DS30222 Rev. 3 - 2 1 of 3 BC847BS
BC847BS
DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC100 mA
Peak Collector Current ICM 200 mA
Peak Base Current IBM 200 mA
Power Dissipation (Note 1) Pd200 mW
Thermal Resistance, Junction to Ambient (Note 1) RJA 500 °C/W
Operating and Storage Temperature Range Tj,T
STG -55 to +125 °C
Ideally Suited for Automatic Insertion
For Switching and AF Amplifier Applications
Ultra-Small Surface Mount Package
Case: SOT-363, Molded Plastic
Case material - UL Flammability Rating
Classification 94V - 0
Moisture sensitivity: Level 1 perJ-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K1F (See Page 2)
Weight: 0.006 grams
Ordering & Date Code Information: See Page 2
Mechanical Data A
M
JL
D
BC
H
K
G
F
C2B1E1
E2B2C1
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on ourwebsite at http://www.diodes.com/datasheets/ap02001.pdf.
SOT-363
Dim Min Max
A0.10 0.30
B1.15 1.35
C2.00 2.20
D0.65 Nominal
F0.30 0.40
H1.80 2.20
J0.10
K0.90 1.00
L0.25 0.40
M0.10 0.25
a°8
All Dimensions in mm
DS30222 Rev. 3 - 2 2 of 3 BC847BS
Electrical Characteristics @ TA= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
DC Current Gain (Note 2) hFE 200 — 450 — VCE = 5.0V, IC= 2.0mA
Collector-Emitter Saturation Voltage (Note 2) VCE(SAT) ——
—
100
400 mV IC= 10mA, IB= 0.5mA
IC= 100mA, IB= 5.0mA
Base-Emitter Saturation Voltage (Note 2) VBE(SAT) — 755 — mV IC= 10mA, IB= 0.5mA
Base-Emitter Voltage (Note 2) VBE 580 665 700 mV VCE = 5.0V, IC= 2.0mA
Collector Cutoff Current (Note 2) ICBO
ICBO ——
—
15
5.0
nA
µA
VCB = 30V, IE= 0
VCB = 30V, Tj= 125°C
Emitter Cutoff Current (Note 2) IEBO — — 100 nA VEB = 5.0V, IC= 0
Gain Bandwidth Product fT100 — — MHz VCE = 5.0V, IC= 10mA,
f = 100MHz
Collector-Base Capacitance CCBO —— 1.5 pF
VCB = 10V, f = 1.0MHz
Emitter-Base Capacitance CEBO —11 — pF
VEB = 0.5V, f = 1.0MHz
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Year 1998 1999 2000 2001 2002 2003 2004
Code JKLM N PR
Date Code Key
K1F = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K1F
K1F
YM
YM
Marking Information
Notes: 2. Short duration pulse test used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device Packaging Shipping
BC847BS-7 SOT-363 3000/Tape & Reel
Ordering Information (Note 3)
DS30222 Rev. 3 - 2 3 of 3 BC847BS
1
10
100
1000
1.0 10 1000.10.01
h DC CURRENT GAIN
FE,
I , COLLECTOR CURRENT (mA)
Fi
g
. 2, DC Current Gain vs Collector Current
C
V=5V
CE
100 C°
T = 25 C
A°
-50 C°
0
0.1
0.2
0.3
0.4
0
.5
0.1 1.0 10 100
V , COLLECTOR SATURATION VOLTAGE (V)
CE
I , COLLECTOR CURRENT (mA)
Fi
g
. 3, Collector Saturation Volta
g
e vs Collector Current
C
I/I=20
CB
T = 100 C
A°
25 C°
-50 C°10
100
1000
0.1 1.0 10 100
f , GAIN BANDWIDTH PRODUCT (MHz)
T
I , COLLECTOR CURRENT (mA)
Fi
g
. 4, Gain Bandwidth Product vs Collector Current
C
T = 25 C
A°
V = 10V
CE
5V 2V
0
50
100
150
200
2
5
0
0 100 200
P , POWER DISSIPATION (mW)
d
T , AMBIENT TEMPERATURE ( C)
Fi
g
. 1, Power Deratin
g
Curve
A°
(see Note 1)
Notes: 1. Device mounted on FR4 printed circuit board.
