File Number 1999 Avalanche Energy Rated N-Channel Power MOSFETs 8.0A and 9.0A, 150V-200V fos(on) = 0.4Q and 0.60 Features: Single pulse avalanche energy rated Hf SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance The IRF230R, IRF231R, IRF232R and IRF233R are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel en- hancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-204AA steel package. Absolute Maximum Ratings Rugged Power MOSFETs IRF230R, IRF231R, IRF232R, IRF233R N-CHANNEL ENHANCEMENT MODE O $s 92C$- 42658 TERMINAL DIAGRAM TERMINAL DESIGNATION DRAIN SOURCE (FLANGE) @ 68% 6 GATE 92C8-37801 JEDEC TO - 204AA Parameter IRF230R IRF231R IRF232R IRF233R Units Vos Drain - Source Voltage 200 150 200 150 V Voga Drain - Gate Voltage (Res = 20 KN) 200 150 200 150 v Ip @ Te = 25C Continuous Drain Current 9.0 9.0 8.0 8.0 A lo @ Te = 100C Continuous Drain Current 6.0 6.0 5.0 5.0 A low Pulsed Drain Current @ 36 36 32 32 A. Vas Gate - Source Voltage +20 Vv Po @ Te = 25C Max. Power Dissipation 75 (See Fig. 14) Ww Linear Derating Factor 0.6 (See Fig. 14) w/C Eas Single Pulse Avalanche Energy Rating @ 150 mj h Sporting Junction ord gs 5 0160 c Lead Temperature 300 (0.063 in. (1.6mm) trom case for 10s) cRugged Power MOSFETs IRF230R, IRF231R, IRF232R, IRF233R Electrical Characteristics @ T; = 25C (Unless Otherwise Specified) Par t Type Min. | Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage IRF230R _ _ = IRF232R 200 Vv Vas = OV IRF231R = IRF233R | 190 - - Vv lp = 250nA Vasim Gate Threshold Voltage ALL 2.0 = 4.0 Vv Vos = Vas, lo = 2504 A loss Gate-Source Leakage Forward ALL _ _ 100 nA Vas = 20V Ioss Gate-Source Leakage Reverse ALL _ -100 nA Vas = -20V loss Zero Gate Voltage Drain Current - 250 pA Vos = Max. Rating, Ves = OV ALL =~ T4000 [vA | Vos = Max. Rating x 0.8, Ves = OV, Te = 125C loom On-State Drain Current @ IRF230R | go _ _ A ee Vos > lotom X Rosion) max, Vas = 10V inF2a3R| &9 | ~ | A Rosion Static Drain-Source On-State IRF230R;} __ 0.25 04 2 Resistance @ mere Ves = 10V, Ip = 5.0A IRF233R | 0.4 06 Q Qts Forward Transconductance ALL 3.0 4.8 = S(u)_| Vos > loion X Rosionimax, |p = 5.0A Cis Input Capacitance ALL = 600 _ pF Ves = OV, Vos = 25V, f = 1.0 MHz Coss Output Capacitance ALL _ 250 = pF See Fig. 10 Cros Reverse Transfer Capacitance ALL _ 80 _ pF : baton Turn-On Delay Time ALL =_ ~ 30 ns Von = 90V, lo = 5.0A, Zo = 15 te Rise Time ALL = _ 50 ns See Fig. 17 turn - Turn-Off Delay Time ALL = - 50 ns (MOSFET switching times are essentially tr Fail Time ALL _ _ 40 ns independent of operating temperature.) Q, Total Gate Charge ALL _ 19 30 nc Ves = 10V, lp = 12A, Vos = 0.8V Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Qes Gate-Source Charge ALL _ 10 _ nc essentially independent of operating a RA et temperature.) Qya Gate-Drain ("Miller") Charge ALL = 9.0 = ac bo Internal Drain Inductance ALL _ 5.0 _ nH Measured between Modified MOSFET the contact screw on symbol showing the header that is closer to | internal device , source and gate pins inductances and center of die. uo Ls internal Source Inductance ALL _ 12.5 _ nH Measured from the source pin, 6 mm G Ls (0.25 in.) from header and source $ bonding pad. sacs azeey Thermal Resistance RinJC _Junction-to-Case ALL _ = 1,67_ | C/W RinCS Case-to-Sink ALL 0.1 _ C/W _| Mounting surface flat, smooth, and greased. RinJA Junction-to-Ambient ALL = = 30 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF230R{ __ _ 90 A Modified MOSFET symbol (Body Diode) IRF231R : showing the integral 5 IRF232R 8.0 A reverse P-N junction rectifier. IRF233R] ~~ tsm Pulse Source Current IRF230R;} __ _ 36 A 6 (Body Diode) @ IRF231R IRF232R sr azese iRF233R| ~ | ~ | A Vsp Diode Forward Voltage @ IRF230R} _ = oR = = IRF231R 2.0 v Te = 25C, Is = 9.0A, Vas = OV IRF232R = = = IRF233R | _ 1.8 Vv Te = 25C, Is = 8.0A, Vas = OV te Reverse Recovery Time ALL 450 _ ns Ts = 150C, Ir = 9.0A, dir/dt = 100A/us Qar Reverse Recovered Charge ALL _ 3.0 = uc Ty = 150C, Ir = 9.0A, die/dt = 100A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. @ T, = 25C to 150C. @ Pulse Test: Pulse width < 300us, Duty Cycle = 2%. @ Repetitive Rating: Pulse width timited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Von = 20V, starting T, = 25C, L = 3.37MH, Ros = 50, Ipeax = 9A. See figures 15, 16.Rugged Power MOSFETs 90 us PULSE ip, ORAIN CURRENT (AMPERES) 0 2 a 60 60 Vos, DRAIN-TO-SQURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics IRF230R, IRF231R, IRF232R, IRF233R WO ys PULSE 5 ' Vos > 'a(on} * 8ps(on) max. tp, DRAIN CURRENT (AMPERES) 0 1 2 3 4 5 6 7 Vs, GATE TO-SOURCE VOLTAGE (VOLTS) Fig. 2 Typical Transfer Characteristics 100 AREA IS LIMITED 20 @ : = = 10 LIRF230R, 2 2 = IRF232R, 3R < = = 3 = 3 5 = = 5 z 3 z 2 Zz 10 z S & s Tc = 25C 3 951 1, = 190C MAX Finuc - 1} 67C/Ww oc 02 [-_ SINGLE PuLsE IRFZ30R, a1 o 1 2 3 4 5 Vos. ORAIN-TO-SOURCE VOLTAGE iVOLTS} Fig. 3 Typical Saturation Characteristics o wn n THERMAL IMPEDANCE (PER UNIT} SINGLE THERMAL IMPEDANCE) ZrracitV Aye, NOAMALIZED EFFECTIVE TRANSIENT 142 5 wd 2 5 92 10 2 5 10 20 50 100 200 Vos. DAAIN-TO-SQURCE VOLTAGE (VOLTS) Fig. 4 Maximum Safe Operating Area a 1 DUTY FACTOR, 0 z 2 PEA UNIT BASE = Aynyc 167 OEG CW 3 Ty - To = Pom Zinsc let 2 5 wt 2 5 10 2 5 ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal tmpedance, Junction-to-Case Vs. Pulse DurationRugged Power MOSFETs IRF230R, IRF231R, IRF232R, IRF233R S R wm Ty= 1800C ~ 5 ET) = 150C Sts. TRANSCONOUCTANCE (SIEMENS) jpn. REVERSE DRAIN CURRENT (AMPERES) Vos > 'p(on} * 2 Ty = 25C 10 0 2 4 6 8 0 0 1 2 3 4 1p, DRAIN CURRENT (AMPERES) Vgp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage o - oo Rostan). ORAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2 an BVpss, GRAIN TO-SOUACE BREAKDOWN VOLTAGE INORMALIZED) a2 -40 0 40 80 120 160 -40 0 40 80 120 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (9C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature 70 f= 1 MHz ! t Vos = 40v Ging = Cys + Cyd, Cog SHORTED Cre * Coe Canfas SESE = Cay + Ogg i Vos 7 100v Vos = 160V, IRF230A, C, CAPACITANCE (pF) Ip = 12a _ FOR TEST CIRCUIT SEE FIGURE 18 Vgs. GATE TO SOURCE VOLTAGE (VOLTS) 0 0 20 x 0 80 0 8 16 24 32 a0 Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Oy. TOTAL GATE CHARGE (nC} Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 6-20Rugged Power MOSFETs Apsiee). DAAIN-TO-SOURCE ON RESISTANCE (OHMS) Fig. 12 Typical On-Resistance Vs. Drain Current Pp, POWER DISSIPATION (WATTS) > s eo n (g, DRAIN CURRENT (AMPERES) wy WITH oF us HNITEAL Ty 25C. (HEATING EFFECT OF 2.0 us PULSE IS MINIMAL } Q 10 20 cK) ip, DAAIN CURRENT (AMPERES) 0 a 25 o 20 4G 60 60 100 140 Te, CASE TEMPERATURE (C) 120 Fig. 14 Power Vs. Temperature Derating Curve 92C$- 42660 Fig. 16 Unclamped Energy Waveforms CURRENT REGULATOR 12v T O02 BATTERY Tf = a 50 KS? CURRENT SHUNT VARY tp TO OBTAIN REQUIRED PEAK I PRF 1 kHz IRF230R, IRF231R, IRF232R, IRF233R IRF230A, 231R 50 15 100 Tc, CASE TEMPERATURE (9C) 125 150 Fig. 13 Maximum Drain Current Vs. Case Temperature 9208-42659 ~ Fig. 15 Unclamped Energy Test Circuit Von = GOV 15.50 Vo TO SCOPE 928- 42724 Fig. 17 Switching Time Test Circuit os (ISOLATED SUPPLY} SAME TYPE AS OUT AWA O Vos (o CURRENT SHUNT Fig. 18 Gate Charge Test Circuit 6-21