BC847BS 1000 250 VCE = 5V 100C hFE, DC CURRENT GAIN Pd, POWER DISSIPATION (mW) (see Note 1) 200 150 100 TA = 25C 100 -50C 10 50 1 0 0 100 200 0.01 TA, AMBIENT TEMPERATURE (C) Fig. 1, Power Derating Curve fT, GAIN BANDWIDTH PRODUCT (MHz) VCE, COLLECTOR SATURATION VOLTAGE (V) 1000 IC / IB = 20 0.4 0.3 TA = 100C 0.1 25C -50C 0 0.1 1.0 10 100 TA = 25C VCE = 10V 5V 2V 100 10 10 0.1 100 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Saturation Voltage vs Collector Current Notes: 1.0 IC, COLLECTOR CURRENT (mA) Fig. 2, DC Current Gain vs Collector Current 0.5 0.2 0.1 1. Device mounted on FR4 printed circuit board. DS30222 Rev. 3 - 2 3 of 3 BC847BS