MICROWAVE POWER GaAs FET TIM1314-15UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 30.0dBm Single Carrier Level HIGH POWER P1dB=42.0dBm at 13.75GHz to 14.5GHz HIGH GAIN G1dB=7.0 dB at 13.75 GHz to 14.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current SYMBOL P1dB CONDITIONS UNIT dBm MIN. 41.0 G1dB VDS= 10V IDSset 4.0A f= 13.75 to 14.5GHz dB 6.0 7.0 A dB % dBc -42 4.0 32 -45 5.0 0.8 IDS2 (Single Carrier Level) A 4.0 5.0 Channel Temperature Rise Tch (VDS X IDS + Pin - P1dB) X Rth(c-c) C 80 UNIT mS MIN. MAX. TYP. 4000 V -0.5 -2.0 -4.5 A 8.0 V -5 C/W 2.0 2.5 IDS1 G add IM3 Two-Tone Test Po=30.0 dBm TYP. MAX. 42.0 Recommended gate resistance(Rg) : Rg= 100 (MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS= 0V IGS= -145A Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL ( Ta= 25C ) gm VGSoff The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. April, 2009 TIM1314-15UL ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 11.4 Total Power Dissipation (Tc= 25 C) PT W 60 Channel Temperature Tch C 175 Storage Temperature Tstg C -65 to +175 PACKAGE OUTLINE (2-11C1B) Unit in mm c Gate d Source e Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM1314-15UL RF PERFORMANCE Pout(dBm) Output Power (Pout) vs. Frequency VDS=10V IDS4.0A 44 Pin=35.0 dBm 43 42 41 40 13.75 14.1 14.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 44 freq.=14.5GHz 43 VDS=10V 50 IDS4.0A Pout Pout(dBm) 41 40 40 39 30 38 add 37 20 36 35 10 28 30 32 34 Pin(dBm) 3 36 38 add(%) 42 TIM1314-15UL Power Dissipation(PT) vs. Case Temperature(Tc) PT(W) 60 30 0 0 40 80 120 160 200 Tc( C ) IM3 vs. Output Power Characteristics -10 VDS=10V -20 freq.=14.5GHz f=5MHz IM3(dBc) -30 -40 -50 -60 24 26 28 30 Pout(dBm) @Single carrier level 4 32 34